A semiconductor device is provided. The semiconductor device includes a semiconductor structure, an outer electrode structure, an inner electrode structure, and an adjustment structure. The semiconductor structure includes a first portion and a second portion, wherein the second portion is on the first portion and includes an active region. The outer electrode structure is on the first portion of the semiconductor structure and has a first top surface. The inner electrode structure is on the second portion of the semiconductor structure and has a second top surface. The adjustment structure covers the semiconductor structure and is in contact with the outer electrode structure and the inner electrode structure, and the adjustment structure has a third top surface. The third top surface is substantially coplanar with either the first top surface, the second top surface, or both.

Provided is a ultra-small light-emitting diode (LED) electrode assembly including a base substrate; an electrode line formed on the base substrate, and including a first electrode and a second electrode formed in a line shape to be interdigitated with each other while being spaced apart from each other; and at least one ultra-small LED device connected to the electrode line. A cross section of at least one of the first and second electrodes in a vertical direction has a height variation such that the first and second electrodes easily come in contact with the at least one ultra-small LED device.

The present disclosure provides a light-emitting chip, a light-emitting device and a display apparatus. The light-emitting chip includes a pixel circuit layer, a light-emitting unit group located on a side of the pixel circuit layer, and a plurality of conductive pads located on a side of the pixel circuit layer facing away from the light-emitting unit. The pixel circuit layer includes at least a part of the structure of the pixel circuit and a plurality of signal lines. The light-emitting unit group includes at least one light-emitting unit, the light-emitting unit is electrically connected with the pixel circuit. One of the conductive pads is electrically connected with one of the signal lines. The light-emitting device includes the plurality of light-emitting chips and the second drive circuit, the plurality of conductive pads are connected with the second drive circuit. The display apparatus includes a light-emitting device.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.

A display panel includes an integrated circuit substrate, a light-emitting device layer and a second electrode. The light-emitting device layer includes light-emitting devices disposed respectively in light-emitting areas and insulating layers disposed respectively in insulating barrier areas, and each insulating barrier area is disposed between two adjacent light-emitting areas. Each insulating layer has opposite ends respectively connected to the second electrode and the integrated circuit substrate and each light-emitting device is surrounded by several insulating layers, so that the several insulating layers, the second electrode and the integrated circuit substrate together form a closed accommodating chamber for accommodating the light-emitting device.

A light-emitting diode module includes a casing, a lead frame, a plurality of light-emitting diodes, a control circuit, a first external power supply, a second external power supply, a first power supply pin, and a second power supply pin. The lead frame is disposed in the casing, and the lead frame has a first surface and a second surface. The second surface is opposite to the first surface. The light-emitting diodes include a first light-emitting diode, a second light-emitting diode and a third light-emitting diode, which are disposed on the first surface of the lead frame. At least one of the first light-emitting diode, the second light-emitting diode and the third light-emitting diode is electrically connected to the first external power supply through the first power supply pin, and the control circuit is electrically connected to the second external power supply through the second power supply pin.

The present disclosure provides a wiring substrate, a method manufacturing the same, and an electronic device. The wiring substrate includes a base substrate, a plurality of pad groups on the base substrate, each pad group including at least two pads. Two pads adjacent in a first direction or a second direction of the at least two pads are spaced apart. Each pad includes a plurality of sides including at least one selected side and at least one non-selected side, any one pad is adjacent to another pad along the first direction or the second direction, the selected side of the any one pad is a side facing the adjacent another pad, and a distance between the selected side of the any one pad facing the adjacent another pad and the selected side of the adjacent another pad facing the any one pad is 30 m and <100 m.

A light-emitting unit and a light-emitting device are provided. The light-emitting unit includes a light-emitting chip and an optical encapsulant. The light-emitting unit has a top surface and a bottom surface opposite to each other in the thickness direction, and a surrounding side surface. The top surface and the bottom surface are surrounded by the surrounding side surface, and the light-emitting chip includes a connection pad located on the bottom surface and a wire bonding point that is located on the top surface. The surrounding side surface of the light-emitting chip is surrounded by the optical encapsulant, and the top surface and the bottom surface of the light-emitting chip are exposed outside of the optical encapsulant.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength Ac shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

A display device may include a plurality of light emitting elements on a substrate and arranged in a matrix form along a first arrangement direction and a second arrangement direction crossing the first arrangement direction, and a first sub pixel area and a second sub pixel area each overlapping at least a portion of the plurality of light emitting elements, spaced from each other in a first direction, and extending in a second direction crossing the first direction. The second direction and the first arrangement direction may be non-parallel to each other.