A resonator is described including a piezoelectric material with first and second electrodes provided on the piezoelectric material. An acoustic metamaterial at least partially surrounds an active region of the resonator.

A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.

An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon, a bonding layer on the intermediate layer and composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, a high resistance silicon and hafnium oxide, a supporting body composed of a polycrystalline ceramic and bonded to the bonding layer by direct bonding, and an electrode on the piezoelectric material substrate.

A piezoelectric material includes a first material layer including a polycrystalline lead zinc niobate-lead zirconate titanate material arranged in a 001 crystal direction; and a second material layer including a mono-crystalline material having a 001 crystal face, wherein the lead zinc niobate-lead zirconate titanate and the mono-crystalline material are different. Also a piezoelectric device including the piezoelectric material.

Provided is a display device containing a crystalline piezoelectric polymer layer having a helical chiral polymer (A) that has a weight average molecular weight of from 50,000 to 1,000,000 and has optical activity, an optical compensation layer satisfying the following expression (1), and a linear polarizer. In expression (1), Xc represents a degree of crystallinity (%) of the crystalline piezoelectric polymer layer obtained by a DSC method; MORc represents a standardized molecular orientation of the crystalline piezoelectric polymer layer measured by a microwave transmission molecular orientation meter when a reference thickness is 50 ?m; d represents a thickness (?m) of the crystalline piezoelectric polymer layer; and Rth represents a phase difference (nm) in a thickness direction of the optical compensation layer at a wavelength of 550 nm.
|0.06?Xc?MORc?d+Rth|?500Expression (1):

A resonator is described including a piezoelectric material with first and second electrodes provided on the piezoelectric material. An acoustic metamaterial at least partially surrounds an active region of the resonator.

A bulk acoustic wave resonator includes a substrate on which a substrate protective layer is disposed, a membrane layer forming a cavity together with the substrate, and a resonant portion disposed on the membrane layer. The cavity is formed by removing a sacrificial layer using a mixed gas obtained by mixing a halide-based gas and an oxygen gas, and at least one of the membrane layer and the substrate protective layer has a thickness difference of 170 ? or less, after the cavity is formed.

A vibration actuator includes an elastic body on which at least one projection is formed and a vibrating body including an electromechanical conversion device, and drives a driven member that is in contact with a contact portion of the projection by causing an end portion of the projection to perform an ellipsoidal movement in response to a combination of two vibration modes generated in the vibrating body when an alternating driving voltage is applied. The elastic body is formed integrally with the projection and a bonding portion between the projection and the electromechanical conversion device. A space is provided between the contact portion and the electromechanical conversion device to which the projection is bonded. The spring portion is provided between the bonding portion and the contact portion and causes the projection to exhibit a spring characteristic when the contact portion is pressed by the driven member.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

An elastic wave device includes a piezoelectric substrate with first and second main surfaces internally facing each other, an elastic-wave element that includes an interdigital transducer electrode provided on or in the first main surface of the piezoelectric substrate, and a first protective film that is provided on the first main surface of the piezoelectric substrate so as to cover the IDT electrode. The IDT electrode includes a main electrode layer made of a metal having a density higher than that of the first protective film. The piezoelectric substrate has a thickness of about 0.35 mm or smaller, and irregularities are located on the second main surface.