A display device includes a bank layer disposed on a substrate and defining a light-emitting area and a sub-area, a first electrode and a second electrode spaced apart from each other and extending from the light-emitting area to the sub-area, a plurality of light-emitting elements disposed on the first electrode and the second electrode in the light-emitting area, a plurality of dummy light-emitting elements disposed on the first electrode and the second electrode in the sub-area, a first connection electrode in electrical contact with an end of each of the plurality of light-emitting elements, and a second connection electrode in electrical contact with another end of each of the plurality of light-emitting elements. The sub-area includes an isolation area in which each of the first electrode and the second electrode is disconnected, and the plurality of dummy light-emitting elements are not disposed in the isolation area.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

Disclosed are a Micro LED micro-display chip and a manufacturing method thereof. The Micro LED micro-display chip includes a driver panel; multiple LED units arranged on the driver panel, wherein the multiple LED units includes multiple LED mesas in a one-to-one correspondence with the multiple LED units, and each of the LED units is independently drivable by the driver panel; a grid structure having multiple grid holes, wherein the multiple grid holes are respectively provided around the multiple LED mesas, and recess areas are formed between the LED mesas and the respective grid holes; a wavelength conversion layer provided on the grid structure, including multiple first wavelength conversion units filling the corresponding recess areas and configured to convert the first color light emitted by the LED units into second color light.

A semiconductor device includes a first impurity region, a second impurity region spaced from the first impurity region by a first length in a first direction, and a first channel region having a third length longer than the first length between the first and second impurity regions, a convex portion in a second direction between the first and second impurity regions, a third impurity region, a fourth impurity region spaced from the third impurity region by a second length in the first direction, and a second channel region having a fourth length longer than the second length between the third and fourth impurity regions, a concave portion opposite to the second direction between the third and fourth impurity regions, a first gate electrode above the first channel region and covering the convex portion, and a second gate electrode above the second channel region and filling the concave portion.

A display device including a substrate including a pixel circuit, a pixel electrode connected to the pixel circuit, an insulating layer disposed on the pixel electrode, a through electrode penetrating the insulating layer and connecting to the pixel electrode, a bottom bonding electrode and an upper bonding electrode sequentially disposed on the through electrode and the insulating layer, and a light emitting element disposed on the upper bonding electrode. The through electrode has a groove whose upper surface is concave downward. A lower surface of the bottom bonding electrode follows the surface profile of the insulating layer and the through electrode disposed below, and an upper surface is flat. The bottom bonding electrode includes an oxide layer.

A display having a related manufacturing method includes some pixel regions and a controller. Each pixel region includes a plurality of lighting units arranged as a matrix and respectively having a plurality of wavelength parameters. An arrangement rule of the plurality of wavelength parameters of one of the pixel regions is similar to an arrangement rule of the plurality of wavelength parameters of another pixel region. The controller is electrically connected to the pixel regions and adapted to change a distance between two adjacent lighting units of the pixel regions. An average intensity difference between two adjacent pixel regions inside the display is smaller than or equal to five percent. An average chroma difference between two adjacent pixel regions inside the display is smaller than or equal to 0.01.

A pixel TFT is an oxide semiconductor TFT having a top gate structure. The active matrix substrate includes a first interlayer insulating layer covering the gate electrode and the oxide semiconductor layer and a second interlayer insulating layer provided on the first interlayer insulating layer, and the source electrode is provided on the second interlayer insulating layer. The first interlayer insulating layer includes a first source opening. The second interlayer insulating layer includes a second source opening located inside the first source opening. The source electrode is electrically connected to a source contact region of the oxide semiconductor layer in the second source opening.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by blocking the light generated from at least one light emitting unit among the multiple light emitting units, or having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.

A display device includes a light emitting diode disposed on a thin-film transistor (TFT) array substrate, a micro lens disposed on the light emitting diode, overlapping the light emitting diode, and including a resin, and a hydrophobic coating layer disposed on the micro lens and covering the micro lens.

A display device includes a pixel electrode, a light emitting element including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially located on the pixel electrode, a groove being in a portion of the light emitting element where the second semiconductor layer is located, a common electrode on the light emitting element, and a light scattering layer on the common electrode and filling the groove.