A Micro-LED display chip and a method for manufacturing the same are provided according to the present application. The method includes: providing a driving substrate; providing a first LED layer; bonding the first LED layer to the driving substrate, where the first LED units and a first conductive column are electrically connected to contacts respectively; disposing a second LED layer on the first LED layer, where the second LED layer consists of multiple second LED units and a second filling structure located between the second LED units, the second LED units are electrically connected to the first conductive column directly below them, and the second LED units emit light of a different color from that of the first LED units. This facilitates reducing the process difficulty in manufacturing the multicolor Micro-LED display chips.

The present disclosure discloses a corner protection device for a display screen and a display screen assembly. In the corner protection device, when a locking member slides on a base to be in a locked state, a locking block is inserted into a locking slot, a first protrusion is inserted into a first through hole of a first corner protection plate, and a second protrusion is inserted into a second through hole of a second corner protection plate. The first corner protection plate and the second corner protection plate protrude from a corner of the display screen. When the locking member slides on the base to be in an unlocked state, the first protrusion or the second protrusion drives the locking block to disengage from the locking slot, and the first corner protection plate and the second corner protection plate are received in a corner of the display screen.

Disclosed are a display substrate, driving method and a display device. The display substrate includes: a substrate base including a first display area and a second display area; the plurality of light-emitting devices include a plurality of first light-emitting devices in the first display area and a plurality of second light-emitting devices in the second display area, and the density of the plurality of first light-emitting devices in the first display area is less than or equal to that of the plurality of second light-emitting devices in the second display area; and the plurality of ambient sensors are in the first display area and below at least part of the first light-emitting devices, and the orthographic projections of the ambient sensor on the substrate base covers and is greater than the orthographic projections of the corresponding first light-emitting devices on the substrate base.

A light filtering material including at least one matrix material; and semi-conductive nanoparticles which are dispersed in the matrix material. The light filtering material has: a local maximum absorbance of highest wavelength in the range from 350 to 500 nm, the local maximum has an absorbance value A.sub.max for a wavelength .sub.max; a value of 0.9A.sub.max for a wavelength .sub.0.9, .sub.0.9 being greater than .sub.max; a value of 0.5A.sub.max for a wavelength .sub.0.5, .sub.0.5 being greater than .sub.0.9; and |.sub.0.5.sub.0.9| is less than 15 nm.

A display substrate, including a first substrate and a backplane arranged in a sequentially laminated manner, and a light-emitting layer, where the light-emitting layer includes a binding pads and a light-emitting elements arranged one-to-one corresponding to each other, where the binding pad is arranged on a side of the backplane away from the first substrate, and a pin of the light-emitting element is electrically connected to the binding pad, where the binding pad includes a first region and a second region, the orthographic projection of the first region on the backplane is covered by the orthographic projection of the light-emitting element on the backplane, and the orthographic projection of the second region on the backplane is arranged on the outer side of the orthographic projection of the light-emitting element on the backplane.

In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.

The display device includes at least one semiconductor light emitting device, a first color conversion pattern, a second color conversion pattern, and a light transmitting pattern. At least one semiconductor light emitting device is arranged on each of the first sub-pixel, the second sub-pixel, and the third sub-pixel. The first color conversion pattern is arranged on at least one semiconductor device corresponding to the first sub-pixel and includes first color conversion particles. The second color conversion pattern is arranged on at least one semiconductor device corresponding to the second sub-pixel and includes second color conversion particles. The light transmitting pattern is arranged on at least one semiconductor device corresponding to the third sub-pixel. The area of the first color conversion pattern, the area of the second color conversion pattern, and the area of the light transmitting pattern are different.

A chip structure includes a chip wafer unit and a color conversion substrate unit disposed on a light-exit side of the chip wafer unit. The chip wafer unit includes a light-emitting layer and an electrode layer sequentially stacked in a first direction. The light-emitting layer includes light-emitting portions. Each light-emitting portion includes at least two light-emitting sub-portions. The electrode layer includes a cathode, connection electrodes, and anodes in one-to-one correspondence with the light-emitting portions. The at least two light-emitting sub-portions are sequentially connected through at least one connection electrode. Among the at least two light-emitting sub-portions sequentially connected, a first one light-emitting sub-portion is a first selected light-emitting sub-portion, and a last one light-emitting sub-portion is a second selected light-emitting sub-portion. The first selected light-emitting sub-portion is connected to the cathode, and the second selected light-emitting sub-portion is connected to an anode.

In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component has a semiconductor body with an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face. The arrangement further includes an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components and is absorbent or reflective of the electromagnetic radiation.

A driving backplane includes a substrate, a plurality of pad groups, and a plurality of marks. The plurality of pad groups and the plurality of marks are located on a same side of the substrate, a pad group includes at least one pad, and orthogonal projections of the plurality of marks on the substrate and orthogonal projections of the plurality of pad groups on the substrate have no overlap. The pad group corresponds to at least one mark. An orthogonal projection of the at least one mark on the substrate is located on a circumference of an orthogonal projection of a corresponding area of the pad group on the substrate, is adjacent to an orthogonal projection of the pad group on the substrate, and has a first gap from the orthogonal projection of the pad group on the substrate.