A ceramic substrate including a ceramic plate, a seed layer arranged on an upper surface of the ceramic plate, a Cu layer arranged on an upper surface of the seed layer, an intermediate layer of one or more layers arranged on an upper surface of the Cu layer and a lateral surface of the Cu layer, and an Au layer arranged on an upper surface of the intermediate layer and a lateral surface of the intermediate layer. The upper surface of the seed layer and the intermediate layer contact each other. The upper surface of the ceramic plate and the Au layer do not contact each other. An edge portion of the upper surface of the seed layer is located outside an edge portion of a lower surface of the Cu layer in a horizontal direction.

A light emitting device including a protection layer including a first area and a second area having a greater thickness than the first area, a light emitting stacked structure including a plurality of semiconductor layers sequentially disposed one over another along a first direction on the first area of the protection layer, a plurality of via patterns electrically connected to the light emitting stacked structure and having a length along the first direction, and a plurality of pads electrically connected to the light emitting stacked structure through the via patterns, respectively, in which the second area of the protection layer does not overlap the light emitting stacked structure, and at least portion of the pads overlaps the second area of the protection layer and one of the via patterns.

A packaging structure and a formation method thereof are provided. The packaging structure includes a base, a semiconductor element, a wrap layer, a cap layer, and an electrical connecting structure. The wrap layer is disposed on the base, covers the semiconductor element, and exposes the top surface of the semiconductor element. The cap layer is disposed on the wrap layer and the semiconductor element and includes a first and a second part. The first part is in contact with the semiconductor element. The second part is in contact with the wrap layer, wherein in measurement results of Fourier transform infrared spectroscopy, the ratio between maximum intensities at wavenumbers of 1060 cm.sup.1 to 1080 cm.sup.1 and 780 cm.sup.1 to 800 cm.sup.1 of the second part is greater than 0.65. The electrical connecting structure passes through the base and the wrap layer to electrically connect to the semiconductor element.

A display device includes a first alignment electrode and a second alignment electrode spaced apart from each other and disposed on a substrate, light emitting elements disposed between the first alignment electrode and the second alignment electrode, and an amorphous silicon layer disposed on the light emitting elements. The amorphous silicon layer includes an electrode portion disposed on a first end portion and a second end portion of each of the light emitting elements, and an insulating portion.

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.

The present disclosure can be applied to technical fields relating to display devices, and relates to a display device using, for example, micro light emitting diodes (LEDs), and a manufacturing method therefor. The present disclosure comprises the following steps: preparing an assembly in which a shock-absorbing layer is formed on a wiring substrate in which electrode pads are formed; positioning light emitting elements arranged on a base substrate at the locations of the electrode pads on the assembly; transferring the light emitting elements onto the shock-absorbing layer; and bonding the light emitting elements to the electrode pads.

A display panel and a preparation method therefor, a display apparatus, and a tiled display apparatus are provided. The display panel includes: a substrate including a first surface and a second surface opposite to each other, and a plurality of side surfaces which include at least one selected side surface and connect the first surface with the second surface; a plurality of connecting leads each including a first lead segment located on the first surface, a second lead segment located on the selected side surface, and a third lead segment and a fourth lead segment located on the second surface; a protective layer at least covering side surfaces of the first, second, third and fourth lead segments and a transfer layer covering a surface of the fourth lead segment away from the substrate and electrically connected to the fourth lead segment.

A display device including a display area and a non-display area formed around the display area comprises a substrate, a pixel circuit layer disposed on the substrate, and including a plurality of sub-pixel circuits disposed in the display area, a plurality of first conductive connectors disposed on the pixel circuit layer, and a display element layer disposed on the first conductive connectors. The display element layer may include a plurality of light emitting elements disposed in the display area, electrically connected to the sub-pixel circuits through the first conductive connectors disposed in the display area and configured to emit light in response to signals applied from the sub-pixel circuits, and a plurality of dummy light emitting elements disposed in the non-display area. The light emitting elements and the dummy light emitting elements may include a same material.

An optoelectronic device for a light display including: a support; a light element with at least one first electrode; primary conductive elements; and secondary conductive elements. The device further includes a first electrically insulating element, wherein for said at least one light element, at least one first connecting portion of at least one of the secondary conductive elements corresponding to the light element is formed in all or part of a first imprint obtained in the first electrically insulating element. The first connecting portion of the secondary conductive element is in contact with the first electrode.

A display device includes a lower substrate, a bonding electrode disposed on the lower substrate, and a light emitting element disposed on the bonding electrode. The bonding electrode includes a first bonding metal layer and a second bonding metal layer sequentially disposed on the lower substrate, each including a bonding metal, a third bonding metal layer disposed between the first bonding metal layer and the second bonding metal layer, and including the bonding metal, a first thin film layer disposed between the first bonding metal layer and the third bonding metal layer, and a second thin film layer disposed between the second bonding metal layer and the third bonding metal layer, and the first thin film layer and the second thin film layer include a material with an atomic volume that is greater than or equal to about 80% of an atomic volume of the bonding metal.