Patent classifications
H10H29/851
DISPLAY DEVICE
A display device is provided in the disclosure. The display device includes a first flexible substrate, a second flexible substrate, a display unit, a color conversion layer, a support layer, a first adhesive layer, a protective layer and a second adhesive layer. The second flexible substrate is disposed opposite to the first flexible substrate. The display unit is disposed between the first flexible substrate and the second flexible substrate. The color conversion layer is disposed between the second flexible substrate and the display unit. The support layer is disposed under the first flexible substrate. The first adhesive layer is disposed between the support layer and the first flexible substrate. The protective layer is disposed on the second flexible substrate. The second adhesive layer is disposed between the second flexible substrate and the protective layer.
MICRO LED DISPLAY AND METHOD FOR MANUFACTURING SAME
A display, in a micro light-emitting diode (LED) display, is provided. The display includes a barrier rib forming a pixel area, a micro LED disposed in the pixel area, a light-blocking portion defining an open area of the pixel area, a quantum dot color converter layer formed in the pixel area, and a color filter layer disposed to correspond to the quantum dot color converter layer, wherein an area of the pixel area is formed larger than an area of the open area, and wherein a first gap between pixel areas adjacent in a first direction is formed narrower than a second gap between pixels adjacent in a second direction that is perpendicular to the first direction.
SEMICONDUCTOR NANOPARTICLE, METHOD OF PRODUCING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME
A semiconductor nanoparticle, a method of producing the nanoparticle, and an electronic device including the same. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, where in the semiconductor nanoparticle, a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1, a mole ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1, the semiconductor nanoparticle is configured to emit light, and a full width at half maximum of a luminescent spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.
LIGHT-EMITTING DEVICE
A light-emitting device includes a substrate; light-emitting elements on an upper surface of the substrate, the light-emitting elements configured to be individually driven; a first wavelength conversion portion covering at least a portion of at least one of the light-emitting elements; a second wavelength conversion portion covering a part of the first wavelength conversion portion; and a diffusion portion covering the first and second wavelength conversion portions. In a cross-sectional view, the light-emitting device includes a first region in which the diffusion portion is arranged above the first wavelength conversion portion without the second wavelength conversion portion between them, and a second region in which the second wavelength conversion portion and the diffusion portion are sequentially arranged on the first wavelength conversion portion. A color temperature of light extracted from the second region is lower than a color temperature of light extracted from the first region.
OPTOELECTRONIC DEVICE
The present disclosure provides an optoelectronic device including a base, a light-emitting chip, an interposer, a wavelength conversion member and a wall portion. The base includes a base portion and a conductive portion, and the conductive portion comprises a plurality of coupling surfaces. The base portion covers the conductive portion and exposes the coupling surfaces. The light-emitting chip and the interposer are provided on the base, and having a top surface. The interposer covers the light-emitting chip and exposes the top surface. The wavelength conversion member covers the light-emitting chip and the interposer, and the wavelength conversion member includes an emitting surface. The wall portion is provided on the base. The wall portion covers the interposer and the wavelength conversion member, and exposes the emitting surface of the wavelength conversion member. The emitting surface is parallel to the top surface, and perpendicular to the coupling surfaces.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device is disclosed that includes a substrate, a bank layer disposed on the substrate, and a reflective layer disposed on a side surface of the bank layer and in contact with a light-transmitting layer, a second color quantum dot layer or a third color quantum dot layer, wherein the bank layer and the reflective layer together have a length of 1 m or less in a direction parallel to the substrate.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device is disclosed that includes a substrate, a bank layer disposed on the substrate, and a reflective layer disposed on a side surface of the bank layer and in contact with a light-transmitting layer, a second color quantum dot layer or a third color quantum dot layer, wherein the bank layer and the reflective layer together have a length of 1 m or less in a direction parallel to the substrate.
NEAR-INFRARED LIGHT EMITTING DEVICE AND METHOD FOR ADJUSTING INTENSITY RATIO OF NEAR-INFRARED RAY AND VISIBLE RAY
Provided is a near-infrared light emitting device including a solid-state light emitting element that emits blue primary light, a wavelength converter that converts the primary light into near-infrared wavelength-converted light, an organic polymer member through which mixed light of the primary light and the wavelength-converted light is transmitted. The organic polymer member has a thickness of 3 m or more and less than 300 m, a light transmittance of less than 0.1% at a wavelength of 400 nm or less, a light transmittance of less than 1% at or below a wavelength of the emission peak of the primary light, and a light transmittance of less than 30% at a wavelength of 500 nm or less, a light transmittance of 75% or more and less than 100% within a wavelength range of 750 nm or more and less than 1,100 nm.
DISPLAY MODULE COMPRISING COLOR FILTER
A display module includes a substrate and a plurality of pixels on the substrate. Each pixel of the plurality of pixels includes a self-luminescence layer, a first color conversion layer and a second color conversion layer on the self-luminescence layer, a first color filter and a second color filter on the first color conversion layer and the second color conversion layer, a third color filter adjacent to the first color filter and the second color filter, and a size of the third color filter is larger than a size of the first color filter and a size of the second color filter; and partition walls between the first color filter and the second color filter and between the second color filter and the third color filter, and blue dye on the partition walls.
LIGHT EMITTING DEVICES INCLUDING A QUANTUM DOT COLOR CONVERSION MATERIAL AND METHOD OF MAKING THEREOF
A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.