A micro LED display device includes a circuit substrate, an epitaxial structure layer and a metal reflective layer. The circuit substrate includes a display area and a non-display area adjacent to the display area. The epitaxial structure layer includes a first surface facing the circuit substrate, a second surface away from the circuit substrate, and a plurality of ion implantation regions facing the circuit substrate. The ion implantation regions define a plurality of micro LED units spaced apart from each other. The first surface is a planar surface within the display area, and each groove in the second surface corresponds to one of the ion implantation regions. The metal reflective layer includes a plurality of reflective portions corresponding to the grooves. The reflective portions define a plurality of light transmission regions, and each light transmission region corresponds to one of the micro LED units.

A semi-continuous quantum well micro-LED array unit is disclosed. This unit includes a first block of LED pixels comprising a first LED pixel and a second LED pixel. The first and second LED pixels share a first common active region. The unit also includes a second block of LED pixels comprising a third LED pixel and a fourth LED pixel. These LED pixels share a second common active region that is isolated from the first common active region, such that the second common active region is continuously shared by the third and fourth LED pixels. The first block of LED pixels is located proximately to the second block of LED pixels. As a result of the second common active region being isolated from the first common active region, the first block of LED pixels is discrete relative to the second block of LED pixels.

One or more embodiments relate to a light-emitting diode including at least one three-dimensional structure including: a first part having a first conductivity, a second part having a second conductivity, an active region configured to emit a light radiation, interposed between the first part and the second part, the diode also including: a first electrical contact configured to inject carriers into the first part, a second electrical contact configured to inject carriers into the second part. The diode includes a deceleration layer interposed between the first contact and the first part, configured to decelerate the carriers obtained from the first contact before being injected into the first part.

A display device including a display area and a non-display area formed around the display area comprises a substrate, a pixel circuit layer disposed on the substrate, and including a plurality of sub-pixel circuits disposed in the display area, a plurality of first conductive connectors disposed on the pixel circuit layer, and a display element layer disposed on the first conductive connectors. The display element layer may include a plurality of light emitting elements disposed in the display area, electrically connected to the sub-pixel circuits through the first conductive connectors disposed in the display area and configured to emit light in response to signals applied from the sub-pixel circuits, and a plurality of dummy light emitting elements disposed in the non-display area. The light emitting elements and the dummy light emitting elements may include a same material.

A method of manufacturing a light-emitting diode device comprises fabricating a light-emitting diode structure comprising an inorganic semiconductor; and fabricating an optic over the light-emitting diode structure using nano-imprint lithography. The method may further comprise, before fabricating the optic, forming a first lens on the light-emitting diode structure by thermal reflow lithography. The optic and first lens may improve the efficiency of the light-emitting diode device by reducing losses due to total internal reflection. Also provided are light emitting diode devices obtainable by the method.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding at least a side surface of the active layer. The first semiconductor layer has a diameter in a range of about 0.5 m to about 10 m, and the light emitting element has an external quantum efficiency greater than or equal to about 23%.

Disclosed are a method of manufacturing a display apparatus and a display apparatus manufactured thereby, wherein the method of manufacturing the display apparatus includes a step of forming a T-shaped light-emitting rod including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a step of laying and aligning the T-shaped light-emitting rod on a control substrate in a lateral direction (), and a step of forming a first electrode connected to the first conductive semiconductor layer of the aligned T-shaped light-emitting rod, forming a second electrode connected to the second conductive semiconductor layer, and connecting the first electrode and the second electrode to contact electrodes on the control substrate, respectively.

Disclosed are a method of manufacturing a light-emitting apparatus and a light-emitting apparatus manufactured thereby, wherein the method includes a step of forming a T-shaped light-emitting rod, a step of forming a sacrificial layer on a support substrate and forming an insulating layer on the sacrificial layer, a step of forming a coupling recess in the insulating layer, coupling the T-shaped light-emitting rod to the coupling recess, and laying and aligning the T-shaped light-emitting rod on the support substrate in a lateral direction (), a step of forming a first electrode and forming a second electrode connected to the second conductive semiconductor layer to form a T-shaped light-emitting rod structure, a step of transferring the T-shaped light-emitting rod structure to a target substrate, and a step of removing the sacrificial layer and removing the support substrate.

A light emitting element includes a first semiconductor layer doped with an N-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a P-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and a multilayer insulating film surrounding at least an outer surface of the active layer and including two or more layers, wherein any one insulating film of the multilayer insulating film that is in contact with at least the outer surface of the active layer has a carbon content of about 3% to about 30%.

A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.