A fabrication method for a crosstalk-proof structure of an integrated colored Micro LED whereby a side, away from a base layer, of an integrated Micro LED chip with a common N electrode is covered with a black adhesive layer, the black adhesive layer is etched, and electrodes of the Micro LED chip are exposed, so that optical crosstalk between gallium nitride Mesas can be avoided; and a base layer is stripped, and N-type gallium nitride layers of a first Micro LED chip module are isolated, so that the N-type gallium nitride layers can be isolated by the black adhesive layer to avoid optical crosstalk inside an N-type gallium nitride material of a common N-type chip and optical crosstalk of the base part. In such a way, the problem of optical crosstalk on an LED light emitting optical path can be avoided.

A light-emitting element, and a light-emitting component and its manufacturing method, belonging to field of semiconductor manufacturing technologies, are provided. The light-emitting element includes at least two light-emitting units adjacent to one another, and a bridging conductive bridge bridged between adjacent light-emitting units to make the adjacent light-emitting units be connected in series. The light-emitting unit includes an epitaxial structure and a dielectric layer. The epitaxial structure includes first and second surfaces. The light-emitting units connected in series are defined with a trench therebetween penetrating from the first surface to the second surface. The second surface is formed with multiple removal areas. The dielectric layer covers the second surfaces of the light-emitting units connected in series and extends across the trench. The bridging conductive bridge is on a side of the dielectric layer facing away from the epitaxial structure and electrically connected to the epitaxial structure through the removal area.

A device and method of forming the device are disclosed herein. The device having a silicone layer disposed on an LED structure, the device further including an inorganic protection layer disposed on a surface of the phosphor layer opposite the LED structure. The method of forming the device includes using atomic layer deposition to deposit the inorganic protection layer on the silicone layer.

A display device includes a pixel electrode and a common electrode on the substrate and spaced from each other, a light emitting element including a first contact electrode on the pixel electrode and a second contact electrode on the common electrode and a first connection electrode that electrically connects the first contact electrode and the pixel electrode, and a second connection electrode that electrically connects the second contact electrode and the common electrode, wherein the light emitting element further includes: a plurality of semiconductor layer stacks, a protective layer around sides of the plurality of semiconductor layer stacks except one side and a reflective layer around the plurality of semiconductor layer stacks on the protective layer, wherein the protective layer and the reflective layer protrude from a top end of the semiconductor layer stack to an outside perpendicular to the side of the semiconductor layer stack.

A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.

A display device includes a first alignment electrode and a second alignment electrode spaced apart from each other and disposed on a substrate, light emitting elements disposed between the first alignment electrode and the second alignment electrode, and an amorphous silicon layer disposed on the light emitting elements. The amorphous silicon layer includes an electrode portion disposed on a first end portion and a second end portion of each of the light emitting elements, and an insulating portion.

An electronic apparatus includes a display panel, and a window member disposed on the display panel. The window member may include a support film, a coating window disposed on the support film, and a light-blocking pattern spaced apart from the coating window with the support film disposed therebetween. The light-blocking pattern may be formed of a light-blocking composition including a black colorant, an ultraviolet photoinitiator, a near-infrared photosensitizer, a near-infrared photoinitiator, and an adhesive resin.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding at least a side surface of the active layer. The first semiconductor layer has a diameter in a range of about 0.5 m to about 10 m, and the light emitting element has an external quantum efficiency greater than or equal to about 23%.

A display device includes a display element layer on a substrate, the display element layer includes an anode electrode and a cathode electrode spaced apart on the substrate, an overcoat pattern on the anode electrode, a light emitting element on the overcoat pattern and including a first end portion adjacent to the overcoat pattern and a second end portion spaced apart from the first end portion, a first transparent electrode layer on the overcoat pattern and electrically connecting the anode electrode to the first end portion of the light emitting element, at least one insulating layer on the first transparent electrode layer and the cathode electrode, and a second transparent electrode layer on the at least one insulating layer and electrically connecting the cathode electrode to the second end portion of the light emitting element.

A light-emitting diode structure and a manufacturing method thereof are provided. The light-emitting diode structure includes a substrate, multiple light-emitting diode units, and a reflective layer. The light-emitting diode units are arranged in arrays on the substrate. Each of the light-emitting diode units includes a light-emitting diode chip, a wavelength conversion layer, and a short-pass filter coating. The light-emitting diode chip is disposed on the substrate in a flip-chip manner. The wavelength conversion layer is disposed on the light-emitting diode chip. The short-pass filter coating is disposed between the wavelength conversion layer and the light-emitting diode chip. The reflective layer is filled in a gap between the light-emitting diode chips of the light-emitting diode units and is disposed on a side surface of the light-emitting diode chips.