A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si.sub.1-x-yM1.sub.xM2.sub.y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01x0.1.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A semiconductor manufacturing apparatus includes a vacuum chamber, a rotary member, a first magnet, a second magnet, and a magnetic body. The vacuum chamber contains a substrate and a target located opposite to the substrate. The rotary member has a first surface located on a back side of the target outside the vacuum chamber. The first magnet is provided on the first surface. The second magnet has a magnetic pole opposite to a magnetic pole of the first magnet and is provided on an inner side of the first magnet on the first surface. The magnetic body is provided between the first magnet and the second magnet and is configured to be movable backward and forward in a vertical direction.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

The present disclosure discloses a film carrier, a film application apparatus, a film application, and a film to be applied used in a display panel. The film carrier comprises: a main body part and an attraction member. The main body part has a supporting surface and is configured to be rotatable to drive the supporting surface to swing about an axial direction of the main body part. The supporting surface has a curved projection in a plane perpendicular to the axial direction. The attraction member is disposed on the main body part for attracting the film to be applied on the supporting surface.

A sintered oxide includes an In.sub.2O.sub.3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2) range defined by (A) to (F) below as measured by X-ray (CuK ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A sputtering device includes a processing chamber where a substrate is accommodated, and a slit plate that partitions the processing chamber into a first space where a target member is disposed and a second space where the substrate is disposed. The slit plate includes an inner member having an opening that penetrates therethrough in a thickness direction of the slit plate, and an outer member disposed around the inner member. The inner member is attachable to and detachable from the outer member.

The present invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate according to the present invention includes additionally providing a transparent polypropylene film on an IGZO active layer to provide an effect of blocking UV light and thus preventing UV light from affecting stability of the IGZO active layer so as to improve stability of a TFT device without increasing the number of masks used. When the manufacturing method of the TFT substrate according to the present invention is applied to production of OLED display panels, the transparent polypropylene film may serve as a planarization layer so that the existing manufacturing process of OLED display panels does not need to be modified and manufacturing costs are not increased. Further, the TFT substrate so manufactured adopts a back channel etching type IGZO-TFT structure, which, as compared to a traditional etch stop type IGZO-TFT structure, requires fewer photoengraving operations and a lower manufacturing cost. The TFT substrate according to the present invention includes a transparent polypropylene film additionally provided on an IGZO active layer to provide an effect of blocking UV light so as to improve stability of a TFT device and manufacturing cost is low.