An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.

A fabrication method for a crosstalk-proof structure of an integrated colored Micro LED whereby a side, away from a base layer, of an integrated Micro LED chip with a common N electrode is covered with a black adhesive layer, the black adhesive layer is etched, and electrodes of the Micro LED chip are exposed, so that optical crosstalk between gallium nitride Mesas can be avoided; and a base layer is stripped, and N-type gallium nitride layers of a first Micro LED chip module are isolated, so that the N-type gallium nitride layers can be isolated by the black adhesive layer to avoid optical crosstalk inside an N-type gallium nitride material of a common N-type chip and optical crosstalk of the base part. In such a way, the problem of optical crosstalk on an LED light emitting optical path can be avoided.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength .sub.c shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

Provided are a semiconductor structure and a manufacturing method thereof according to embodiments of the present disclosure. The semiconductor structure includes: a carrier plate; light-emitting units on the carrier plate and lenses on a side of the light-emitting units away from the carrier plate. Each of the light-emitting units includes a first light-emitting structure, a second light-emitting structure and a third light-emitting structure, that are spaced apart on a surface of the carrier plate and respectively configured to emit light with different wavelengths, the second light-emitting structure surrounds the first light-emitting structure, and the third light-emitting structure surrounds the second light-emitting structure. The lenses respectively correspond to the light-emitting units, and the lenses are configured to converge light emitted by the light-emitting units and mix the colors of the light emitted by the light-emitting units.

A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial crystalline layer to enable strain relaxation in the second epitaxial crystalline layer by plastic deformation of bonds in the first epitaxial crystalline layer and/or at the interface between the first epitaxial crystalline layer and the second epitaxial crystalline layer; and forming one or more channels comprising a conductive material through at least the first epitaxial crystalline layer and the second epitaxial crystalline layer thereby to enable electrical connection to the crystalline template layer through the first epitaxial crystalline layer and the second epitaxial crystalline layer.

A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

A semi-continuous quantum well micro-LED array unit is disclosed. This unit includes a first block of LED pixels comprising a first LED pixel and a second LED pixel. The first and second LED pixels share a first common active region. The unit also includes a second block of LED pixels comprising a third LED pixel and a fourth LED pixel. These LED pixels share a second common active region that is isolated from the first common active region, such that the second common active region is continuously shared by the third and fourth LED pixels. The first block of LED pixels is located proximately to the second block of LED pixels. As a result of the second common active region being isolated from the first common active region, the first block of LED pixels is discrete relative to the second block of LED pixels.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding at least a side surface of the active layer. The first semiconductor layer has a diameter in a range of about 0.5 m to about 10 m, and the light emitting element has an external quantum efficiency greater than or equal to about 23%.

A display device includes an anode electrode disposed on a substrate; an insulating layer disposed on the substrate, the insulating layer covering an edge of the anode electrode, and the insulating layer having a first opening overlapping the anode electrode; a thin film layer disposed on the insulating layer, the thin film layer including a tip protruding toward the first opening, and the thin film layer having a second opening defined by the tip; a light-emitting layer disposed on the anode electrode, the light-emitting layer disposed inside of the first opening, and directly contacting the tip of the thin film layer; and a cathode electrode disposed over the light-emitting layer and the thin film layer.