This LED panel comprising: a base substrate including circuit wiring; a plurality of light-emitting diodes disposed to form an array on the base substrate; a side optical layer located laterally to the plurality of light-emitting diodes and including a diffusing agent; and a plurality of upper optical layers respectively located on top of the plurality of light-emitting diodes and including a diffusing agent can provide uniform light in all directions through uniform light distribution by reducing color difference for different viewing angles that occurs due to the structure of a semiconductor light-emitting diode.

In an LED display device according to an embodiment of the present disclosure, the LED display device comprises a second pixel driving circuit on a substrate, an LED element attached to a region not overlapping the second pixel driving circuit, including a first LED element, a second LED element and a growth substrate, and providing a double light-emitting spectrum, an element fixing layer surrounding the LED element, a first pixel driving circuit on the element fixing layer, and an element protecting layer on the first pixel driving circuit. In addition, the first LED element is controlled by the first pixel driving circuit, and the second LED element is controlled by the second pixel driving circuit. Therefore, the LED display device provides a dual emission spectrum, can realized high luminance and high definition, and can prevent a pixel defect.

A semiconductor device includes: a first light-emitting unit and a second light-emitting unit, wherein: the first light-emitting unit includes: a first lower semiconductor stack, including a first sub-sidewall; a first upper semiconductor stack, formed on the first lower semiconductor stack, including a second sub-sidewall; and a first sidewall, including the first sub-sidewall and the second sub-sidewall; wherein the first lower semiconductor stack includes a first upper surface not covered by the first upper semiconductor stack; the second light-emitting unit includes: a second lower semiconductor stack; a second upper semiconductor stack formed on the second lower semiconductor stack; wherein the second lower semiconductor stack includes a second upper surface not covered by the second upper semiconductor stack; a connecting electrode, formed on the first light-emitting unit and the second light-emitting unit and contacting the second upper surface to electrically connect the first light-emitting unit and the second light-emitting unit; and a first contact electrode, formed on the first upper surface and electrically connected to the first lower semiconductor stack, including a fist contact pad; wherein: the first sub-sidewall and the second sub-sidewall are directly connected to form a first slope; and in a top view, the second upper surface surrounds the second upper semiconductor stack.

A light emitting element includes: a semiconductor stack structure including: a first p-type semiconductor layer, a first active layer disposed on the first p-type semiconductor layer, a first n-type semiconductor layer disposed on the first active layer, an intermediate layer disposed on the first n-type semiconductor layer, a second p-type semiconductor layer disposed on the intermediate layer, a second active layer disposed on the second p-type semiconductor layer, and a second n-type semiconductor layer disposed on the second active layer, wherein: a plurality of first openings are continuously located in the first p-type semiconductor layer, the first active layer, and the first n-type semiconductor layer, and a plurality of second openings are continuously located in the first p-type semiconductor layer, the first active layer, the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, the second active layer, and the second n-type semiconductor layer.

Chiplets containing micro-LEDs are designed with two sets of interconnects. One set connects the cathode and anode terminals on the micro-LEDs to contacts for the chiplet. These contacts may then be connected to circuitry outside the chiplet. The other set connects micro-LED terminals to test pads on the wafer when the chiplets are still in wafer form. Multiple chiplets are connected to individual test pads. The micro-LEDs may be fabricated as an array on the wafer, with the test pads arranged around the periphery of the array. As a result, automated test equipment may probe the test pads to test the chiplets while they are still in wafer form.

A light-emitting substrate includes a first conductive coil, a light-emitting unit and a control circuit. The first conductive coil has a first end and a second end. The first conductive coil is coupled to an external coil, so that the first conductive coil generates a first power signal. The light-emitting unit includes a first electrode and a second electrode. The second electrode of the light-emitting unit is electrically connected to the first end of the first conductive coil. A control terminal of the control circuit is electrically connected to the second end of the first conductive coil, an input terminal of the control circuit is electrically connected to a first power terminal, and an output terminal of the control circuit is electrically connected to the first electrode of the light-emitting unit. The first voltage signal provided by the first power terminal is a direct current voltage signal.

A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.

A light-emitting device includes a substrate; a frame disposed on an upper surface of the substrate; a first light-emitting element disposed on the upper surface of the substrate and within a first region along an inner periphery of the frame; a second light-emitting element disposed on the upper surface of the substrate and within a second region surrounded by the first region; a wall part disposed on the upper surface of the substrate, contacting the frame, and extending from the inner periphery of the frame toward the second region; a wavelength conversion member disposed on the upper surface of the substrate and within a region surrounded by the frame, and covering the wall part, the first light-emitting element, and the second light-emitting element; and a circuit including a first drive circuit that drives the first light-emitting element and a second drive circuit that drives the second light-emitting element.

A semiconductor light emission element includes: a substrate having insulating or semi-insulating properties; a light-emitting functional layer where a first semiconductor layer having a first polarity, a light emission layer, and a second semiconductor layer having a second polarity are sequentially laminated on the substrate; an insulating film covering the light-emitting functional layer; a first pad electrode and a second pad electrode electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, and at least one intermediate pad electrically insulated from the light-emitting functional layer, the first, second, and at least one intermediate pads being provided on the insulating film; and a pad separation groove separating each of the first pad electrode, the second pad electrode, and the intermediate pad, and exposing the insulating film.

There is provided a display device including a film including a layer that selectively reflects at least a part of light in a wavelength range of 380 nm to 780 nm to exhibit a structural color, and a micro LED display.