A light emitting apparatus includes: a circuit board; a plurality of light emitting devices connected to the circuit board; and a reflective sheet that reflects light emitted from the plurality of light emitting devices and includes a plurality of reflective cells which respectively accommodate the plurality of light emitting devices. The plurality of reflective cells include a plurality of low-reflection patterns. The plurality of low-reflection patterns include a pattern disposed closer to an edge of the reflective sheet, size of which is relatively smaller than size of other patterns.

A display module includes a substrate; an anisotropic conductive film on one side of the substrate; a plurality of light-emitting diodes connected to the substrate via the anisotropic conductive film; and a color conversion layer on the plurality of light-emitting diodes and configured to be excited by a light having a first wavelength emitted from the plurality of light-emitting diodes and emit a light of a second wavelength that is different from the first wavelength. The anisotropic conductive film includes: an insulating adhesive layer adhering to the one side of the substrate; a plurality of conductors within the insulating adhesive layer and configured to electrically connect the plurality of light-emitting diodes to the substrate; and a plurality of reflectors within the insulating adhesive layer and having a size less than a size of the plurality of conductors.

The present application relates to a quantum dot ink, a quantum dot layer patterning method, and a quantum dot optoelectronic device. The quantum dot ink contains a quantum dot material; a cross-linking agent and a photoacid generator, wherein the quantum dot material comprises quantum dots and an organic ligand on surfaces of the quantum dots, the organic ligand comprises a crosslinking unit and a coordination functional group coordinated with the quantum dots, the crosslinking unit in the organic ligand can be subjected to a cross-linking reaction with a polyhydroxy compound cross-linking agent under the catalysis of hydrogen ions generated via the photoacid generator under ultraviolet irradiation. By means of the quantum dot ink, since photocrosslinking molecules directly participate in patterning of a quantum dot layer, there is no need to wash away a photoresist sacrificial layer compared to existing photoresist patterning methods, so that the process flow is greatly simplified.

A display device includes a first substrate, a light-emitting unit disposed on the first substrate, an intermediate layer on the light-emitting unit, and a color filter layer on the intermediate layer. The intermediate layer has a first refractive index n1, the color filter layer has a second refractive index n2, and the first refractive index n1 is less than the second refractive index n2.

A display, in a micro light-emitting diode (LED) display, is provided. The display includes a barrier rib forming a pixel area, a micro LED disposed in the pixel area, a light-blocking portion defining an open area of the pixel area, a quantum dot color converter layer formed in the pixel area, and a color filter layer disposed to correspond to the quantum dot color converter layer, wherein an area of the pixel area is formed larger than an area of the open area, and wherein a first gap between pixel areas adjacent in a first direction is formed narrower than a second gap between pixels adjacent in a second direction that is perpendicular to the first direction.

A semiconductor nanoparticle, a method of producing the nanoparticle, and an electronic device including the same. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, where in the semiconductor nanoparticle, a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1, a mole ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1, the semiconductor nanoparticle is configured to emit light, and a full width at half maximum of a luminescent spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

Provided is a near-infrared light emitting device including a solid-state light emitting element that emits blue primary light, a wavelength converter that converts the primary light into near-infrared wavelength-converted light, an organic polymer member through which mixed light of the primary light and the wavelength-converted light is transmitted. The organic polymer member has a thickness of 3 m or more and less than 300 m, a light transmittance of less than 0.1% at a wavelength of 400 nm or less, a light transmittance of less than 1% at or below a wavelength of the emission peak of the primary light, and a light transmittance of less than 30% at a wavelength of 500 nm or less, a light transmittance of 75% or more and less than 100% within a wavelength range of 750 nm or more and less than 1,100 nm.

A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.

The present disclosure provides a light-emitting chip, a light-emitting device and a display apparatus. The light-emitting chip includes a pixel circuit layer, a light-emitting unit group located on a side of the pixel circuit layer, and a plurality of conductive pads located on a side of the pixel circuit layer facing away from the light-emitting unit. The pixel circuit layer includes at least a part of the structure of the pixel circuit and a plurality of signal lines. The light-emitting unit group includes at least one light-emitting unit, the light-emitting unit is electrically connected with the pixel circuit. One of the conductive pads is electrically connected with one of the signal lines. The light-emitting device includes the plurality of light-emitting chips and the second drive circuit, the plurality of conductive pads are connected with the second drive circuit. The display apparatus includes a light-emitting device.

Provided is a display panel. The display panel includes a base substrate, a light-emitting layer, a package layer, and a light conversion layer that are successively stacked. The light conversion layer includes a plurality of light conversion units arranged in an array and a plurality of micro-mirror structures. The plurality of light conversion units include a plurality of first light conversion units, and the plurality of micro-mirror structures include a plurality of first micro-mirror structures surrounding the first light conversion units. Each of the first micro-mirror structures is configured to reflect at least a portion of light from an interior of each of the first light conversion units.