H01L41/338

Crystal vibration element, and crystal vibrator equipped with crystal vibration element

A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.

Ultrasonic sensor, electronic device using same, and method for making same

A thin-profile ultrasonic sensor includes a piezoelectric material layer having a first surface and a second surface, a plurality of thin film transistors (TFTs) on the first surface, and an electrode layer on the second surface. The first surface and the second surface are on opposite sides facing away from each other. The piezoelectric material layer is configured as a substrate to support the plurality of TFTs, no other substrate being required. The piezoelectric material layer is configured to transmit and receive ultrasonic signals.

Crystal vibration element, and crystal vibrator equipped with crystal vibration element

A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.

Piezoelectric element manufacturing method
11081639 · 2021-08-03 · ·

The present invention provides a piezoelectric element manufacturing method. The manufacturing method is a method of manufacturing a piezoelectric element comprising a piezoelectric body composite in which a piezoelectric body configured from a Pb-based piezoelectric material and a resin are alternately arranged, and comprises a step of etching, using an etching liquid, a plurality of parallel piezoelectric body segments formed by dicing. The etching liquid comprises a liquid which contains 0.1 to 20 mass % of hexafluorosilicic acid.

Ultrasound transducer and manufacturing method thereof

An ultrasound transducer used in an ultrasound system and a method of manufacturing the same are disclosed. The ultrasound transducer is manufactured by forming a backing block including a plurality of surfaces; forming a piezoelectric layer including a first portion formed on the backing block to be in contact therewith and a second portion extending from the first portion; electrically connecting a plurality of pins to the second portion by attaching a connector having the plurality of pins for electrical connection with at least one of a transmitting unit and a receiving unit of an ultrasound system to at least one surface of the plurality of surfaces of the backing block; cutting the first portion and the second portion of the piezoelectric layer into a plurality of piezoelectric elements, wherein each of the plurality of piezoelectric elements is connected to a corresponding one of the plurality of pins of the connector; and forming a ground layer connected to the piezoelectric layer.

ULTRASONIC PROBE AND METHOD OF MANUFACTURING THE SAME

Disclosed are an ultrasonic probe and a method of manufacturing the same. The ultrasonic probe includes a piezoelectric layer including one or more kerfs such that piezoelectric elements are provided in a plurality of rows along an elevation direction, a first electrode formed on an upper side of the piezoelectric layer, a second electrode formed on a lower side of the piezoelectric layer, a matching layer disposed above the piezoelectric layer and including one or more grooves connected to the one or more kerfs, and a third electrode formed in inner surfaces of the one or more grooves and electrically connected to the first electrode.

METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT
20210187550 · 2021-06-24 ·

There is provided a method for producing a piezoelectric element, which allows for forming a columnar microstructure with a small width and a high aspect ratio. The method is intended to produce a piezoelectric element 102 including a three-dimensional structure group 20 having a plurality of the three-dimensional structures 21 and 321 formed in a plate-like or columnar shape with a width of 30 μm or less and a height of 80 μm or more. The production method includes a first process of fabricating a plurality of plate-like or columnar precursor shapes 82a on a bulk material 81 formed of a Pb-based piezoelectric material, and a second process of reducing the width of the precursor shapes 82a to a predetermined value using an etching liquid.

Crystal vibration element, and crystal vibrator equipped with crystal vibration element

A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.

Electronic devices formed in a cavity between substrates
11050407 · 2021-06-29 · ·

An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.

FIRST-STAGE CERAMIC COLLECTIVE BOARD, SECOND-STAGE CERAMIC COLLECTIVE BOARD, MANUFACTURING METHOD FOR SECOND-STAGE CERAMIC COLLECTIVE BOARD, AND MANUFACTURING METHOD FOR MULTILAYER ELECTRONIC COMPONENT
20210166883 · 2021-06-03 ·

Even with the occurrence of misalignment of inner electrodes in a ceramic collective board, a multilayer electronic component is made in which inner electrodes are disposed at suitable positions. Disclosed herein are descriptions of a first-stage ceramic collective board and a second-stage ceramic collective board used for manufacturing a multilayer electronic component. The present disclosure further describes a manufacturing method for the second-stage ceramic collective board and a manufacturing method for a multilayer electronic component.