The present disclosure provides a wiring substrate, a method manufacturing the same, and an electronic device. The wiring substrate includes a base substrate, a plurality of pad groups on the base substrate, each pad group including at least two pads. Two pads adjacent in a first direction or a second direction of the at least two pads are spaced apart. Each pad includes a plurality of sides including at least one selected side and at least one non-selected side, any one pad is adjacent to another pad along the first direction or the second direction, the selected side of the any one pad is a side facing the adjacent another pad, and a distance between the selected side of the any one pad facing the adjacent another pad and the selected side of the adjacent another pad facing the any one pad is 30 m and <100 m.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

A fabrication method for a crosstalk-proof structure of an integrated colored Micro LED whereby a side, away from a base layer, of an integrated Micro LED chip with a common N electrode is covered with a black adhesive layer, the black adhesive layer is etched, and electrodes of the Micro LED chip are exposed, so that optical crosstalk between gallium nitride Mesas can be avoided; and a base layer is stripped, and N-type gallium nitride layers of a first Micro LED chip module are isolated, so that the N-type gallium nitride layers can be isolated by the black adhesive layer to avoid optical crosstalk inside an N-type gallium nitride material of a common N-type chip and optical crosstalk of the base part. In such a way, the problem of optical crosstalk on an LED light emitting optical path can be avoided.

A light-emitting device includes an insulating substrate having one or more first cutouts and one or more second cutouts provided on opposite side surfaces thereof. First and second wiring electrodes, which are separated from each other, correspond respectively to the first and second cutouts. The first and second wiring electrodes each cover a region that extends over an edge of the corresponding cutout on an upper surface of the substrate and a region that extends over an edge the corresponding cutout on a lower surface of the substrate from an internal surface of the cutout. First and second resin films cover surfaces the first and second wiring electrodes in regions that extend over edges along the first and second cutouts in a top view. A light-emitting element is placed on the substrate to allow power to be supplied by the first wiring electrode and the second wiring electrode.

An inventive light-emitting array includes multiple semiconductor light-emitting diodes (LEDs). Each LED of the array includes first and second doped semiconductor layers and an active layer them, and emits light at a nominal emission vacuum wavelength .sub.0 resulting from charge carrier recombination at the active layer. The active layer differs in chemical composition from the first and second semiconductor layers and is between 0.1 nm thick and 1 nm thick. Each LED exhibits a small-signal bandwidth greater than 0.10 GHZ, in some instances at a nonzero current density less than 2000 A/cm.sup.2. In some instances the doped semiconductor layers can be p-doped and n-doped GaN layers, and the active layer can be a monolayer of a III-nitride compound, e.g., InGaN.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

A light-emitting element, and a light-emitting component and its manufacturing method, belonging to field of semiconductor manufacturing technologies, are provided. The light-emitting element includes at least two light-emitting units adjacent to one another, and a bridging conductive bridge bridged between adjacent light-emitting units to make the adjacent light-emitting units be connected in series. The light-emitting unit includes an epitaxial structure and a dielectric layer. The epitaxial structure includes first and second surfaces. The light-emitting units connected in series are defined with a trench therebetween penetrating from the first surface to the second surface. The second surface is formed with multiple removal areas. The dielectric layer covers the second surfaces of the light-emitting units connected in series and extends across the trench. The bridging conductive bridge is on a side of the dielectric layer facing away from the epitaxial structure and electrically connected to the epitaxial structure through the removal area.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.

A display device, a light emitting element, and a manufacturing method of the display device are provided. The display device includes: a substrate on which a pixel electrode is located; a light emitting element on the pixel electrode and including an element rod and a contact electrode on one surface and a side surface of the element rod; a connection electrode electrically connecting the contact electrode and the pixel electrode; and a common electrode on the light emitting element, wherein the element rod includes: a first element rod including a first semiconductor layer and an active layer and having a side surface having a first inclination angle; a second element rod on the first element rod and having a side surface having a second inclination angle; and a third element rod on the second element rod and having a side surface having a third inclination angle.