An electromechanical transducer element includes a base substrate, a first electrode on the base substrate, a piezoelectric body on the first electrode, and a second electrode on the piezoelectric body. The base substrate has a void area opposite to the piezoelectric body via the first electrode, and a width of the void area on a cross section cut along a layer direction of the electromechanical transducer element satisfies 0.65≤Pw/Cw≤0.95, where Cw represents the width of the void area, and Pw represents a width of the piezoelectric body on the cross section.

A compact system for optimizing energy harvesting efficiency using of very thin (less than 10 μm thickness) PVDF films. The system is comprised of a flexible substrate such as polypropylene (PP) or Polydimethylsiloxane (PDMS) that supports PVDF thin films sandwiched between two aluminum electrode sheets. The PVDF films may be fabricated at different selected thicknesses by increasing spin rates. The PVDF films may also be fabricated in various different stacking arrangements in order to further allow the electrode to more efficiently produce energy.

A piezoelectric element includes a first electrode layer, a piezoelectric layer, and a second electrode layer. The first electrode layer, the piezoelectric layer, and the second electrode layer are stacked in sequence on one another. The first electrode layer has a first part overlapping the piezoelectric layer in a plan view, and a second part at least partially separated from the first part and not overlapping the piezoelectric layer in the plan view. The second electrode layer has a third part overlapping the piezoelectric layer in the plan view, and a fourth part separated from the third part. The fourth part is in contact with the first part and the second part.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

A piezoelectric element includes a first electrode layer, a piezoelectric layer, and a second electrode layer. The first electrode layer, the piezoelectric layer, and the second electrode layer are stacked in sequence on one another. The first electrode layer has a first part overlapping the piezoelectric layer in a plan view, and a second part at least partially separated from the first part and not overlapping the piezoelectric layer in the plan view. The second electrode layer has a third part overlapping the piezoelectric layer in the plan view, and a fourth part separated from the third part. The fourth part is in contact with the first part and the second part.

A functional vehicle component and related methods include a functional leather assembly fixed over a vehicle component. The functional leather assembly includes a leather sheet, a flexible electronic circuit arranged on a first surface of the leather sheet that faces away from the vehicle component to thereby define an outermost surface of the leather sheet, and including a piezoelectric switch that can be actuated to make or break a conductive path in the circuit; and a pigmented coating arranged over the circuit. Upon actuation of the piezoelectric switch to make or break the conductive path in the circuit, the piezoelectric switch provides a haptic signal that indicates the actuation of the piezoelectric switch.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A method of additively-manufacturing a flexible sensor system having a lattice topology includes a number of electrical interconnects, each having one or more electrically-conductive layers alternately sandwiched between two or more dielectric layers, and two or more sensors defining a sensor array, each sensor located at an intersection of and electrically connected to the interconnects on the lattice topology and electrically-connected to the interconnects. Each of the electrically-conductive layers includes a cured material base and silver, copper, aluminum, gold, platinum, ruthenium, carbon, and/or alloys thereof, and each of the dielectric layers includes a cured material base. The additively-manufactured flexible sensor system is configured to be installed on the surface of an asset for the monitoring of that asset.

A piezoelectric element having a vibrating section including a vibrating plate, a first electrode, a piezoelectric layer, and a second electrode, in which a crystal orientation of a piezoelectric material forming the piezoelectric layer is (100) and a crystal structure of the piezoelectric material is a tetragonal crystal, and a total thickness T.sub.1 of the vibrating plate and the first electrode and a total thickness T.sub.2 of the piezoelectric layer and the second electrode have a relationship of T.sub.1T.sub.2.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.