Patent classifications
H10H29/30
ELECTRONIC DEVICE
An electronic device includes a display panel and an electronic module. The display panel includes a first region and a second region, and the first region includes a first sub-region and a second sub-region having light transmittance lower than light transmittance of the first sub-region. The electronic module is under the display panel corresponding to the first region, The display panel includes first light emitting elements in the first sub-region, first pixel circuits connected to the first light emitting elements, and located in the second sub-region, second light emitting elements in the second sub-region, second pixel circuits connected to the second light emitting elements, and located in the second sub-region, and connecting lines connecting first light emitting elements and first pixel circuits.
LED and method of manufacture
A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.
Adaptive illumination for LED arrays
A structure and method of operating micro-LEDs are described. The micro-LEDs are arranged in a micro-LED array and have random orientations, distributions, and positions within the array. A lens array includes micro-lenses configured to capture light from the micro-LEDs. The micro-LED array structure is calibrated by capturing light from each of the micro-LEDs at different times and determining characteristics of the light from each of the micro-LEDs. Once image data of an image to be generated by the micro-LED array is received, a combination of the micro-LEDs to activate to produce the image, as well as the characteristics for driving the individual micro-LEDs is determined. The micro-LEDs are then activated to produce the image.
Adaptive illumination for LED arrays
A structure and method of operating micro-LEDs are described. The micro-LEDs are arranged in a micro-LED array and have random orientations, distributions, and positions within the array. A lens array includes micro-lenses configured to capture light from the micro-LEDs. The micro-LED array structure is calibrated by capturing light from each of the micro-LEDs at different times and determining characteristics of the light from each of the micro-LEDs. Once image data of an image to be generated by the micro-LED array is received, a combination of the micro-LEDs to activate to produce the image, as well as the characteristics for driving the individual micro-LEDs is determined. The micro-LEDs are then activated to produce the image.
MASK MEMBER, LIGHT EMITTING ELEMENT TRANSFER DEVICE, AND METHOD OF TRANSFERRING THE LIGHT EMITTING ELEMENT
A mask member, a light emitting element transfer device, and a transfer method are provided. A mask member includes a first mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the first mask includes a plurality of opening patterns, and a second mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the second mask includes a plurality of opening patterns disposed at angles relative to a center of the second mask. The mask member defining a transfer area by overlapping an opening pattern of the plurality of opening patterns of the first mask and an opening pattern of the plurality of opening patterns of the second mask.
MASK-TO-DONOR ALIGNMENT FOR LASER-INDUCED FORWARD TRANSFER
A mask-to-donor alignment method for laser-induced forward transfer includes (a) directing a laser beam onto a mask to produce a masked beam including one or more separate sub-beams, each sub-beam being transmitted by a respective aperture of the mask, (b) viewing each sub-beam, as transmitted by a donor substrate carrying one or more devices, to obtain imagery indicating in each sub-beam a shadow of a corresponding one of the one or more devices, and (c) based on the imagery, adjusting position of the masked beam and the donor substrate, relative to each other, so as to align each device with respect to the corresponding sub-beam. This in-situ observation of the relative alignment between the donor substrate and the masked beam produces an improved alignment accuracy, as compared to the indirect fiducial-based alignment method. Alignment accuracies better than 0.2 m, and associated sub-1 m LIFT positioning accuracies, have been demonstrated.
Display device and method for manufacturing the same
A display device comprises a light emitting area and a sub-area spaced apart from each other a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a first insulating layer disposed on the first electrode and the second electrode, a bank layer disposed on the first insulating layer and disposed between the light emitting area and the sub-area, light emitting elements disposed on the first electrode and the second electrode, a first connection electrode electrically connected to an end of the light emitting element and a second connection electrode connected to another end of the light emitting element, and auxiliary electrodes disposed between the substrate and the bank layer and spaced apart from each other with the light emitting area and the sub-area disposed between the auxiliary electrodes.
Display device and method for manufacturing the same
A display device comprises a light emitting area and a sub-area spaced apart from each other a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a first insulating layer disposed on the first electrode and the second electrode, a bank layer disposed on the first insulating layer and disposed between the light emitting area and the sub-area, light emitting elements disposed on the first electrode and the second electrode, a first connection electrode electrically connected to an end of the light emitting element and a second connection electrode connected to another end of the light emitting element, and auxiliary electrodes disposed between the substrate and the bank layer and spaced apart from each other with the light emitting area and the sub-area disposed between the auxiliary electrodes.
DISPLAY DEVICE
A display device for projecting light to an object includes a substrate having a first region overlapping a first curved surface of the object and a second region overlapping a second curved surface of the object, light-emitting elements disposed on the substrate, and a light adjusting layer disposed on the light-emitting elements. The light-emitting elements include a first light-emitting element disposed in the first region and a second light-emitting element disposed in the second region. The light adjusting layer includes a first light-adjusting element enabling the first light-emitting element to emit a first emitted light with a first light-emitting direction and a second light-adjusting element enabling the second light-emitting element to emit a second emitted light with a second light-emitting direction. An included angle between the second light-emitting direction and a normal direction of the substrate is greater than that between the first light-emitting direction and the normal direction.
Method of manufacturing a photonic device
A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.