Patent classifications
H01L39/16
Switch cell device
Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.
Superconducting Signal Amplifier
A system includes a plurality of superconducting wires connected in parallel with one another. The plurality of superconducting wires includes a first superconducting wire and a second superconducting wire. The plurality of superconducting wires are configured to, while receiving a bias current provided to the parallel combination of the plurality of superconducting wires, operate in a superconducting state in the absence of a trigger current. The first superconducting wire is configured to, while receiving the bias current, transition to a non-superconducting state in response to receiving the trigger current. The second superconducting wire is configured to, while receiving the bias current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.
Superconducting field-programmable gate array
A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.
ON-CHIP TUNABLE DISSIPATIONLESS INDUCTOR
A controllable superconducting inductor circuit comprises: a plurality of sub-circuits, each sub-circuit comprising: an inductor element; and a control element coupled to the inductor element to induce current in the inductor element in response to a control signal received at the control element. The inductor elements from the plurality of sub-circuits are arranged in parallel between a first pair of nodes to provide a tunable total inductance L.sub.tun. For each of the plurality of sub-circuits, the inductor element behaves as a superconducting kinetic inductance element when the current induced therein is less than a threshold level and behaves as a normal, non-superconducting inductor when the current induced therein is greater than the threshold level.
Annular bearer network and service bearing implementation method therefor
Provided are a method and apparatus for calculating fault resistance and a current-limiting current of a superconducting fault current limiter. The method includes: calculating a first short-circuit fault current I.sub.n(t) of a power grid short-circuit fault transient circuit; calling an external characteristic model U(I,t), and calculating resistance R.sub.n(t) of a superconducting fault current limiter under the first short-circuit fault current I.sub.n(t); adding the resistance R.sub.n(t) of the superconducting fault current limiter into the power grid short-circuit fault transient circuit, and calculating a second short-circuit fault current I.sub.m(t), where m=n+1; and determining whether an error between the second short-circuit fault current I.sub.m(t) and the first short-circuit fault current I.sub.n(t) is smaller than a preset threshold value, if yes, determining the fault resistance and the current-limiting current of the superconducting fault current limiter to be R.sub.n(t) and I.sub.m(t) respectively; otherwise, I.sub.n(t)=I.sub.m(t), returning for iteration.
PARTIALLY-INSULATED HTS COILS
A high temperature superconducting, HTS, field coil. The HTS field coil has a plurality of turns and a semiconductor, arranged such that current can be shared between the turns via the semiconductor.
Superconducting Logic Circuits
An electric circuit includes a plurality of superconducting components, each of the plurality of superconducting components having: a respective first terminal; a respective second terminal; and a respective input. The electric circuit further includes a bias current source electrically-connected to the respective first terminal of each of the plurality of superconducting components. The bias current source is configured to provide a bias current adapted to cause the electric circuit to function as a logical OR gate on the respective inputs of the plurality of superconducting components. The electric circuit further includes an output node adapted to output a state of the logical OR gate.
Superconducting Field-Programmable Gate Array
A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.
Memory Device and Method for Its Operation
The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ.sub.1 and ρ.sub.2 at the same temperature, wherein ρ.sub.1 is different to ρ.sub.2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.
Scale-up toroidal array quantum processing memory device with controllable and adjustable state-switch valves of making and applications thereto
The present invention provides a sensor and measuring method. The sensor comprises multiple-layer organo-metallic cross-linked polymers forming various superlattice nanostructured biomimetic membranes for sensing Cooper-pair wave transmissions causing intrinsic magnetic flux quantum observed based on a Josephson junction toroidal array and a controllable state-switch valve having a double-pole electron-relay that promoted Cooper pairs coherently transmitting waves in the membranes within and cross the Josephson toroidal junction barriers at zero-bias. The One-Device-Assembly system enables a femto-joule energy consumption for quantum qubits; or acting as an energy storage device that stores energy 1.53 MJ/cm.sup.2 for an application in automobile vehicles.