Solid-state lighting devices and more particularly long pass filter structures for light-emitting diodes are disclosed. LED packages are disclosed that include one or more LED chips, lumiphoric materials, and integrated filter structures for reducing emissions below certain wavelengths, for example emissions that may have adverse effects on normal wildlife behavior, such as nesting sea turtles and/or newly-hatched sea turtles. Exemplary filter structures are disclosed with specific arrangements for preferentially reflecting undesired wavelengths, such as those of the one or more LED chips, while preferentially transmitting intended wavelengths, such as wavelength-converted wavelengths from lumiphoric materials. Exemplary filter structures include various layers with various tailored optical thicknesses for light entrance, middle, and light exit portions of filter structures.

A light-emitting device includes a substrate including a first and second substrates of silicon. The first substrate includes insulating films formed on upper and lower surfaces. The second substrate, bonded to the upper surface of the first substrate, has an opening exposing an area on the upper surface. A first thermally-oxidized insulating film is formed in another area on the upper surface. A second, different thermally-oxidized insulating film is in the area. The first substrate has a first and second through-hole groups. The first through-hole group includes through holes penetrating from at a first part of the area to the lower surface. The second through-hole group includes through holes penetrating from a second part of the area to the lower surface. The first upper surface electrode is formed on the first through-hole group. The second upper surface electrode is formed on the second through-hole group.

A light-emitting device includes a substrate having first and second substrates of single-crystal silicon. The first substrate includes thermally-oxidized films on upper and lower surfaces thereof. The second substrate, bonded to the upper surface of the first substrate, has an opening exposing an area on the upper surface of the first substrate. The first substrate has first and second through-hole groups, the first through-hole group including through holes penetrating from a first part in the area to the lower surface of the first substrate. The second through-hole group includes through holes penetrating from a second part to the lower surface of the first substrate, 10 the second part forming a gap along one direction with respect to the first part. The first upper surface electrode is on the first through-hole group. The second upper surface electrode is on the second through-hole group opposed to the first upper surface electrode.

A package includes a first frame, a second frame and a package body. The first frame includes a first body and at least one first protrusion. The at least one first protrusion is disposed on the first body. The second frame is arranged opposite to the first frame, and includes a second body and at least one second protrusion. The at least one second protrusion is disposed on the second body. The package body encapsulates the first frame and the second frame, and the first protrusion and the second protrusion are exposed on a top surface of the package body. In a horizontal direction, a distance between the first protrusion and the second protrusion is smaller than a distance between the first body and the second body.

A display module includes: a substrate including a mounting surface on which a plurality of inorganic light-emitting diodes emitting light in a first direction are mounted, a side surface, and a rear surface being opposite to the mounting surface; a front cover bonded with the mounting surface and covering the mounting surface in the first direction; a metal plate bonded with the rear surface; a side cover surrounding the side surface; and a side end member covering at least one portion of the side cover and extending in a second direction being orthogonal to the first direction along the side surface, wherein the side end member includes a body extending in the second direction, and a plurality of ribs extending from the body in the first direction and arranged at intervals along the second direction.

In a light-emitting diode, a projection of a current spreading layer in a direction from a first surface to a second surface does not overlap with a projection of a first electrode in the direction from the first surface to the second surface, the projection of the current spreading layer in the direction from the first surface to the second surface has a minimum distance from a geometric center of a projection of a pad electrode in the direction from the first surface to the second surface, and a projection of a first ohmic contact layer in the direction from the first surface to the second surface is located outside a circumference centered at the geometric center of the projection of the pad electrode in the direction from the first surface to the second surface with a radius of the minimum distance.

The present invention relates to an epitaxial die and a chip die for a semiconductor light-emitting device, and a manufacturing method thereof, wherein only one of two electrodes is exposed to the outside, and a process of forming a positive ohmic contact electrode (p-ohmic contact electrode) or a negative ohmic contact electrode (n-ohmic contact electrode) is completed in an epitaxial die manufacturing step so as to achieve dramatic thickness reduction and easy reduction of the chip die size, thereby improving the light output.

Bulk relaxed Wurtzite In-containing III-nitride layers having a smooth and substantially pit-free surface morphology and an interface region having a substantially relaxed in-plane a-lattice parameter and characterized by a single-phase gallium-polar (0001) orientation are disclosed. Methods of making the bulk relaxed Wurtzite In-containing III-nitride layers using MOCVD growth conditions are also disclosed. Semiconductor structures include epitaxial layers grown on a bulk relaxed Wurtzite In-containing III-nitride layer. The semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and display applications.

A submount includes: a support layer; a first graphite layer disposed on the support layer; a first metal layer disposed on the first graphite layer; and a second metal layer disposed on the first metal layer. The first metal layer is thicker than the second metal layer. A first region in which the first metal layer is not disposed is provided at an outer peripheral portion of an upper surface of the first graphite layer. The second metal layer covers the first metal layer and the first region of the upper surface of the first graphite layer.

A luminous device including an optical device and a first printed circuit board on which is fastened a light source including a light ray emitting zone and a protective housing surrounding the light ray emitting zone. A first height of the protective housing, relative to a flat surface of the first printed circuit board, being greater than a second height of the light ray emitting zone. The luminous device also includes a mask arranged between the optical device and the light ray emitting zone so as to prevent rays coming from the light ray emitting zone from being reflected on the protective housing and reaching the optical device, the mask bearing directly against the first printed circuit board and/or directly against the light source.