An embodiment relates to a method for forming by defocused lithography a stack including a photosensitive layer based on a photosensitive resin having scattering particles. The stack further includes at least one pattern defined at least partly by a curved lateral wall so that an intersection of the curved wall with a plane substantially perpendicular to the plane of main extension of the stack forms a curved line. An embodiment also relates to the creation of an optoelectronic device including the stack, wherein the at least one pattern is at least one cavity at least partly defined by the curved lateral wall, and at least one light-emitting diode disposed in the at least one cavity.

A method for manufacturing a light-emitting device includes: preparing an intermediate body including: a substrate, and a plurality of light-emitting elements disposed on the substrate, each including a first surface serving as a light extraction surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface; applying a powder composition including a reflective member and a silicone resin powder from above the first surfaces of the plurality of light-emitting elements through a sieve to locate the powder composition on the substrate and between the lateral surfaces of the plurality of light-emitting elements; and forming a first covering member by applying vibration to the powder composition and subsequently applying pressure in a thickness direction of the substrate to perform compression molding.

The present application relates to a quantum dot ink, a quantum dot layer patterning method, and a quantum dot optoelectronic device. The quantum dot ink contains a quantum dot material; a cross-linking agent and a photoacid generator, wherein the quantum dot material comprises quantum dots and an organic ligand on surfaces of the quantum dots, the organic ligand comprises a crosslinking unit and a coordination functional group coordinated with the quantum dots, the crosslinking unit in the organic ligand can be subjected to a cross-linking reaction with a polyhydroxy compound cross-linking agent under the catalysis of hydrogen ions generated via the photoacid generator under ultraviolet irradiation. By means of the quantum dot ink, since photocrosslinking molecules directly participate in patterning of a quantum dot layer, there is no need to wash away a photoresist sacrificial layer compared to existing photoresist patterning methods, so that the process flow is greatly simplified.

A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.

Disclosed are a micro-display chip and a preparation method thereof. The micro-display chip includes: a self-luminescence layer, a wavelength conversion layer, and a first transmitting-and-reflecting layer and/or a second transmitting-and-reflecting layer; the first transmitting-and-reflecting layer is disposed between the self-luminescence layer and the wavelength conversion layer; the second transmitting-and-reflecting layer is disposed on another surface of the wavelength conversion layer; the first transmitting-and-reflecting layer has low reflectivity and high transmissivity for the first color light and high reflectivity and low transmissivity for the second color light, and the second transmitting-and-reflecting layer has high reflectivity and low transmissivity for the first color light and low reflectivity and high transmissivity for the second color light. The micro-display chip of the present disclosure can effectively improve the absorbance and color purity of conversion light, thereby obtaining a brighter and purer conversion spectrum.

Provided is a display panel. The display panel includes a base substrate, a light-emitting layer, a package layer, and a light conversion layer that are successively stacked. The light conversion layer includes a plurality of light conversion units arranged in an array and a plurality of micro-mirror structures. The plurality of light conversion units include a plurality of first light conversion units, and the plurality of micro-mirror structures include a plurality of first micro-mirror structures surrounding the first light conversion units. Each of the first micro-mirror structures is configured to reflect at least a portion of light from an interior of each of the first light conversion units.

Disclosed are a Micro LED micro-display chip and a manufacturing method thereof. The Micro LED micro-display chip includes a driver panel; multiple LED units arranged on the driver panel, wherein the multiple LED units includes multiple LED mesas in a one-to-one correspondence with the multiple LED units, and each of the LED units is independently drivable by the driver panel; a grid structure having multiple grid holes, wherein the multiple grid holes are respectively provided around the multiple LED mesas, and recess areas are formed between the LED mesas and the respective grid holes; a wavelength conversion layer provided on the grid structure, including multiple first wavelength conversion units filling the corresponding recess areas and configured to convert the first color light emitted by the LED units into second color light.

A fabrication method for a crosstalk-proof structure of an integrated colored Micro LED whereby a side, away from a base layer, of an integrated Micro LED chip with a common N electrode is covered with a black adhesive layer, the black adhesive layer is etched, and electrodes of the Micro LED chip are exposed, so that optical crosstalk between gallium nitride Mesas can be avoided; and a base layer is stripped, and N-type gallium nitride layers of a first Micro LED chip module are isolated, so that the N-type gallium nitride layers can be isolated by the black adhesive layer to avoid optical crosstalk inside an N-type gallium nitride material of a common N-type chip and optical crosstalk of the base part. In such a way, the problem of optical crosstalk on an LED light emitting optical path can be avoided.

A display panel is disclosed. The display panel comprises: a substrate divided into a plurality of pixel areas; a plurality of main light-emitting elements and an auxiliary light-emitting element mounted in each of the plurality of pixel areas; and a color conversion layer stacked on the plurality of main light-emitting elements and the auxiliary light-emitting element, wherein the color conversion layer is configured such that light emitted from the auxiliary light-emitting element passes through the color conversion layer and, as a result, has a first color corresponding to a defective first main light-emitting element among the plurality of main light-emitting elements.

Provided is a manufacturing method for a light-emitting device that can improve yield during manufacturing while achieving wide-angle light distribution. A manufacturing method for a light-emitting device includes: a preparing step of preparing a substrate having an upper surface on which a plurality of light-emitting elements are disposed, each of the plurality of light-emitting elements including a light-emitting layer; a phosphor layer forming step of forming a phosphor layer by pouring a first precursor made of a resin in which phosphor particles are dispersed onto the upper surface of the substrate and heat-curing the poured first precursor, the phosphor layer encompassing the plurality of light-emitting elements; a trench forming step of forming a trench on an upper surface of the phosphor layer to separate each of the light-emitting elements in a top view from a direction perpendicular to the upper surface; a sealing layer forming step of forming a sealing layer by pouring a second precursor made of a translucent resin onto the upper surface of the phosphor layer and heat-curing the poured second precursor; a transmissive-reflective layer forming step of forming a transmissive-reflective layer on the sealing layer, the transmissive-reflective layer partially reflecting and partially transmitting each of a light emitted from the light-emitting layer and a fluorescence emitted from the phosphor layer; and an individualizing step of individualizing the light-emitting device by cutting from an upper surface of the transmissive-reflective layer to the substrate along the trench in depth direction.