An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

A printed circuit board (PCB) assembly may include a PCB comprising a base layer, an electrical layout layer, and a dielectric located between the base layer and the electrical layout layer. The electrical layout layer may include a plurality of electrical pads and a plurality of electrical traces. The PCB assembly may include an emitter assembly comprising a plurality of emitters configured to emit light. The plurality of emitters may be mounted to the PCB and electrically connected to the electrical pads via respective wind bonds. The PCB assembly may include drive circuitry configured to control power delivered to the plurality of emitters. The drive circuitry may be mounted to the PCB and electrically connected to the electrical pads via respective solder connections. The PCB assembly may include communication circuitry configured to cause the drive circuitry to control the emitters in response to messages received via wireless signals.

A strip-shaped light-emitting diode (LED) and an application device are provided. The strip-shaped LED includes a substrate, a plurality of LED chips, a plurality of electrical connection wires connected to electrodes of the LED chips, and a packaging colloid. The plurality of LED chips are linearly arranged, covered by the packaging colloid, and the packaging colloid has a horizontal fine trench between two specified adjacent LED chips. Reliability of resistance to cold and hot temperature cycles or cold and hot shocks can be improved.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength .sub.c shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

The reliability of a display device improves. The present disclosure is to form a connection pad not from a simple metal film but from an insulating film that becomes conductive when pressure is applied.

A display device includes a first LED chip arranged in a pixel, a first mounting pad arranged in the pixel and connected to the first LED chip, a second mounting pad arranged in the pixel, overlapping the first mounting pad in a plan view and electrically connected to the second mounting pad, and an insulating layer between the first mounting pad and the second mounting pad.

A light-emitting device includes an insulating substrate having one or more first cutouts and one or more second cutouts provided on opposite side surfaces thereof. First and second wiring electrodes, which are separated from each other, correspond respectively to the first and second cutouts. The first and second wiring electrodes each cover a region that extends over an edge of the corresponding cutout on an upper surface of the substrate and a region that extends over an edge the corresponding cutout on a lower surface of the substrate from an internal surface of the cutout. First and second resin films cover surfaces the first and second wiring electrodes in regions that extend over edges along the first and second cutouts in a top view. A light-emitting element is placed on the substrate to allow power to be supplied by the first wiring electrode and the second wiring electrode.

An inventive light-emitting array includes multiple semiconductor light-emitting diodes (LEDs). Each LED of the array includes first and second doped semiconductor layers and an active layer them, and emits light at a nominal emission vacuum wavelength .sub.0 resulting from charge carrier recombination at the active layer. The active layer differs in chemical composition from the first and second semiconductor layers and is between 0.1 nm thick and 1 nm thick. Each LED exhibits a small-signal bandwidth greater than 0.10 GHZ, in some instances at a nonzero current density less than 2000 A/cm.sup.2. In some instances the doped semiconductor layers can be p-doped and n-doped GaN layers, and the active layer can be a monolayer of a III-nitride compound, e.g., InGaN.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.