In an embodiment an optoelectronic package includes a carrier substrate having at least two through vias filled with an electrically conductive material, at least one optoelectronic component arranged on the carrier substrate, wherein the at least one optoelectronic component is configured to generate light in an ultraviolet range, and wherein the at least one optoelectronic component has at least two connection regions, each of which is electrically coupled to one of the two electrically conductive vias and a package material surrounding the at least one optoelectronic component, wherein the package material is based on a fluoropolymer and covers side surfaces of the at least one optoelectronic component at least in regions, and wherein a top surface of the at least one optoelectronic component opposite the connection regions remains free of the package material.

Disclosed are an integrated LED packaging structure and a packaging method, and relates to the technical field of LED packaging. The disclosure includes a shell, a bottom end of the shell is fixedly connected to a pin platform, a top end of the shell is fixedly connected to an LED plug, three lamp beads are fixedly mounted at a top end of the LED plug, a bottom end of the pin platform is fixedly connected to a cup cavity, and a bottom end of the cup cavity is fixedly connected to connecting pins. The top end of the LED plug is provided with LED sockets in positions corresponding to the lamp beads, and bottom ends of inner sides of the LED sockets are fixedly connected to insulating plates. Furthermore, a combination of an in-line and SMD form is adopted, and the lower half part adopts an SMD structure.

Disclosed are an integrated LED packaging structure and a packaging method, and relates to the technical field of LED packaging. The disclosure includes a shell, a bottom end of the shell is fixedly connected to a pin platform, a top end of the shell is fixedly connected to an LED plug, three lamp beads are fixedly mounted at a top end of the LED plug, a bottom end of the pin platform is fixedly connected to a cup cavity, and a bottom end of the cup cavity is fixedly connected to connecting pins. The top end of the LED plug is provided with LED sockets in positions corresponding to the lamp beads, and bottom ends of inner sides of the LED sockets are fixedly connected to insulating plates. Furthermore, a combination of an in-line and SMD form is adopted, and the lower half part adopts an SMD structure.

There is disclosed a method of manufacturing a light emitting diode (LED) arrangement, the method comprising the steps of installing an LED on a circuit board; and covering the circuit board and other electronic components on the circuit board with a layer of silicon coating; wherein a top emitting area of the LED is kept exposed or uncovered for increasing efficiency of the LED arrangement. Also disclosed is a lighting system, comprising a plurality of light emitting diode (LED) strips in connection with a photo-voltaic (PV) panel, the LED strips comprising a plurality of LEDs and infra-red (IR) LEDs, wherein the plurality of LEDs and IR LEDs are installed on the LED strips at a ratio of 1:8, for mitigating shadow losses and for increasing efficiency of the lighting arrangement.

There is disclosed a method of manufacturing a light emitting diode (LED) arrangement, the method comprising the steps of installing an LED on a circuit board; and covering the circuit board and other electronic components on the circuit board with a layer of silicon coating; wherein a top emitting area of the LED is kept exposed or uncovered for increasing efficiency of the LED arrangement. Also disclosed is a lighting system, comprising a plurality of light emitting diode (LED) strips in connection with a photo-voltaic (PV) panel, the LED strips comprising a plurality of LEDs and infra-red (IR) LEDs, wherein the plurality of LEDs and IR LEDs are installed on the LED strips at a ratio of 1:8, for mitigating shadow losses and for increasing efficiency of the lighting arrangement.

A light-emitting display device 1 of the present invention includes: a base material 10 having a light source 11 mounted thereon; and a foam layer 30 that transmits and diffuses the light from the light source 11 and has at least a portion of the light source 11 embedded therein. According to the present invention, a light-emitting display device that can effectively utilize light from the light source is provided with a simplified component configuration.

A light-emitting display device 1 of the present invention includes: a base material 10 having a light source 11 mounted thereon; and a foam layer 30 that transmits and diffuses the light from the light source 11 and has at least a portion of the light source 11 embedded therein. According to the present invention, a light-emitting display device that can effectively utilize light from the light source is provided with a simplified component configuration.

The present disclosure relates to development of microdevices on a substrate that can be released and transferred to a system substrate. The disclosure further relates to methods to integrate anchors to hold a microdevice to a substrate. The microdevices are in different configurations with respect to anchors, release layers, buffers layers and substrate.

The present disclosure relates to development of microdevices on a substrate that can be released and transferred to a system substrate. The disclosure further relates to methods to integrate anchors to hold a microdevice to a substrate. The microdevices are in different configurations with respect to anchors, release layers, buffers layers and substrate.

A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extend to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact, reducing non-radiative recombination at the side surfaces. The LED can include a front reflector with a central opening aligned with the anode contact. The LED can include front, side, and back reflectors to form an optical cavity enclosing the n- and p-doped semiconductor layers and the active layer. At least a portion of the central opening is positioned opposite at least a portion of the central area of the anode contact surface.