A vapor cell comprises: a main glass body section comprising wall(s) surrounding a cavity, the wall(s) having first interior surface(s) having first glass structures extending into and/or away from the cavity; a top glass lid positioned on top of and attached to the main glass body section, the top glass lid having second interior surface(s) having second glass structures extending into and/or away from the cavity; a bottom glass lid positioned below and attached to the main glass body section, the bottom glass lid having third interior surface(s) having third glass structures extending into and/or away from the cavity; and wherein the first glass structures, the second glass structures, and the third glass structures are configured to tune an index of refraction of the vapor cell to reduce RF signal scattering within the vapor cell.

An electronic system includes a radar antenna, configured to emit electromagnetic radiation having a wavelength in a first direction. The electronic system also includes an electric device. The electric device is arranged in an emission direction of the radar antenna. The electric device includes a dielectric layer and a metal wiring for contacting elements of the electric device. A thickness of the dielectric layer measured in the first direction is determined so that the emitted electromagnetic radiation forms at least one standing wave having at least one minimum of electric field intensity within the dielectric layer. The metal wiring is arranged in a horizontal layer of the dielectric layer. A position, in the first direction, of the metal wiring is determined so that it corresponds to a minimum of the electric field strength of electromagnetic radiation having the wavelength .

An electronic system includes a radar antenna, configured to emit electromagnetic radiation having a wavelength in a first direction. The electronic system also includes an electric device. The electric device is arranged in an emission direction of the radar antenna. The electric device includes a dielectric layer and a metal wiring for contacting elements of the electric device. A thickness of the dielectric layer measured in the first direction is determined so that the emitted electromagnetic radiation forms at least one standing wave having at least one minimum of electric field intensity within the dielectric layer. The metal wiring is arranged in a horizontal layer of the dielectric layer. A position, in the first direction, of the metal wiring is determined so that it corresponds to a minimum of the electric field strength of electromagnetic radiation having the wavelength .

The electronic device may include a camera module and an optical module. The optical module may comprise: a substrate; a plurality of light-emitting elements disposed on the substrate; and a first light-receiving element disposed on the substrate and configured to operate independently from the plurality of light-emitting elements.

The electronic device may include a camera module and an optical module. The optical module may comprise: a substrate; a plurality of light-emitting elements disposed on the substrate; and a first light-receiving element disposed on the substrate and configured to operate independently from the plurality of light-emitting elements.

Devices and methods for analyzing polymer arrays formed on integrated surfaces of microLEDs. One microarray includes a plurality of individually controllable microLED elements, a plurality of photodetector elements, an integrated surface, and a CMOS driver chip. Each microLED element is paired with a photodetector element. The CMOS driver chip controls activation of the microLED elements and the photodetector elements.

An optical sensor package includes a light-emitting unit disposed on a package substrate and configured to emit first light toward a target, a light-receiving unit disposed on the package substrate and configured to receive second light obtained when the first light is reflected from the target, and a molding member formed on the package substrate to surround a top surface of an exposed portion of the package substrate, the light-emitting unit, and the light-receiving unit, the molding member including a groove formed in a thickness direction between the light-emitting unit and the light-receiving unit, wherein the groove is filled with an opaque material.

An optical sensor package includes a light-emitting unit disposed on a package substrate and configured to emit first light toward a target, a light-receiving unit disposed on the package substrate and configured to receive second light obtained when the first light is reflected from the target, and a molding member formed on the package substrate to surround a top surface of an exposed portion of the package substrate, the light-emitting unit, and the light-receiving unit, the molding member including a groove formed in a thickness direction between the light-emitting unit and the light-receiving unit, wherein the groove is filled with an opaque material.

An optoelectronic semiconductor device includes a base, a semiconductor stack and a light-absorbing layer. The semiconductor stack includes a first semiconductor layer on the base, a second semiconductor layer on the first semiconductor layer, and a light absorbing layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The bonding structure is between the first semiconductor layer and the base. The first electrode structure is disposed on and connected to the second semiconductor layer. A thickness of the second semiconductor layer is less than or equal to 50 nm.

An optoelectronic semiconductor device includes a base, a semiconductor stack and a light-absorbing layer. The semiconductor stack includes a first semiconductor layer on the base, a second semiconductor layer on the first semiconductor layer, and a light absorbing layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The bonding structure is between the first semiconductor layer and the base. The first electrode structure is disposed on and connected to the second semiconductor layer. A thickness of the second semiconductor layer is less than or equal to 50 nm.