Patent classifications
H10H29/30
DEVICE FOR MANUFACTURING DISPLAY PANEL
A device for manufacturing a display panel includes a support portion on which a display substrate is mounted. The device includes a mask defining an opening corresponding to a transmission area of the laser beam, and a pressing portion including a pressing member configured to press against the mask. The device includes a laser irradiation portion disposed in a front surface of the support portion and configured to irradiate the display substrate with laser light through the mask. The mask includes a base layer configured to transmit laser light, and a light blocking pattern layer disposed on the base layer and including the opening.
DEVICE FOR MANUFACTURING DISPLAY PANEL
A device for manufacturing a display panel includes a support portion on which a display substrate is mounted. The device includes a light transmitting plate disposed on a front surface of the support portion, a reflective member disposed within the light transmitting plate, and a light absorbing member configured to absorb laser light reflected by the reflective member. The device includes a pressing portion configured to move the light transmitting plate toward the display substrate in association with pressing a plurality of light emitting elements arranged on the display substrate with the light transmitting plate. The device includes a laser emission portion disposed on a front side of the light transmitting plate and configured to irradiate the display substrate with laser light through the light transmitting plate.
BIOMETRIC SENSOR COMPRISING OXIDE SEMICONDUCTOR, BIOMETRIC SENSOR ON DISPLAY, AND METHODS OF MAKING AND USING THE SAME
A sensor, a device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a micro heater and a micro temperature sensor for at least active thermal sensing, which may comprise an oxide semiconductor material. The micro heater and the micro temperature sensor may be separate or combined in one pixel. The present disclosure also provides an out-cell type or an in-cell type of biometric sensor on display device, for example, an out-cell type or an in-cell type fingerprint sensor on display (FoD) device. The pixels for active thermal sensing include an oxide semiconductor material. The methods of making and the methods of using the sensors, the devices, or the system are also provided.
BIOMETRIC SENSOR COMPRISING OXIDE SEMICONDUCTOR, BIOMETRIC SENSOR ON DISPLAY, AND METHODS OF MAKING AND USING THE SAME
A sensor, a device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a micro heater and a micro temperature sensor for at least active thermal sensing, which may comprise an oxide semiconductor material. The micro heater and the micro temperature sensor may be separate or combined in one pixel. The present disclosure also provides an out-cell type or an in-cell type of biometric sensor on display device, for example, an out-cell type or an in-cell type fingerprint sensor on display (FoD) device. The pixels for active thermal sensing include an oxide semiconductor material. The methods of making and the methods of using the sensors, the devices, or the system are also provided.
BIOMETRIC SENSOR COMPRISING OXIDE SEMICONDUCTOR, BIOMETRIC SENSOR ON DISPLAY, AND METHODS OF MAKING AND USING THE SAME
A sensor, a device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a micro heater and a micro temperature sensor for at least active thermal sensing, which may comprise an oxide semiconductor material. The micro heater and the micro temperature sensor may be separate or combined in one pixel. The present disclosure also provides an out-cell type or an in-cell type of biometric sensor on display device, for example, an out-cell type or an in-cell type fingerprint sensor on display (FoD) device. The pixels for active thermal sensing include an oxide semiconductor material. The methods of making and the methods of using the sensors, the devices, or the system are also provided.
Biometric sensor comprising oxide semiconductor, biometric sensor on display, and methods of making and using the same
A sensor, a device, a system, and a method, for biometric sensing, are provided. Such a device or system includes a micro heater and a micro temperature sensor for at least active thermal sensing, which may comprise an oxide semiconductor material. The micro heater and the micro temperature sensor may be separate or combined in one pixel. The present disclosure also provides an out-cell type or an in-cell type of biometric sensor on display device, for example, an out-cell type or an in-cell type fingerprint sensor on display (FoD) device. The pixels for active thermal sensing include an oxide semiconductor material. The methods of making and the methods of using the sensors, the devices, or the system are also provided.
DISPLAY DEVICE
A display device includes a bank layer disposed on a substrate and defining a light-emitting area and a sub-area, a first electrode and a second electrode spaced apart from each other and extending from the light-emitting area to the sub-area, a plurality of light-emitting elements disposed on the first electrode and the second electrode in the light-emitting area, a plurality of dummy light-emitting elements disposed on the first electrode and the second electrode in the sub-area, a first connection electrode in electrical contact with an end of each of the plurality of light-emitting elements, and a second connection electrode in electrical contact with another end of each of the plurality of light-emitting elements. The sub-area includes an isolation area in which each of the first electrode and the second electrode is disconnected, and the plurality of dummy light-emitting elements are not disposed in the isolation area.
DISPLAY DEVICE
A display device includes a bank layer disposed on a substrate and defining a light-emitting area and a sub-area, a first electrode and a second electrode spaced apart from each other and extending from the light-emitting area to the sub-area, a plurality of light-emitting elements disposed on the first electrode and the second electrode in the light-emitting area, a plurality of dummy light-emitting elements disposed on the first electrode and the second electrode in the sub-area, a first connection electrode in electrical contact with an end of each of the plurality of light-emitting elements, and a second connection electrode in electrical contact with another end of each of the plurality of light-emitting elements. The sub-area includes an isolation area in which each of the first electrode and the second electrode is disconnected, and the plurality of dummy light-emitting elements are not disposed in the isolation area.
EPITAXIAL DIE AND CHIP DIE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREOF
The present invention relates to an epitaxial die and a chip die for a semiconductor light-emitting device, and a manufacturing method thereof, wherein only one of two electrodes is exposed to the outside, and a process of forming a positive ohmic contact electrode (p-ohmic contact electrode) or a negative ohmic contact electrode (n-ohmic contact electrode) is completed in an epitaxial die manufacturing step so as to achieve dramatic thickness reduction and easy reduction of the chip die size, thereby improving the light output.
LIGHT EMITTING DIODE, DISPLAY DEVICE INCLUDING LIGHT EMITTING DIODE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE
Disclosed is a light emitting diode which includes a first electrode layer including a reflective material, a semiconductor layer disposed on the first electrode layer and including a plurality of light emitting members spaced apart from each other, a second electrode layer including a plurality of sub-electrodes disposed on the plurality of light emitting members, respectively, and a protective layer covering the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a base semiconductor layer disposed on the first electrode layer and a plurality of sub-semiconductor layers protruding from the base semiconductor layer, a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively, and a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively. The plurality of sub-electrodes are disposed on the plurality of second semiconductor layers, respectively.