Material and antireflection structure designs and methods of manufacturing are provided that produce efficient photovoltaic power conversion from single- and multi-junction devices. Materials of different energy gap are combined in the depletion region of at least one of the semiconductor junctions. Higher energy gap layers are positioned to reduce the diode dark current and enhance the operating voltage by suppressing both carrier injections across the junction and recombination rates within the junction. Step-graded antireflection structures are placed above the active region of the device in order to increase the photocurrent.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.

A bio-sensing device is provided, which includes a carrier substrate, a light source disposed on the carrier substrate, a photodiode sensor disposed on the carrier substrate and laterally spaced apart from the light source, a light-blocking wall disposed on the carrier substrate and located between the light source and the photodiode sensor, a cover glass, a dual-band filter coated on a front surface of the cover glass, a first optical adhesive formed on a back surface of the cover glass, and a second optical adhesive covering the carrier substrate, the light source, the photodiode sensor and the light-blocking wall, and being used to be bonded with the first optical adhesive. The first optical adhesive has been cured when the second optical adhesive is bonded with the first optical adhesive, and the second optical adhesive is cured by irradiation with ultraviolet light after being in contact with the first optical adhesive.

A device may include a filter array disposed on a substrate. The filter array may include a first mirror disposed on the substrate. The filter array may include a plurality of spacers disposed on the first mirror. A first spacer, of the plurality of spacers, may be associated with a first thickness. A second spacer, of the plurality of spacers, may be associated with a second thickness that is different from the first thickness. A first channel corresponding to the first spacer and a second channel corresponding to the second spacer may be associated with a separation width of less than approximately 10 micrometers (m). The filter array may include a second mirror disposed on the plurality of spacers.

An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.

Ultraviolet-light photodetector structures, and methods relating to the structure, where the structure includes a silicon-photoelectric conversion element and a UV-to-visible down conversion layer. The UV-to-visible down conversion layer has a halide-perovskite component. The halide-perovskite component has an absorption spectrum at wavelengths in the range of 400 nm or less and has an associate photoluminescence (PL) emission resulting in an emission spectrum with wavelengths in the range of above 400 nm. The UV-to-visible down conversion layer is associated with the silicon-photoelectric conversion element such that light in the absorption spectrum incident on the UV-to-visible down conversion layer results in a visible light emission which is incident on the silicon-photoelectric conversion element so as to produce an electrical signal.

Device (1) for characterizing a substance (2) capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device (1) comprising: an electroluminescent component (3), at least semi-transparent in the first spectral range, and comprising first and second opposite surfaces (30, 31), the electroluminescent component (3) being suitable for emitting an excitation radiation (Re.sub.1) outgoing from the first surface (30), emitted in a first spectral range according to a circular polarization state; the excitation radiation (Re.sub.1) outgoing from the first surface (30) being able to pass through the electroluminescent component (3), after being reflected, and exit from the second surface (31); a polarization filter (4), arranged to filter the excitation radiation (Re.sub.2) outgoing from the second surface (31), and suitable for modifying the circular polarization state so as to obtain an extinguishing of the excitation radiation (Re.sub.2) outgoing from the second surface (31) of the electroluminescent component (3); a detector (5), arranged to detect the photoluminescence radiation (Rp) outgoing from the polarization filter (4).

An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.

A method includes forming, over a first surface of a semiconductor layer, a plurality of pixels configured to absorb radiation from a second surface of the semiconductor layer, the second surface of the semiconductor layer being opposite to the first surface of the semiconductor layer, with top surfaces of the plurality of pixels extending along and coplanar with the first surface. The method also includes forming a metallization layer over the first surface of the semiconductor layer, forming a first dielectric layer over the second surface of the semiconductor layer, and forming a color filter layer over the first dielectric layer. A refractive index of the semiconductor layer is greater than a refractive index of the color filter layer, which is greater than a refractive index of the first dielectric layer.