A semiconductor light-emitting element package may include a semiconductor substrate having a first region and a second region, a first semiconductor light-emitting element on the first region of the semiconductor substrate, a pair of assembling wirings on the second region of the semiconductor substrate, and a second semiconductor light-emitting element and a third semiconductor light-emitting element on the pair of assembling wirings.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

A display device is disclosed. The display device may include a substrate including a display area in which a plurality of pixels are provided and a pad area at one side of the display area, a circuit board electrically connected to each of the plurality of pixels, spaced and/or apart (e.g., spaced apart or separated) from the substrate in a first direction, and including a first ground portion and a second ground portion each in both sides (e.g., two opposing sides), and a cover member extending from an upper portion of the circuit board to a lower portion of the circuit board, and including a first contact portion which is bent toward the first ground portion and connected to the first ground portion and a second contact portion which is bent toward the second ground portion and connected to the second ground portion.

A matrix LED display includes a plurality of LED chips disposed in a matrix on an interconnect substrate provided with a plurality of common interconnects extending in a first direction and a plurality of segment interconnects extending in a second direction orthogonal to the first direction. Each of the LED chips is configured by a pn junction in which p-type and n-type semiconductor layers are joined in a vertical structure, and includes a p-type electrode and an n-type electrode. Each of the common interconnects is disposed to pass through the LED chips disposed in the same row, and is connected to an n-type electrode of each of the LED chips. Each of the segment interconnects is disposed to pass through the LED chips disposed in the same column, and is connected to a p-type electrode of each of the LED chips.

According to an embodiment of the disclosure, a display device, a resin composition, a method of manufacturing the display device, and an electronic device comprising the display device are provided. The display device includes a base layer, a conductive layer on the base layer, a via layer covering the conductive layer, an electrode layer disposed on the via layer and including a first electrode and a second electrode spaced apart from each other by a separation distance, and a light-emitting element between the first electrode and the second electrode. The conductive layer may be overlapped with the electrode layer in an overlapping area in a plane view. The via layer may have a medium thickness, which is equal to or more than 2 m, in the overlapping area. The separation distance may be equal to or more than 3.0 m.

An optoelectronic package structure includes at least one optoelectronic device, a lead frame, and an encapsulant. The optoelectronic device is disposed on the lead frame. The lead frame includes at least one lead unit that includes a first lead and a second lead. The first lead has a first bonding part and a first pin. The first bonding part has a first inclined sidewall at an upper end of one side away from the second lead. The second lead has a second pin and a carrying part, of which an upper end has a die-attaching region for carrying the optoelectronic device. The encapsulant covers at least the optoelectronic device, the first bonding part, and the carrying part.

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

A semiconductor structure includes packaging structures and a substrate. Each packaging structure includes a light-transmitting layer, micro-LED chips, a first insulating layer, redistribution layers, a second insulating layer, and conductive pieces. The micro-LED chips are on the light-transmitting layer and include an electrode surface and a light-emitting surface facing the light-transmitting layer. The first insulating layer is disposed on the light-transmitting layer and surrounds the micro-LED chips. The redistribution layers are disposed on the first insulating layer and pass through the first insulating layer to be electrically connected to the electrode surfaces. The second insulating layer is disposed on the first insulating layer. The conductive pieces are disposed on the second insulating layer, pass through the second insulating layer to be electrically connected to the redistribution layers, and are between the substrate and the micro-LED chips.

A display device a method for manufacturing the same and the electronic device are provided. The display device includes a substrate, connection electrodes above the substrate, light-emitting elements respectively above the connection electrodes, and including a semiconductor stack including a first semiconductor layer, an active layer, and a second semiconductor layer, an etch-stop layer above the semiconductor stack, and an insulating layer surrounding a side surface of the semiconductor stack in plan view, and having one end substantially level with a top surface of the etch-stop layer, and a common electrode above the light-emitting elements.

A semiconductor structure, a semiconductor unit, and a formation method thereof are provided. The semiconductor structure includes a underlying layer, a supporting member, and a semiconductor device. The underlying layer has a protruding portion. The supporting member is disposed on the underlying layer. The supporting member includes a bonding portion, a connecting portion, and a carrying portion. The bonding portion is connecting to the protruding portion of the underlying layer. The connecting portion is located next to the bonding portion. The carrying portion is located next to the connecting portion. The semiconductor device is disposed on the carrying portion and exposes the bonding portion and the connecting portion. There is a gap between the carrying portion of the supporting member and the underlying layer.