A light emitting device according to an aspect includes a first stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first light emitting layer, a first insulating layer provided on a side surface of the first stacked body, a first metal layer provided on the first insulating layer and located on a side of the first stacked body, a first electrode provided between the substrate and the first stacked body and electrically coupled to the first semiconductor layer, a second electrode provided on a side of the first stacked body opposite to the first electrode and electrically coupled to the second semiconductor layer, a first transparent layer provided on a side of the second electrode opposite to the first stacked body, a first lens provided on a side of the first transparent layer opposite to the second electrode and overlapping the first light emitting layer in a plan view, and a reflective member made of metal provided on sides of the first lens and the first transparent layer. The reflective member is electrically coupled to the second electrode.

Provided is an anti-reflective film including a protective member, a refractive member disposed on a surface of the protective member, and a shock absorbing member disposed between the protective member and the refractive member. The refractive member includes a first refractive layer and a second refractive layer, the first refractive layer is disposed on the shock absorbing member, and the second refractive layer is disposed on the first refractive layer.

A display module includes: a substrate, a first dielectric layer, a second dielectric layer and a plurality of color filters. The substrate is disposed with a plurality of light-emitting diodes (LEDs) thereon. The LEDs have a non-smooth upper surface. The first dielectric layer is located on the substrate and surrounding the LEDs. The first dielectric layer is filled between the substrate and the second dielectric layer, and a refractive index of the second dielectric layer is greater than a refractive index of the first dielectric layer. The color filters are located on a side of the second dielectric layer opposite to the first dielectric layer.

An electronic device includes: a first substrate; a second substrate disposed adjacent to the first substrate, wherein a tiling gap is between the first substrate and the second substrate; a plurality of light emitting elements respectively disposed on the first substrate and the second substrate; a cover layer disposed on the first substrate and the second substrate and covering the plurality of light emitting elements; and a low transmittance film disposed on the cover layer, wherein the low transmittance film and the tiling gap are overlapped in a normal direction of the electronic device.

A display device includes a substrate including an active area, a non-active area disposed on at least one side surface of the active area, and a bending area disposed between the active area and the non-active area, a plurality of insulating layers disposed on the substrate, a bank disposed on the plurality of insulating layers, at least one micro light emitting diode (LED) disposed on the bank, an optical layer disposed on the plurality of insulating layers, a dam area between the active area and the bending area and a first dam disposed in the dam area, wherein the first dam includes a first dam layer which is formed of the same material as the bank.

A display device includes a complementary metal oxide semiconductor (CMOS) wafer including a display area including unit areas and a boundary area between the unit areas, the display area having a lattice shape and a non-display area adjacent to the display area, light emitting diodes overlapping the unit areas, a flattening layer covering the light emitting diodes, an auxiliary electrode overlapping the boundary area and located in the flattening layer, a common electrode on the flattening layer and connected to the auxiliary electrode and the light emitting diodes, and a passivation layer covering the common electrode, wherein grooves recessed in a direction from an upper surface of the flattening layer toward the light emitting diodes are in the flattening layer overlapping the unit areas.

An electronic device includes a second substrate disposed relative to a first substrate, a first light-emitting unit disposed between the first substrate and the second substrate, a first microstructure on the first surface of the first light-emitting unit and the first surface away from the first substrate, and an adhesive layer disposed between the second substrate and the first surface of the first light-emitting unit. There is a first gap between the adhesive layer and the first microstructure.

A display device includes a substrate, a circuit layer, a first electrode, a pixel defining layer, a first light-emitting layer, a protective layer, a capping layer, and a second electrode. The protective layer includes a first protective layer disposed on the first light-emitting layer and a second protective layer disposed on the first protective layer and having greater etch resistance than the capping layer. The capping layer covers one side of the first light-emitting layer. A portion of the capping layer is disposed beneath a protruded side of the first protective layer, and the portion of the capping layer is in direct contact with the first light-emitting layer. The lower surface of the second electrode is in direct contact with the first protective layer, the second protective layer, and the capping layer. The first protective layer includes an inorganic material, and the second protective layer includes a metal oxide.

The present disclosure discloses a light emitting apparatus that includes a semiconductor layer, a support layer supporting the semiconductor layer, a first electrode disposed between the support layer and the semiconductor layer, and a second electrode disposed on the semiconductor layer, in which the semiconductor layer includes a first conductivity type semiconductor layer disposed on the first electrode and electrically connected to the first electrode, an active layer covering the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer covering the active layer and electrically connected to the second electrode, and a cross-sectional length of a first surface of the first conductivity type semiconductor layer facing the first electrode is shorter than a cross-sectional length of a second surface facing the active layer.

The present application discloses a display module, a manufacturing method thereof, and a display device thereof. The display module includes a display panel, a cover plate and a first bonding layer and a second bonding layer therebetween. The first bonding layer and the second bonding layer are at least disposed in corner sub-regions of the display module. The first bonding layer contacts the cover plate. A surface of a side of the second bonding layer near cover plate contacts a surface of a side of the first bonding layer away from cover plate. A curing rate of the first bonding layer is greater than or equal to a curing rate of the second bonding layer.