H10H29/8508

SEMICONDUCTOR ELEMENT
20250386645 · 2025-12-18 ·

A semiconductor element is provided. The semiconductor element includes a substrate, a light-emitting diode chip, and an encapsulating layer. The substrate includes a bottom portion and an island-shaped protrusion, wherein the island-shaped protrusion is disposed on the bottom portion. The light-emitting diode chip is disposed on the island-shaped protrusion. The encapsulating layer is disposed on the light-emitting diode chip. The side surface of the island-shaped protrusion has a first roughness. The top surface of the island-shaped protrusion has a second roughness. The first roughness is different from the second roughness.

LIGHT-EMITTING ELEMENT PACKAGE AND DISPLAY DEVICE

A light-emitting element package can include a first layer having an oval shape, a first semiconductor light-emitting element group on the first layer, a first electrode pad group on the first layer, and a second electrode pad group on the first layer. The first layer can have a first region comprising an oval major axis, a second region contacting the first region on one side of the oval major axis, and a third region contacting the first region on the other side of the oval major axis. The first semiconductor light-emitting element group can be disposed on the first region and can include a plurality of semiconductor light-emitting elements. The first electrode pad group can be disposed on the second region and can include a plurality of electrode pads. The second electrode pad group can be disposed on the third region and can include a plurality of redundancy electrode pads.

PHOSPHOR CONVERTED LED LIGHT SOURCE COMPRISING UV LEDS WITH TAKING INTO ACCOUNT THE EXCITATION SPECTRUM OF THE PHOSPHOR
20250386632 · 2025-12-18 ·

The invention provides a light generating system (1000) comprising (a) a plurality of sets (150) of light generating devices (100) and (b) a luminescent material (200), wherein the light generating devices (100) are configured in an array (40); wherein the light generating devices (100) are configured to generate device light (101); wherein the light generating devices (100) comprise solid state light sources; wherein the plurality of sets (150) of light generating devices (100) comprises at least three sets (50) of light generating devices (100), wherein light generating devices (100) of different sets mutually differ in peak wavelengths of the device light (101), wherein a first set of first light generating devices (110) is configured to provide first device light (111) having a first peak wavelength (1) in the visible wavelength range, especially the blue wavelength range, a second set of second light generating devices (120) is configured to generate second device light (121) having a second peak wavelength (2) in the UV wavelength range or in the violet wavelength range, and a third set of third light generating devices (130) is configured to generate third device light (131) having a third peak wavelength (3) in the UV wavelength range or in the violet wavelength range; wherein the luminescent material (200) is configured downstream of the array (40) of light generating devices (100); wherein the luminescent material (200) is configured to convert at least part of the first device light (101) into luminescent material light (201); and wherein the luminescent material (200) is configured to convert at least part of the second device light and/or at least part of the third device light (101) into luminescent material light (201); wherein the luminescent material (200) has different excitation intensities at the different peak wavelengths (1, 2, 3); wherein the light generating devices (100) of the at least three sets (50) are configured according to increasing or decreasing excitation intensities of the luminescent material (200) for the different excitation intensities at the different peak wavelengths.

OPTOELECTRONIC SEMICONDUCTOR COMPONENTS
20250393372 · 2025-12-25 ·

An optoelectronic semiconductor component is provided. The optoelectronic semiconductor component includes a base, an electrical connection structure located on the base, a plurality of light-emitting chips located on the electrical connection structure, a plurality of wavelength converters located on the light-emitting chips, and a separation structure located on the electrical connection structure and covering the light-emitting chips and the wavelength converters. The base includes a base material and a plurality of conductor parts. The base material covers the conductor parts which penetrate the base material. The electrical connection structure includes an intermediate part and a plurality of metal parts The intermediate part covers the metal parts. A part of the conductor parts of the base extends into the electrical connection structure and are electrically connected to the metal parts of the electrical connection structure. The metal parts extend into the separation structure and are electrically connected to the light-emitting chips.

Lighting device and vehicle component comprising such a lighting device

A lighting device having a support supporting first light emitting diodes and second light emitting diodes each having a light emitting surface, wherein the light emitting surface of each first light emitting diode has a first area and the light emitting surface of each second light emitting diode has a second area, the second area being strictly lower than the first area.

OPTOELECTRONIC PACKAGE STRUCTURE
20260013303 · 2026-01-08 ·

An optoelectronic package structure includes at least one optoelectronic device, a lead frame, and an encapsulant. The optoelectronic device is disposed on the lead frame. The lead frame includes at least one lead unit that includes a first lead and a second lead. The first lead has a first bonding part and a first pin. The first bonding part has a first inclined sidewall at an upper end of one side away from the second lead. The second lead has a second pin and a carrying part, of which an upper end has a die-attaching region for carrying the optoelectronic device. The encapsulant covers at least the optoelectronic device, the first bonding part, and the carrying part.

MICRO LED ARRAYS ON GLASS SUBSTRATES FOR OPTICAL COMMUNICATIONS

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

SEMICONDUCTOR STRUCTURE
20260013310 · 2026-01-08 ·

A semiconductor structure includes packaging structures and a substrate. Each packaging structure includes a light-transmitting layer, micro-LED chips, a first insulating layer, redistribution layers, a second insulating layer, and conductive pieces. The micro-LED chips are on the light-transmitting layer and include an electrode surface and a light-emitting surface facing the light-transmitting layer. The first insulating layer is disposed on the light-transmitting layer and surrounds the micro-LED chips. The redistribution layers are disposed on the first insulating layer and pass through the first insulating layer to be electrically connected to the electrode surfaces. The second insulating layer is disposed on the first insulating layer. The conductive pieces are disposed on the second insulating layer, pass through the second insulating layer to be electrically connected to the redistribution layers, and are between the substrate and the micro-LED chips.

DISPLAY APPARATUS

A display apparatus is provided. The display apparatus comprises a substrate, one or more pixel driving circuits disposed on the substrate, a plurality of insulating layer disposed on the pixel driving circuit, a plurality of banks disposed on the plurality of insulating layers. A plurality of micro LEDs is disposed on the banks and electrically connected to the pixel driving circuit through a plurality of first electrodes, which are positioned between the banks and the micro LEDs. A plurality of signal lines is disposed below the banks so as to overlap the banks and directly contact the first electrodes. This configuration enables efficient signal transmission and improves pixel integration by reducing the interval between adjacent pixels. Additionally, by overlapping the banks with signal lines and avoiding routing between adjacent banks, electrical connection between signal lines carrying different signals is suppressed, thereby minimizing interference and improving circuit reliability.

LIGHT-EMITTING DIODE PACKAGE
20260020417 · 2026-01-15 ·

A light-emitting diode (LED) package is provided, which includes a plurality of LED units, an encapsulant, and a first light guide. The encapsulant covers the LED units and has a recessed portion. The recessed portion is between the LED units, and the encapsulant has a plurality of side surfaces surrounding the LED units and the recessed portion. The first light guide is disposed in the recessed portion of the encapsulant, wherein the first light guide has a top portion and a bottom portion, with the top portion having a larger area than the bottom portion. The first light guide includes a plurality of reflective surfaces between the top portion and the bottom portion, and each reflective surface corresponds to a respective LED unit to reflect a portion of the light emitted from the LED units toward the side surfaces of the encapsulant.