Patent classifications
H10H29/03
TARGET CARRIER, SEMICONDUCTOR DEVICE AND METHOD FOR TRANSFERRING A SEMICONDUCTOR COMPONENT AND HOLDING STRUCTURE
In an embodiment a target carrier for transferring semiconductor components includes a target substrate with at least two contact areas and a shrinkable collecting layer arranged around each of the at least two contact areas and projecting beyond the at least two contact areas, wherein a lateral distance between two opposite edges of the shrinkable collecting layer around each of the at least two contact areas is smaller than a lateral dimension of the at least one contact pad of the semiconductor components, wherein the shrinkable collecting layer around the at least two contact areas is designed such that its structuring is configured to penetrate into the shrinkable collecting layer with a substantially central alignment of the at least one contact pad relative to one of the at least two contact areas.
TARGET CARRIER, SEMICONDUCTOR DEVICE AND METHOD FOR TRANSFERRING A SEMICONDUCTOR COMPONENT AND HOLDING STRUCTURE
In an embodiment a target carrier for transferring semiconductor components includes a target substrate with at least two contact areas and a shrinkable collecting layer arranged around each of the at least two contact areas and projecting beyond the at least two contact areas, wherein a lateral distance between two opposite edges of the shrinkable collecting layer around each of the at least two contact areas is smaller than a lateral dimension of the at least one contact pad of the semiconductor components, wherein the shrinkable collecting layer around the at least two contact areas is designed such that its structuring is configured to penetrate into the shrinkable collecting layer with a substantially central alignment of the at least one contact pad relative to one of the at least two contact areas.
Transfer Process for Micro Elements
The invention relates a transfer process for micro elements, including at least one picking step wherein at least one micro element is picked up from at least one donor surface by at least one transfer surface and at least one placing step wherein at least one micro element is placed upon at least one receiving surface from at least one transfer surface, wherein the process according to the invention enables that at least the picking step benefits of several flexible parameters.
Transfer Process for Micro Elements
The invention relates a transfer process for micro elements, including at least one picking step wherein at least one micro element is picked up from at least one donor surface by at least one transfer surface and at least one placing step wherein at least one micro element is placed upon at least one receiving surface from at least one transfer surface, wherein the process according to the invention enables that at least the picking step benefits of several flexible parameters.
DEVICE FOR MANUFACTURING DISPLAY DEVICE
A manufacturing device for a display device comprises: a chamber in which a display substrate is installed and comprises a fluid; a magnetic member on one side of the display substrate; And a signal supply device is included, wherein the signal supply device modulates a first alternating current signal into a second alternating current signal and supplies the modulated second alternating current signal to electrode wiring of the display substrate, and the second alternating current signal periodically changes a dielectrophoretic force to attach and detach a plurality of semiconductor light-emitting elements contained in the fluid to a plurality of assembly holes of the display substrate, respectively.
DEVICE FOR MANUFACTURING DISPLAY DEVICE
A manufacturing device for a display device comprises: a chamber in which a display substrate is installed and comprises a fluid; a magnetic member on one side of the display substrate; And a signal supply device is included, wherein the signal supply device modulates a first alternating current signal into a second alternating current signal and supplies the modulated second alternating current signal to electrode wiring of the display substrate, and the second alternating current signal periodically changes a dielectrophoretic force to attach and detach a plurality of semiconductor light-emitting elements contained in the fluid to a plurality of assembly holes of the display substrate, respectively.
OPTOELECTRONIC MICRODEVICE
The present disclosure relates to development of microdevices on a substrate that can be released and transferred to a system substrate. The disclosure further relates to methods to integrate anchors to hold a microdevice to a substrate. The microdevices are in different configurations with respect to anchors, release layers, buffers layers and substrate.
OPTOELECTRONIC MICRODEVICE
The present disclosure relates to development of microdevices on a substrate that can be released and transferred to a system substrate. The disclosure further relates to methods to integrate anchors to hold a microdevice to a substrate. The microdevices are in different configurations with respect to anchors, release layers, buffers layers and substrate.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE
The semiconductor light-emitting element includes a light-emitting portion, a first electrode under the light-emitting portion, a second electrode on the light-emitting portion, a passivation layer surrounding the light-emitting portion, and a first structure surrounding the passivation layer. Since the width is increased by the first structure, the aspect ratio (AR) is reduced, the semiconductor light-emitting element moves without being tilted during self-assembly, so that the assembly defect of semiconductor light-emitting element can be prevented, the assembly rate can be improved, and the assembly speed can be increased.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE
The semiconductor light-emitting element includes a light-emitting portion, a first electrode under the light-emitting portion, a second electrode on the light-emitting portion, a passivation layer surrounding the light-emitting portion, and a first structure surrounding the passivation layer. Since the width is increased by the first structure, the aspect ratio (AR) is reduced, the semiconductor light-emitting element moves without being tilted during self-assembly, so that the assembly defect of semiconductor light-emitting element can be prevented, the assembly rate can be improved, and the assembly speed can be increased.