A light emitting diode (LED) module includes a substrate, the substrate includes a light emitting region, the light emitting region includes a plurality of light emitting sub-regions, and a first light emitting sub-region and a second light emitting sub-region are provided symmetrically about a symmetry axis to form a group of symmetric light emitting regions; or the light emitting region includes a first light emitting region and a second light emitting region, and the first light emitting region and the second light emitting region are provided symmetrically about a symmetry axis; an LED array, provided within the light emitting region.

The invention relates to a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide perovskite quantum dots, products and applications thereof, which belongs to the technical field of modification research of perovskite quantum dots. The invention discloses a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide (CsPbBr.sub.3) perovskite quantum dots, which adopts lead bromide (PbBr.sub.2), oleic acid (OA), oleylamine (OAm), sodium ion precursors and copper ion precursors for the reaction preparation in octadecene (ODE), in which copper ions (Cu.sup.2+) and sodium ions (Na.sup.+) substitute A and B crystal sites in cesium lead bromide (CsPbBr.sub.3) perovskite fluorescent quantum dots respectively. The quantum dots have been effectively improved in photoluminescence quantum yield, thermal stability, etc., and can be used as an active layer to fabricate light emitting diodes which achieve the tuning of emission color from green to blue.

An embodiment relates to a method for forming by defocused lithography a stack including a photosensitive layer based on a photosensitive resin having scattering particles. The stack further includes at least one pattern defined at least partly by a curved lateral wall so that an intersection of the curved wall with a plane substantially perpendicular to the plane of main extension of the stack forms a curved line. An embodiment also relates to the creation of an optoelectronic device including the stack, wherein the at least one pattern is at least one cavity at least partly defined by the curved lateral wall, and at least one light-emitting diode disposed in the at least one cavity.

A method for manufacturing a light-emitting device includes: preparing an intermediate body including: a substrate, and a plurality of light-emitting elements disposed on the substrate, each including a first surface serving as a light extraction surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface; applying a powder composition including a reflective member and a silicone resin powder from above the first surfaces of the plurality of light-emitting elements through a sieve to locate the powder composition on the substrate and between the lateral surfaces of the plurality of light-emitting elements; and forming a first covering member by applying vibration to the powder composition and subsequently applying pressure in a thickness direction of the substrate to perform compression molding.

A method for manufacturing a light-emitting device includes: preparing an intermediate body including: a substrate, and a plurality of light-emitting elements disposed on the substrate, each including a first surface serving as a light extraction surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface; applying a powder composition including a reflective member and a silicone resin powder from above the first surfaces of the plurality of light-emitting elements through a sieve to locate the powder composition on the substrate and between the lateral surfaces of the plurality of light-emitting elements; and forming a first covering member by applying vibration to the powder composition and subsequently applying pressure in a thickness direction of the substrate to perform compression molding.

A light emitting apparatus includes: a circuit board; a plurality of light emitting devices connected to the circuit board; and a reflective sheet that reflects light emitted from the plurality of light emitting devices and includes a plurality of reflective cells which respectively accommodate the plurality of light emitting devices. The plurality of reflective cells include a plurality of low-reflection patterns. The plurality of low-reflection patterns include a pattern disposed closer to an edge of the reflective sheet, size of which is relatively smaller than size of other patterns.

A display device and a method for manufacturing the same are provided. A light-emitting element includes semiconductor layers including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer, and defining at least one concave groove that is concave downwardly from one surface of the first semiconductor layer, a first protective layer on side surfaces of the semiconductor layers, on a top surface of the first semiconductor layer, and on inner surfaces of the semiconductor layers and on the third semiconductor layer in the concave groove, and a wavelength conversion layer containing wavelength conversion particles in the concave groove.

A display module includes a substrate; an anisotropic conductive film on one side of the substrate; a plurality of light-emitting diodes connected to the substrate via the anisotropic conductive film; and a color conversion layer on the plurality of light-emitting diodes and configured to be excited by a light having a first wavelength emitted from the plurality of light-emitting diodes and emit a light of a second wavelength that is different from the first wavelength. The anisotropic conductive film includes: an insulating adhesive layer adhering to the one side of the substrate; a plurality of conductors within the insulating adhesive layer and configured to electrically connect the plurality of light-emitting diodes to the substrate; and a plurality of reflectors within the insulating adhesive layer and having a size less than a size of the plurality of conductors.

The present application relates to a quantum dot ink, a quantum dot layer patterning method, and a quantum dot optoelectronic device. The quantum dot ink contains a quantum dot material; a cross-linking agent and a photoacid generator, wherein the quantum dot material comprises quantum dots and an organic ligand on surfaces of the quantum dots, the organic ligand comprises a crosslinking unit and a coordination functional group coordinated with the quantum dots, the crosslinking unit in the organic ligand can be subjected to a cross-linking reaction with a polyhydroxy compound cross-linking agent under the catalysis of hydrogen ions generated via the photoacid generator under ultraviolet irradiation. By means of the quantum dot ink, since photocrosslinking molecules directly participate in patterning of a quantum dot layer, there is no need to wash away a photoresist sacrificial layer compared to existing photoresist patterning methods, so that the process flow is greatly simplified.

A display device includes a first substrate, a light-emitting unit disposed on the first substrate, an intermediate layer on the light-emitting unit, and a color filter layer on the intermediate layer. The intermediate layer has a first refractive index n1, the color filter layer has a second refractive index n2, and the first refractive index n1 is less than the second refractive index n2.