The present application discloses a display chip and a method for manufacturing the same belonging to the technical filed of semiconductor. The display chip includes: a pixel unit, the pixel unit includes a first semiconductor layer, a quantum well light-emitting layer and a second semiconductor layer which are sequentially disposed; one of the first semiconductor layer and the second semiconductor layer is a n-type semiconductor layer, and the other one is a p-type semiconductor layer; wherein a cross-sectional area of the pixel unit is gradually increased in a light emitting direction of the display chip.

Exemplary systems, methods, and apparatuses are provided for generating at least one periodically poled layered compound. Exemplary systems, methods, and apparatuses according to an exemplary embodiment of the present disclosure can include patterning a plurality of slabs of layered compounds and stacking the plurality of slabs with each slab twisted relative to each adjacent slab.

Disclosed are an LED having a multi-series junction structure and improved light characteristics and a method of manufacturing the same. An LED includes a substrate, a buffer layer deposited on the substrate, a first n type semiconductor layer, a first active layer, and a first p type semiconductor layer sequentially deposited on the buffer layer, a tunnel junction layer deposited on the p type semiconductor layer, a second n type semiconductor layer, a second active layer, and a second p type semiconductor layer sequentially deposited on the tunnel junction layer, ITO formed on the second p type semiconductor layer, and a passivation layer deposited on the side or front of the first n type semiconductor layer to the ITO. Etching is performed from the ITO to one location of the first n type semiconductor layer so that the ITO to the first n type semiconductor layer have a mesa structure.

A method for producing a light emitting element, includes: forming, over a substrate, an n-type layer; forming, over the n-type layer, a first active layer; forming, over the first active layer, a first intermediate layer; forming, over the first intermediate layer, a second active layer having a band gap energy different from the first active layer; forming a first groove having a depth reaching the first intermediate layer from a side of the second active layer; forming a p-type layer containing a p-type Group III nitride semiconductor over the second active layer, over a bottom surface of the first groove, and over a side surface of the first groove; and etching the p-type layer in a vicinity of a region that connects a region over the second active layer and a region over the bottom surface of the first groove to form a first recessed portion.

A light-emitting semiconductor structure includes a substrate, an anode electrode, an epitaxial structure, a gate electrode, and a cathode electrode. The anode electrode is disposed on a lower surface of the substrate. The epitaxial structure is disposed on an upper surface of the substrate. The epitaxial structure includes a first P-type semiconductor layer, a first N-type semiconductor layer, a second P-type semiconductor layer, a second N-type semiconductor layer and a light-emitting layer. The first P-type semiconductor layer is disposed on the upper surface of the substrate. The first N-type semiconductor layer is disposed on the first P-type semiconductor layer. The second P-type semiconductor layer is disposed on the first N-type semiconductor layer. The second N-type semiconductor layer is disposed on the second P-type semiconductor layer. The light-emitting layer is disposed between the second P-type semiconductor layer and the second N-type semiconductor layer.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.

The present invention relates to a method for manufacturing a semiconductor light-emitting device having color conversion technology applied thereto, wherein color conversion technology has been applied to one epitaxial die in which only one of two electrodes is exposed to the outside and which emits blue or ultraviolet rays, enabling the manufacture of a semiconductor light-emitting device emitting each of blue, green, and red light.

Proposed is a method of measuring micro LED electroluminescence by using a photoelectric effect, having the following effects: a micro LED epitaxy wafer and a micro LED verification substrate are included and allowed to be connected to each other in parallel when the micro LED epitaxy wafer and the micro LED verification substrate come into contact; electric power is indirectly applied by using the photoelectric effect, so as to enable measurement of the electroluminescence (EL) at high speed; a way of applying voltage by using the photoelectric effect requires photon energy to be smaller than a bandgap of a target LED material and to be larger than bandgap energy of a material for the micro LED verification substrate; and the micro LED verification substrate is composed of a material for generating the photoelectric effect, so as to enable maximally increasing the effectiveness of the electroluminescence measurement using the photoelectric effect.

A light emitting diode includes a first type semiconductor pattern disposed over a substrate, an active pattern disposed over the first type semiconductor pattern, a second type semiconductor pattern disposed over the active pattern, an ion implantation region and a plurality of electrodes. A polarity of the first type semiconductor pattern is opposite to a polarity of the second type of the second type semiconductor pattern. The ion implantation region at least surrounds and encapsulates a side wall of the second type semiconductor pattern. The electrodes are disposed over the first type semiconductor pattern and the second type semiconductor pattern respectively and separated from one another.