A display device includes: a first substrate divided into an active area and a peripheral area adjacent to the active area, an insulating layer disposed on the first substrate, a pixel defining film disposed on the insulating layer, a light emitting element disposed on the insulating layer, an inorganic layer disposed on the pixel defining film, a second substrate disposed on the inorganic layer, a sealing part disposed between the first substrate and the second substrate and overlapping the peripheral area, and a filling material disposed to fill an inner space defined by the first substrate, the second substrate, and the sealing part. In the peripheral area, the insulating layer may be spaced apart from the filling material with the inorganic layer therebetween.

A pixel-driving circuit for driving a digital display device, the pixel-driving circuit formed on an interposer that is electrically connected to a display substrate through a plurality of bumps. The pixel-driving circuit comprises a row terminal connected to a row bump connected to a row line of a row-driving circuit among the plurality of bumps, a column terminal connected to a column bump connected to a column line of a column-driving circuit among the plurality of bumps, a common element that shares at least one of the row terminal or the column terminal for L (Lis a positive integer greater than or equal to 2) display pixels formed on the interposer, and L pixel individual elements connected to the common element and driving a plurality of light emitters included in each of the L display pixels.

An LED source includes a CMOS layer, a GaN LED layer, and a bulk In.sub.xGa.sub.1-xN color conversion layer. The CMOS layer contains CMOS driver circuits. The GaN LED layer is attached to the CMOS layer. It is patterned into an array of LEDs connected to and driven by the driver circuits. The bulk In.sub.xGa.sub.1-xN color conversion layer is attached to the GaN LED layer. The bulk In.sub.xGa.sub.1-xN color conversion layer is patterned into color conversion elements aligned with corresponding LEDs to convert light from the LEDs to a different wavelength.

An LED source includes a CMOS layer, a GaN LED layer, and a bulk In.sub.xGa.sub.1-xN color conversion layer. The CMOS layer contains CMOS driver circuits. The GaN LED layer is attached to the CMOS layer. It is patterned into an array of LEDs connected to and driven by the driver circuits. The bulk In.sub.xGa.sub.1-xN color conversion layer is attached to the GaN LED layer. The bulk In.sub.xGa.sub.1-xN color conversion layer is patterned into color conversion elements aligned with corresponding LEDs to convert light from the LEDs to a different wavelength.

An electronic device includes: a first substrate; a second substrate disposed adjacent to the first substrate, wherein a tiling gap is between the first substrate and the second substrate; a plurality of light emitting elements respectively disposed on the first substrate and the second substrate; a cover layer disposed on the first substrate and the second substrate and covering the plurality of light emitting elements; and a low transmittance film disposed on the cover layer, wherein the low transmittance film and the tiling gap are overlapped in a normal direction of the electronic device.

An electronic device includes: a first substrate; a second substrate disposed adjacent to the first substrate, wherein a tiling gap is between the first substrate and the second substrate; a plurality of light emitting elements respectively disposed on the first substrate and the second substrate; a cover layer disposed on the first substrate and the second substrate and covering the plurality of light emitting elements; and a low transmittance film disposed on the cover layer, wherein the low transmittance film and the tiling gap are overlapped in a normal direction of the electronic device.

A display panel includes a first substrate, a second substrate, a plurality of light-emitting components, a bonding layer and a driving component. The first substrate includes a planar portion and a bending portion. The second substrate is disposed on the first substrate. The light-emitting components are disposed on the second substrate. The bonding layer is disposed between the planar portion of the first substrate and the second substrate. The driving component is disposed on a first surface of the bending portion of the first substrate and electrically connected to the light-emitting components. The first surface of the bending portion extends from a surface of the planar portion adjacent to the second substrate, and a projection of the bending portion in a vertical direction falls within the second substrate. A tiled display device including multiple display panels and a manufacturing method of the display panel are also provided.

A display panel includes a first substrate, a second substrate, a plurality of light-emitting components, a bonding layer and a driving component. The first substrate includes a planar portion and a bending portion. The second substrate is disposed on the first substrate. The light-emitting components are disposed on the second substrate. The bonding layer is disposed between the planar portion of the first substrate and the second substrate. The driving component is disposed on a first surface of the bending portion of the first substrate and electrically connected to the light-emitting components. The first surface of the bending portion extends from a surface of the planar portion adjacent to the second substrate, and a projection of the bending portion in a vertical direction falls within the second substrate. A tiled display device including multiple display panels and a manufacturing method of the display panel are also provided.

The present application discloses a manufacturing method for a display module and a display screen. The method includes: forming a semiconductor device by pre-processing a semiconductor epitaxial wafer; forming a first transparent layer on a substrate surface of the semiconductor device; forming a first opening exposing the substrate by etching the first transparent layer; forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer in the outer region of the first opening, and remaining the first quantum dot layer inside the first opening; and forming a DBR film layer that filters blue light.

The present application discloses a manufacturing method for a display module and a display screen. The method includes: forming a semiconductor device by pre-processing a semiconductor epitaxial wafer; forming a first transparent layer on a substrate surface of the semiconductor device; forming a first opening exposing the substrate by etching the first transparent layer; forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer in the outer region of the first opening, and remaining the first quantum dot layer inside the first opening; and forming a DBR film layer that filters blue light.