A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.

A wavelength conversion device and a manufacturing method thereof are provided. The wavelength conversion device includes a wavelength conversion module including a carrier, a first light-blocking layer, a second light-blocking layer, a filter layer, a wavelength conversion layer, and a protective layer. The carrier has a first surface and a second surface opposite the first surface. The first light-blocking layer is disposed on the first surface and has a first opening. The second light-blocking layer is disposed on the second surface and has a second opening. The filter layer is disposed on the second surface and in the second opening. The wavelength conversion layer is disposed on the filter layer. The protective layer is disposed on the second light-blocking layer. The width of the second opening of the second light-blocking layer is greater than the width of the first opening of the first light-blocking layer.

A manufacturing method includes providing a first substrate including a circuit layer and an electronic element disposed on the circuit layer, providing a second substrate, bonding the first substrate and the second substrate to form an electronic module, cutting the electronic module, forming a wire on a first surface exposed after cutting the electronic module and on a second surface of the electronic module, wherein the first surface is adjacent to the second surface and the wire is electrically connected to the circuit layer, and disposing a driving element on the second surface of the electronic module to be electrically connected to the wire.

A light-emitting diode structure and a manufacturing method thereof are provided. The light-emitting diode structure includes a substrate, multiple light-emitting diode units, and a reflective layer. The light-emitting diode units are arranged in arrays on the substrate. Each of the light-emitting diode units includes a light-emitting diode chip, a wavelength conversion layer, and a short-pass filter coating. The light-emitting diode chip is disposed on the substrate in a flip-chip manner. The wavelength conversion layer is disposed on the light-emitting diode chip. The short-pass filter coating is disposed between the wavelength conversion layer and the light-emitting diode chip. The reflective layer is filled in a gap between the light-emitting diode chips of the light-emitting diode units and is disposed on a side surface of the light-emitting diode chips.

The invention relates to a light-converting optoelectronic device comprising light-emitting diodes and conversion pads (40). Spacer portions (23) that are conductive and transparent, are located between the reflective portion (22) and the lower conductive portion (31) of the converting luminous pixels (Px.sub.ac) only or of the non-converting luminous pixels (Px.sub.sc) only. Moreover, the thickness (e.sub.31.opt) of the lower conductive portions (31) and the thickness (e.sub.23.opt) of the spacer portions (23) are predefined so as to maximize: in the non-converting luminous pixels (PX.sub.sc), an extraction efficiency of the emitted light from the light emitting diode; and in the converting luminous pixels (PX.sub.ac), a coupling efficiency of the light emitted by the active portion (32) with optical modes supported in the conversion portion (40).

A display module includes: a substrate, a first dielectric layer, a second dielectric layer and a plurality of color filters. The substrate is disposed with a plurality of light-emitting diodes (LEDs) thereon. The LEDs have a non-smooth upper surface. The first dielectric layer is located on the substrate and surrounding the LEDs. The first dielectric layer is filled between the substrate and the second dielectric layer, and a refractive index of the second dielectric layer is greater than a refractive index of the first dielectric layer. The color filters are located on a side of the second dielectric layer opposite to the first dielectric layer.

A light emitting device includes a backplane, first, second and third light emitting diodes located on the backplane, a first patterned metamaterial lens containing first nanostructures located over the first light emitting diode, a second patterned metamaterial lens containing second nanostructures located over the second light emitting diode, and a third patterned metamaterial lens containing third nanostructures located over the light emitting diode. A configuration of the first nanostructures differs from a configuration of the second nanostructures, and a configuration of the third nanostructures differs from the configurations of the first and the second nanostructures.

A display panel including a first substrate, a second substrate, a first bank structure, a second bank structure, a light-emitting element, and a color conversion pattern is provided. The first bank structure is disposed on the first substrate. The second bank structure is disposed on the second substrate. The light-emitting element is disposed in a first accommodation space defined by the first bank structure. The color conversion pattern includes a first portion and a second portion overlapping each other and separated from each other. The first portion is disposed on the first substrate and covers the light-emitting element. The second portion is disposed on the second substrate and located in a second accommodation space defined by the second bank structure. In a direction perpendicular to a stacking direction of the two substrates, a second width of the second portion is less than a first width of the first portion.

A quantum-dot light conversion film, a preparation method and an application thereof and an anti-ultraviolet blue-free yellow light for chip manufacturing are provided. The preparation method includes: (1) mixing a quantum-dot concentrate with an acrylic monomer, then adding high polymer for secondary mixing, to obtain a polymer; (2) after mixing the polymer and nanoparticles, adding additives for dispersion to obtain a light conversion liquid resin; and (3) coating and curing the light conversion liquid resin to obtain a quantum-dot light conversion film. The light conversion film has high light conversion efficiency, adjustable emission peak position and narrow half peak width. Its surface forms a tightly arranged high refractive index microlens structure. When the light reaches the microlens array, as the light output surface is a lens structure and the refractive index is improved, more light is emitted in the positive direction, thereby effectively improving the light output rate.

A method for manufacturing a light-emitting device includes: providing a structure including: a plurality of light-emitting elements each having a light-emitting surface, and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements; disposing, on the structure, a mask member covering the support member between the plurality of light-emitting elements, the mask member defining a plurality of openings each positioned above a corresponding one of the light-emitting surfaces of the plurality of light-emitting elements; disposing a plurality of wavelength conversion members in the plurality of openings; and after disposing the plurality of wavelength conversion members, removing the mask member and the support member between the plurality of light-emitting elements.