A light emitting element includes: a semiconductor stack structure including: a first p-type semiconductor layer, a first active layer disposed on the first p-type semiconductor layer, a first n-type semiconductor layer disposed on the first active layer, an intermediate layer disposed on the first n-type semiconductor layer, a second p-type semiconductor layer disposed on the intermediate layer, a second active layer disposed on the second p-type semiconductor layer, and a second n-type semiconductor layer disposed on the second active layer, wherein: a plurality of first openings are continuously located in the first p-type semiconductor layer, the first active layer, and the first n-type semiconductor layer, and a plurality of second openings are continuously located in the first p-type semiconductor layer, the first active layer, the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, the second active layer, and the second n-type semiconductor layer.

Chiplets containing micro-LEDs are designed with two sets of interconnects. One set connects the cathode and anode terminals on the micro-LEDs to contacts for the chiplet. These contacts may then be connected to circuitry outside the chiplet. The other set connects micro-LED terminals to test pads on the wafer when the chiplets are still in wafer form. Multiple chiplets are connected to individual test pads. The micro-LEDs may be fabricated as an array on the wafer, with the test pads arranged around the periphery of the array. As a result, automated test equipment may probe the test pads to test the chiplets while they are still in wafer form.

A MicroLED display panel includes a plurality of display structures, where each display structure includes a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer, and a light emitting layer; first electrodes, first semiconductor layers, and light emitting layers of adjacent display structures are independent of each other; the first semiconductor layer and the second semiconductor layer are respectively located on surfaces of two sides of the light emitting layer; the first electrode is located on a side that is of the first semiconductor layer and that is away from the light emitting layer, and the second electrode is located on a side that is of the second semiconductor layer and that is away from the light emitting layer; the light emitting layer of each display structure corresponds to one pixel region; and the second electrode is routed around each pixel region.

A stretchable display device includes a base substrate having a rigid portion and a soft portion; a stretchable line in the soft portion over the base substrate; a first electrode and a second electrode in the rigid portion over the base substrate; and a light-emitting element contacting the first electrode and the second electrode, wherein the first electrode and the second electrode have a plurality of first protrusions and a plurality of second protrusions, and the light-emitting element is in contact with the plurality of first protrusions and the plurality of second protrusions.

A display device may include a substrate; transmissive areas spaced apart from each other; an area which includes sub-pixels; an over-coating layer which is disposed on the substrate and includes a base portion and a protrusion on the base portion; and an anode which is disposed in each sub-pixel and covers the base portion and a part of the protrusion. Each sub-pixel may include an emission area and an outer peripheral area which encloses the emission area. The outer peripheral area may include first outer peripheral areas opposite to adjacent other sub-pixels and second outer peripheral areas opposite to adjacent transmissive areas. Trenches may be disposed in the protrusion in the first outer peripheral areas. The anode may be disposed in the trenches in the first outer peripheral areas.

A micro LED display panel includes a micro LED array including a plurality of micro LEDs and a plurality of electrical connection structures disposed around the plurality of micro LEDs and electrically connected to the plurality of micro LEDs. A plurality of light propagation channels are formed between adjacent ones of the micro LEDs. Each light propagation channel includes at least one of a plurality of gaps defined between adjacent ones of the electrical connection structures. From a top view of the micro LED array, the light propagation channels are flexural.

A display device includes a first electrode above a substrate, a second electrode above the substrate, and spaced apart from the first electrode in a first direction, an inorganic light-emitting element in a first auxiliary pixel area, above the first electrode, and connected to the first electrode, an organic light-emitting layer above the substrate, in a second auxiliary pixel area spaced apart from the first auxiliary pixel area in the first direction, and covering the second electrode, and a third electrode above the organic light-emitting layer.

A semiconductor device is provided. The semiconductor device includes a semiconductor structure, an outer electrode structure, an inner electrode structure, and an adjustment structure. The semiconductor structure includes a first portion and a second portion, wherein the second portion is on the first portion and includes an active region. The outer electrode structure is on the first portion of the semiconductor structure and has a first top surface. The inner electrode structure is on the second portion of the semiconductor structure and has a second top surface. The adjustment structure covers the semiconductor structure and is in contact with the outer electrode structure and the inner electrode structure, and the adjustment structure has a third top surface. The third top surface is substantially coplanar with either the first top surface, the second top surface, or both.

A multi-level semiconductor device, the device comprising: a first level comprising integrated circuits; a second level comprising at least one electromagnetic wave receiver, wherein said second level is disposed above said first level, wherein said integrated circuits comprise single crystal transistors; and an oxide layer disposed between said first level and said second level, wherein said device comprises at least one read out circuit, wherein said second level is bonded to said oxide layer, and wherein said bonded comprises oxide to oxide bonds.

A display panel includes an integrated circuit substrate, a light-emitting device layer and a second electrode. The light-emitting device layer includes light-emitting devices disposed respectively in light-emitting areas and insulating layers disposed respectively in insulating barrier areas, and each insulating barrier area is disposed between two adjacent light-emitting areas. Each insulating layer has opposite ends respectively connected to the second electrode and the integrated circuit substrate and each light-emitting device is surrounded by several insulating layers, so that the several insulating layers, the second electrode and the integrated circuit substrate together form a closed accommodating chamber for accommodating the light-emitting device.