In a mask blank comprising a transparent substrate and a single layer or multilayer film formed thereon, the film is formed only on the front surface of the substrate, but not on the side surface, chamfer, front surface-chamfer boundary, and back surface-chamfer boundary. The mask blank contains few particle defects, especially the number of particle defects with a certain size is zero.

Provided is a method of producing an epitaxial silicon wafer, which is excellent in productivity and prevents the formation of a backside haze in consecutive single-wafer processing epitaxial growth procedures on a plurality of silicon wafers without cleaning a process chamber after each epitaxial growth procedure. The method of producing an epitaxial silicon wafer includes: a step of loading a silicon wafer; a step of forming a silicon epitaxial layer; a step of unloading the silicon wafer; and a cleaning step. The cleaning step is performed before and after repeating a predetermined number of times a series of growth procedures including the silicon wafer loading step, the silicon epitaxial layer formation step, and the silicon wafer unloading step.

According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.

Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700 C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700 C. or less and injecting the silicon gas into the epitaxial chamber in the state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a second epitaxial layer, and stopping the injection of the silicon gas and injecting the purge gas into the epitaxial chamber to perform second purge inside the epitaxial chamber.

The embodiments of the present disclosure provide a bonding device for a chip on film and a display panel and a bonding method for the same. The bonding device includes: a bearing stage having a horizontal bearing surface for supporting at least one row of display panels, wherein one row of the at least one row of display panels has a row of first bonding regions; a grasping unit disposed above the bearing stage and configured to grasp at least a partial area of the entire chip on film so that a row of second bonding regions of the entire chip on film is horizontally located above the one row of display panels; and a bonding unit configured to bond the row of second bonding regions which has been aligned with the row of first bonding regions to the row of first bonding regions.

A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500? C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600? C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881?x.sup.?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

The present disclosure discloses a film carrier, a film application apparatus, a film application, and a film to be applied used in a display panel. The film carrier comprises: a main body part and an attraction member. The main body part has a supporting surface and is configured to be rotatable to drive the supporting surface to swing about an axial direction of the main body part. The supporting surface has a curved projection in a plane perpendicular to the axial direction. The attraction member is disposed on the main body part for attracting the film to be applied on the supporting surface.

In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.