The disclosure discloses a backlight module and a display device including the same. The backlight module includes a substrate, a light source assembly disposed on the substrate and including a plurality of light-emitting chips disposed at intervals, and a light guide plate disposed on the light source assembly. A surface of the light guide plate facing the substrate is provided with a plurality of grooves where one of the light-emitting chips is correspondingly disposed in one of the grooves, a bottom of each of the grooves is provided with a plurality of first concave parts disposed at intervals, and each of the first concave parts is defined with an arc surface recessed towards a direction away from the substrate.

Provided are a method for manufacturing a display panel, a display panel and a display device, which relate to the field of display technology and are used to optimize the performance of the display panel. The method includes: forming a light-emitting device layer on one side of a substrate, the light-emitting device layer including a plurality of light-emitting elements; forming a first light management layer on a side of the light-emitting device layer away from the substrate, the first light management layer including a plurality of openings spaced apart from each other; forming a second light management layer, at least part of which being located in the openings, the second light management layer including resin and dye, a photocuring treatment and a thermal curing treatment are performed during the formation of the second light management layer, and the photocuring treatment is performed earlier than the thermal curing treatment.

This application provides a pixel unit, a manufacturing method therefor, a microdisplay, and a pixel-level discrete device. The pixel unit includes a backplane and a display unit. The display unit is arranged on the backplane, and includes a first device layer and a second device layer. The first device layer includes a first compound light-emitting layer and a second compound light-emitting layer. The second device layer includes a color conversion layer and a third compound light-emitting layer. The color conversion layer is arranged above the first compound light-emitting layer. The color conversion layer is arranged, so that the compound light-emitting layer can implement color development through color conversion, to reduce power and improve performance. The pixel unit occupies less space in the horizontal direction. A decrease in external quantum efficiency caused by a size effect is effectively reduced, power consumption is effectively reduced, and performance such as brightness is improved.

In an embodiment a display unit includes a first contact layer, a second contact layer, a plurality of connection region and a plurality of optoelectronic semiconductor components, wherein the first contact layer has a plurality of row lines at a row spacing from one another, wherein the second contact layer has a plurality of column lines at a column spacing from one another, wherein the first contact layer and the second contact layer are arranged stacked, wherein each of the connection regions electrically conductively connects at least one row line to at least one column line, and wherein the row spacing deviates by less than 50% from the column spacing.

A semiconductor device includes: a first light-emitting unit and a second light-emitting unit, wherein: the first light-emitting unit includes: a first lower semiconductor stack, including a first sub-sidewall; a first upper semiconductor stack, formed on the first lower semiconductor stack, including a second sub-sidewall; and a first sidewall, including the first sub-sidewall and the second sub-sidewall; wherein the first lower semiconductor stack includes a first upper surface not covered by the first upper semiconductor stack; the second light-emitting unit includes: a second lower semiconductor stack; a second upper semiconductor stack formed on the second lower semiconductor stack; wherein the second lower semiconductor stack includes a second upper surface not covered by the second upper semiconductor stack; a connecting electrode, formed on the first light-emitting unit and the second light-emitting unit and contacting the second upper surface to electrically connect the first light-emitting unit and the second light-emitting unit; and a first contact electrode, formed on the first upper surface and electrically connected to the first lower semiconductor stack, including a fist contact pad; wherein: the first sub-sidewall and the second sub-sidewall are directly connected to form a first slope; and in a top view, the second upper surface surrounds the second upper semiconductor stack.

A light-emitting device includes a substrate; a frame disposed on an upper surface of the substrate; a first light-emitting element disposed on the upper surface of the substrate and within a first region along an inner periphery of the frame; a second light-emitting element disposed on the upper surface of the substrate and within a second region surrounded by the first region; a wall part disposed on the upper surface of the substrate, contacting the frame, and extending from the inner periphery of the frame toward the second region; a wavelength conversion member disposed on the upper surface of the substrate and within a region surrounded by the frame, and covering the wall part, the first light-emitting element, and the second light-emitting element; and a circuit including a first drive circuit that drives the first light-emitting element and a second drive circuit that drives the second light-emitting element.

A semiconductor light emission element includes: a substrate having insulating or semi-insulating properties; a light-emitting functional layer where a first semiconductor layer having a first polarity, a light emission layer, and a second semiconductor layer having a second polarity are sequentially laminated on the substrate; an insulating film covering the light-emitting functional layer; a first pad electrode and a second pad electrode electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, and at least one intermediate pad electrically insulated from the light-emitting functional layer, the first, second, and at least one intermediate pads being provided on the insulating film; and a pad separation groove separating each of the first pad electrode, the second pad electrode, and the intermediate pad, and exposing the insulating film.

A light-emitting element, a light-emitting device and a display device are provided, which relate to the technical filed of semiconductor devices. The light-emitting element is a flip-chip light-emitting diode, and has a light-emitting surface and a backlight surface respectively located on outermost sides of the flip-chip light-emitting diode and opposite to each other; the flip-chip light-emitting diode includes an epitaxial staked layer configured to generate predetermined light; and a light-splitting layer disposed on a side of the epitaxial stacked layer proximate to the light-emitting surface; the light-splitting layer is configured to reflect predetermined light with an incident complementary angle of a first angle, transmit predetermined light with an incident complementary angle of a second angle, and reflect predetermined light with an incident complementary angle of a third angle; and the first angle is smaller than the second angle, and the second angle is smaller than the third angle.

A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.

A micro-LED display panel includes a micro-LED display chip including a micro-LED array area and an IC (integrated circuit) backplane, wherein the micro-LED array area is provided on the IC backplane; an image light rotating element including a transmission lens assembly provided above the micro-LED display chip and including a transmission lens over the micro-LED array area; and a lens position rotating actuator configured to rotate the transmission lens about at least one preset axis, wherein the at least one preset axis is parallel to the micro-LED array area; and a holder provided on the micro-LED display chip and configured to support the transmission lens assembly.