A method for manufacturing an optoelectronic device. The method first comprises the provision of a stack comprising a substrate, the upper face of which extends along a longitudinal plane, a first diode and a second diode separated in pairs by a trench. Then, in the trench, a mirror is formed, having a first flank and a second flank oriented respectively facing the first diode and the second diode, each forming a reflection interface for light emitted or received by the diodes, such that the reflection interfaces each form a reflection angle with the longitudinal plane, measured in the mirror, less than 89.

A method of manufacturing a display device includes forming a release frame exposing an uppermost surface of a display stack, wherein the display stack includes a first stack and a second stack sequentially stacked, and the uppermost surface of the display stack is an upper surface of the second stack, applying a first curable resin on the upper surface of the second stack and the release frame adjacent thereto, forming a flexible coating layer on the second stack by curing the first curable resin, and removing the release frame.

A Micro LED display chip and a method for forming the same are provided. The method includes: forming a base including light emitting mesas arranged in an array; forming a passivation layer on a sidewall surface of each light emitting mesa and a surface of the base, and the passivation layer exposes a top surface of each light emitting mesa; and forming a light reflection layer on the top surface of each light emitting mesa and on a part or whole of the passivation layer on the sidewall surface of each light emitting mesa. A light reflectivity of a material of the light reflection layer is greater than or equal to a preset light reflectivity threshold, which can improve a light emission rate and a brightness of the Micro LED display chip.

A display module includes: a substrate, a first dielectric layer, a second dielectric layer and a plurality of color filters. The substrate is disposed with a plurality of light-emitting diodes (LEDs) thereon. The LEDs have a non-smooth upper surface. The first dielectric layer is located on the substrate and surrounding the LEDs. The first dielectric layer is filled between the substrate and the second dielectric layer, and a refractive index of the second dielectric layer is greater than a refractive index of the first dielectric layer. The color filters are located on a side of the second dielectric layer opposite to the first dielectric layer.

The disclosure provides a semiconductor structure and a method for manufacturing thereof. The semiconductor structure includes a substrate, a light-emitting pixel layer on the substrate, and reflective parts. The substrate includes a first surface and a second surface opposite to the first surface, the first surface includes a convex parts, and each of the convex parts protrudes in a direction away from the second surface; the light-emitting pixel layer includes at least one light-emitting pixel including a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially disposed on the second surface, and conductivity types of the first semiconductor layer and the second semiconductor layer are opposite; and the reflection parts are conformally formed on the convex parts, and the reflection parts and the convex parts are in one-to-one correspondence in position.

In at least one embodiment, an optoelectronic device includes a carrier with a mounting area, an optoelectronic semiconductor chip mounted at the mounting area of the carrier and a filling material arranged on the mounting area laterally next to the semiconductor chip, wherein a side surface of the semiconductor chip is wetted by the filling material. The optoelectronic device further comprises at least one attraction feature at the mounting area laterally next to and spaced from the semiconductor chip. The attraction feature is at least laterally surrounded by the filling material. The attraction feature is different from the portion of the mounting area, which lies laterally next to the attraction feature and which laterally surrounds the attraction feature. Further, the attraction feature is configured to attract a liquid phase of the filling material due to minimization of surface energy.

Devices and methods for a microLED array and a bonded CMOS driver chip. An example array includes a plurality of microLEDs having backside contacts, a plurality of through-substrate vias, a CMOS driver chip bonded to the backside contacts of the microLEDs, and an encapsulating layer forming an integrated surface of the array. At least one through-substrate via is paired with each microLED. Each through-substrate via electrically connects the paired microLED to the CMOS driver chip.

A light-emitting structure includes a substrate and a plurality of light-emitting units arranged in an array and spaced apart on the substrate. In the light-emitting unit, the second-type doped layer and the first-type doped layer are in contact with opposite sides of the light-emitting layer. The surface of the second-type doped layer facing away from the substrate is flush with the surface of the first-type doped layer facing away from the substrate. The first-type electrode is in contact with the surface of the first-type doped layer facing away from the substrate, and the second-type electrode is in contact with the surface of the second-type doped layer facing away from the substrate. The surface of the first-type electrode facing away from the substrate is flush with the surface of the second-type electrode facing away from the substrate.

A light-emitting apparatus includes a light emitting device, a set of transmissive optical elements, and a side wall coating layer forming a rigid spacer. The set of optical elements is positioned with its back optics surface facing and spaced apart from the front device surface. Device output light emitted from light-emitting areas of the front device surface propagates to and through the optical elements. The space between the front device surface and the back optics surface, through which the device output light propagates, is either evacuated or filled with ambient air or inert gas. The side wall coating layer, on side surfaces of the light-emitting device or on side surfaces of multiple light-emitting elements thereof, extends beyond the front device surface to form the spacer, which leaves unobstructed at least portions of the one or more light-emitting areas of the front device surface.

A display device includes a substrate, a circuit layer, a first electrode, a pixel defining layer, a first light-emitting layer, a protective layer, a capping layer, and a second electrode. The protective layer includes a first protective layer disposed on the first light-emitting layer and a second protective layer disposed on the first protective layer and having greater etch resistance than the capping layer. The capping layer covers one side of the first light-emitting layer. A portion of the capping layer is disposed beneath a protruded side of the first protective layer, and the portion of the capping layer is in direct contact with the first light-emitting layer. The lower surface of the second electrode is in direct contact with the first protective layer, the second protective layer, and the capping layer. The first protective layer includes an inorganic material, and the second protective layer includes a metal oxide.