There is provided a radio frequency power source device configured to change a voltage ratio between two output end voltages, by switching a connection state of a voltage divider that divides the radio frequency voltage, in such a manner that the radio frequency voltage is divided into voltage outputs in antiphase with each other with respect to ground potential, and high voltage and low voltage are delivered in switching manner. Switching of the connection state in the voltage divider enables selective delivery of voltage having different values, high voltage or low voltage, and by selecting and delivering high voltage for the time high voltage is required, reduction of the voltage output from the radio frequency output circuit is prevented.

Methods of making Ta, Nb, and Ta/Nb sputter targets and targets produced thereby. The improved targets comprise a mixed {100}/{111} texture wherein the % volume of {100} texture is increased over prior art methods and a % volume {111} texture reduced compared to targets made by prior art methods. This results in increased film deposition rates upon sputtering of the improved targets. The methods for manufacturing the improved targets comprise a clock rolling step wherein less than 8% target reduction is achieved at rolling speeds of between about 30-40 rpm.

A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si.sub.1-x-yM1.sub.xM2.sub.y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01x0.1.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

A method for preparing a ceramic package substrate with a copper-plated dam involves making a circuit layer on a ceramic base by performing thin film metallization, dry film application, exposure, development, copper plating, and evening, and then forming copper-plated dams that circle individual circuits by repeatedly applying dry film application, exposure, development, and electroplating for thickening, so as to obtain the ceramic package substrate with the copper-plated dam. Circuits made using the method feature for high dimensional precision, high line resolution, and high surface evenness.

The present invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate according to the present invention includes additionally providing a transparent polypropylene film on an IGZO active layer to provide an effect of blocking UV light and thus preventing UV light from affecting stability of the IGZO active layer so as to improve stability of a TFT device without increasing the number of masks used. When the manufacturing method of the TFT substrate according to the present invention is applied to production of OLED display panels, the transparent polypropylene film may serve as a planarization layer so that the existing manufacturing process of OLED display panels does not need to be modified and manufacturing costs are not increased. Further, the TFT substrate so manufactured adopts a back channel etching type IGZO-TFT structure, which, as compared to a traditional etch stop type IGZO-TFT structure, requires fewer photoengraving operations and a lower manufacturing cost. The TFT substrate according to the present invention includes a transparent polypropylene film additionally provided on an IGZO active layer to provide an effect of blocking UV light so as to improve stability of a TFT device and manufacturing cost is low.

A vapor deposition unit (1) includes: a vapor deposition mask (10); a limiting plate unit (20) having limiting plates (22); and a vapor deposition source (30). The vapor deposition source (30) includes: a plurality of first openings (31) for injection of vapor deposition particles; and at least one second opening (32) for pressure release, wherein each of the first openings (31) is provided in a corresponding one of limiting plate openings (23) between the limiting plates (22) in a plan view, and the at least one second opening (32) is provided in such a position as not to face the limiting plate openings (23) in a plan view.

The present disclosure provides an apparatus for loading a substrate into a vacuum processing module. The apparatus includes a Bernoulli-type holder having a surface configured to face the substrate, and a gas supply configured to direct a stream of gas between the surface and the substrate, wherein the Bernoulli-type holder is configured to provide a pressure between the substrate and the surface configured for levitation of the substrate. The substrate is a large area substrate.

A semiconductor manufacturing apparatus includes a vacuum chamber, a rotary member, a first magnet, a second magnet, and a magnetic body. The vacuum chamber contains a substrate and a target located opposite to the substrate. The rotary member has a first surface located on a back side of the target outside the vacuum chamber. The first magnet is provided on the first surface. The second magnet has a magnetic pole opposite to a magnetic pole of the first magnet and is provided on an inner side of the first magnet on the first surface. The magnetic body is provided between the first magnet and the second magnet and is configured to be movable backward and forward in a vertical direction.

A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.