In an embodiment a method includes providing a carrier, applying a plurality of semiconductor chips to the carrier, the semiconductor chips being spaced apart from one another such that cavities are formed between the semiconductor chips, introducing a photo-exposable material, at least the cavities being filled with the photo-exposable material, exposing the photo-exposable material, wherein parts of the photo-exposable material, which are downstream of the semiconductor chips with respect to an exposure remain unexposed, removing unexposed parts of the photo-exposable material, wherein recesses are formed, applying a functional layer to the semiconductor chips, and removing the exposed photo-exposable material.

An electronic device includes a substrate, a circuit layer, and a semiconductor chip. The circuit layer is disposed on the substrate. The semiconductor chip is disposed on the substrate and electrically connected to the circuit layer. The semiconductor chip includes a semiconductor die, a filler layer, a first electrode, a second electrode, and a reflective layer. The semiconductor die includes a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked in sequence. The filler layer surrounds the semiconductor die. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. Additionally, a semiconductor chip and a method for manufacturing an electronic device are provided.

An electronic device includes a substrate, a circuit layer, and a semiconductor chip. The circuit layer is disposed on the substrate. The semiconductor chip is disposed on the substrate and electrically connected to the circuit layer. The semiconductor chip includes a semiconductor die, a filler layer, a first electrode, a second electrode, and a reflective layer. The semiconductor die includes a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked in sequence. The filler layer surrounds the semiconductor die. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. Additionally, a semiconductor chip and a method for manufacturing an electronic device are provided.

A method and system for light induced transfer of components (15) from a donor substrate (10) to an acceptor substrate (20). The donor substrate (10) comprises a transparent carrier (11) configured to carry the components (15) facing the acceptor substrate (20), and a release stack (S). The release stack (S) comprises a light-absorbing layer (12), a decomposition layer (16), a melt layer (13), and an adhesive layer (14). The light-absorbing layer (12) has a high absorption coefficient for absorbing the light beam (L) causing heat conduction to the melt layer (13). The light-absorbing layer (12) remains solid while the melt layer (13) is melted. The adhesive layer (14) adheres the components (15) to the melt layer (13) while the melt layer (13) is solid and releases adhesion when the melt layer (13) is melted (M). The decomposition layer (16) has an evaporation temperature above the melting temperature of the melt layer, and forms a bubble (17) stimulating the release and transfer when the melt layer 913) is liquid.

A method and system for light induced transfer of components (15) from a donor substrate (10) to an acceptor substrate (20). The donor substrate (10) comprises a transparent carrier (11) configured to carry the components (15) facing the acceptor substrate (20), and a release stack (S). The release stack (S) comprises a light-absorbing layer (12), a decomposition layer (16), a melt layer (13), and an adhesive layer (14). The light-absorbing layer (12) has a high absorption coefficient for absorbing the light beam (L) causing heat conduction to the melt layer (13). The light-absorbing layer (12) remains solid while the melt layer (13) is melted. The adhesive layer (14) adheres the components (15) to the melt layer (13) while the melt layer (13) is solid and releases adhesion when the melt layer (13) is melted (M). The decomposition layer (16) has an evaporation temperature above the melting temperature of the melt layer, and forms a bubble (17) stimulating the release and transfer when the melt layer 913) is liquid.

A method of manufacturing an electronic device, including the forming, in a first handle having first and second opposite surfaces, of grooves in the first surface, the bonding of the first handle to a second handle on the side of the first surface, the thinning of the first handle on the side of the second surface, the manufacturing of a plate including a plurality of copies of the electronic device, the bonding of the plate to the second surface of the first handle, the forming of trenches in the plate in line with the grooves, the removal of the second handle, and the breakage of the first handle at the bottom of the grooves to separate the electronic devices.

A method of manufacturing an electronic device, including the forming, in a first handle having first and second opposite surfaces, of grooves in the first surface, the bonding of the first handle to a second handle on the side of the first surface, the thinning of the first handle on the side of the second surface, the manufacturing of a plate including a plurality of copies of the electronic device, the bonding of the plate to the second surface of the first handle, the forming of trenches in the plate in line with the grooves, the removal of the second handle, and the breakage of the first handle at the bottom of the grooves to separate the electronic devices.

A micro semiconductor chip includes a semiconductor multilayer and at least one electrode on at least one surface of the semiconductor multilayer, wherein the semiconductor multilayer may have a polygonal planar shape and rounded corners.

A micro semiconductor chip includes a semiconductor multilayer and at least one electrode on at least one surface of the semiconductor multilayer, wherein the semiconductor multilayer may have a polygonal planar shape and rounded corners.

A curable composition including (A) a semiconductor nanorod, (B) a photopolymerizable monomer including a compound having an unsaturated carbon-carbon double bond, (C) a photopolymerization initiator including a compound of a specific structure, and (D) a solvent, a film manufactured using the same, and a display device including the film are provided.