A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

A manufacturing method for an ultrasonic fingerprint sensor is provided. The method may include: preparing a sintered ceramic element under incomplete sintering conditions; forming a processed ceramic element by cutting a first surface of the sintered ceramic element along a first direction in pre-designated intervals up to such a depth that leaves a remainder region at a second surface and cutting the second surface of the sintered ceramic element along a second direction perpendicular to the first direction in pre-designated intervals up to such a depth that leaves a remainder region at the first surface; sintering the processed ceramic element under complete sintering conditions; filling an insulation material into troughs formed in the processed ceramic element by the cutting processes; and polishing the first surface and second surface to remove the remainder regions such that piezoelectric rods are exposed while arranged in an array form.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises a front face, a back face parallel to the front face, a piezoelectric layer having a top surface electrically coupled to the signal pad and a bottom surface electrically coupled to the ground pad. In this way, the transducer can work robustly and may be automatically mounted to an imaging probe.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A method for manufacturing multilayer components, and a multilayer component are disclosed. The method includes manufacturing a body comprising electrically conductive layers and dielectric layers which are stacked one above the other, wherein the body comprises at least one cavity and at least partially filling the cavity with an insulation material using capillary forces. The method further includes after partially filling the cavity, singulating the body into at least two base bodies and applying a passivation layer to surfaces of the singulated base bodies, wherein the passivation layer comprises a material which is different from the insulation material.

There is provided a wafer making it possible to stably break off the piezoelectric vibrator element. The wafer includes a piezoelectric vibrator element, a frame part, and a connection part adapted to connect the piezoelectric vibrator element and the frame part to each other, and the connection part is provided with a guide part adapted to guide force, which is applied to the connection part from one surface side in the thickness direction of the connection part when breaking off the piezoelectric vibrator element from the frame part at the connection part, to at least one side in the width direction of the connection part.

An elastic wave device includes IDT electrodes on a first main surface of a piezoelectric substrate and a heat dissipating film on a second main surface and including a pair of opposing main surfaces and side surfaces connecting the pair of main surfaces. At least a portion of the side surfaces of the heat dissipating film is located in an inner side portion relative to the outer circumference of the second main surface of the piezoelectric substrate on an arbitrary cross section along a direction connecting the pair of main surfaces of the heat dissipating film.