A semiconductor device includes a semiconductor layer having first and second principal surfaces, an insulated gate bipolar transistor (IGBT) region formed in the semiconductor layer, and a diode region formed adjacent to the IGBT region in a first direction. A plurality of gate trenches are arranged in the IGBT region and extend in a second direction intersecting the first direction. Each trench includes a gate conductive layer embedded through a gate insulating layer, and unit cells are defined between adjacent trenches. An emitter region is formed on the first principal surface of each unit cell. The emitter region of a unit cell located closer to the diode region has a smaller area than the emitter region of a unit cell located farther from the diode region.

Provided is a semiconductor device which includes a diode portion, the semiconductor device includes: a drift region of a first conductivity type which is provided in a semiconductor substrate; a plurality of trench portions which extend in a predetermined trench extending direction on a front surface side of the semiconductor substrate; and a front-surface electrode portion which is provided above a front surface of the semiconductor substrate, the diode portion includes a plug region of a second conductivity type which is provided in the semiconductor substrate and in contact with the front-surface electrode portion, and a first conductivity type mesa region of the first conductivity type which is in contact with the plug region in a mesa portion between the plurality of trench portions.

Provided is a semiconductor device including: an emitter electrode which is provided above an upper surface of a semiconductor substrate; and a first active gate runner which is provided above the upper surface of the semiconductor substrate so as to be sandwiched between the emitter electrodes and extend in a first direction, in which the first active gate runner includes two or more separation parts arranged with at least one spacing portion sandwiched therebetween in the first direction, the emitter electrode includes a bridge portion arranged in the spacing portion, and at least one of trench portions provided in a diode portion extends below the bridge portion.

A semiconductor device includes first and second electrodes, a semiconductor part, a gate electrode, and a first part that is insulative. The first and second electrodes are located in first, second, and third regions. The semiconductor part is located between the first electrode and the second electrode. The gate electrode is located in the semiconductor part in the first region. The first part is located on the first electrode in the third region. The first region is an IGBT region. The second region is a diode region. The third region separates the first region and the second region between the first region and the second region. In the third region, a bottom surface of the first part contacts the first electrode; an upper surface of the first part contacts a fourth semiconductor layer; and a side surface of the first part contacts a third semiconductor layer.

A semiconductor device includes: a drift layer of a first conductivity-type provided in an active area and an edge termination area surrounding the active area; a base region of a second conductivity-type provided on a top surface side of the drift layer in the active area; a main region of the first conductivity-type provided on a top surface side of the base region; and an insulated gate electrode structure provided in contact with the main region and the base region, wherein an effective carrier concentration in the base region is relatively high in a middle part of the active area and is relatively low in a circumferential part of the active area, and a depth of a peak concentration in the base region is deeper than a bottom surface of the main region.

The present disclosure relates to a semiconductor device, such as a Reverse Conducting Insulated Gate Bipolar Transistor (RC-IGBT), and method of ion implementation in a semiconductor device, especially implementation of light ion particles.

A semiconductor device is proposed, including a semiconductor structure layer and a metal electrode on at least one surface of the semiconductor layer, wherein the metal electrode includes at least one thin metal electrode section and at least one thick metal electrode section. Preferably the at least one thin metal electrode section has a thickness of 4 to 7 m and the at least one thick metal electrode section has a thickness of 9 to 14 m.

A semiconductor device includes a plurality of trenches formed on a first main surface of a semiconductor substrate, and insulating films and electrodes formed in the plurality of trenches. The plurality of trenches include a first trench and a second trench deeper than the first trench and wider than the first trench. A bottom layer of a second conductivity type, in contact with a bottom of the second trench and not in contact with the first trench, is disposed under the second trench.

Provided is a semiconductor device including a transistor portion and a diode portion, the semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; and trench portions extending in a predetermined trench extension direction, wherein the transistor portion has a base region of a second conductivity type, emitter regions of the first conductivity type discretely provided in a trench extension direction, each having a higher doping concentration than the drift region, a contact region of the second conductivity type having a higher doping concentration than the base region, a trench contact portion extending from a front surface of the semiconductor substrate in a depth direction, in a mesa portion between two adjacent trench portions, and a thinning region provided between two adjacent emitter regions in the trench extension direction, and having a lower doping concentration of the second conductivity type than the contact region.

A trench-gate planar-gate semiconductor device with monolithically integrated Schottky barrier diode and Junction Schottky barrier diode, where the semiconductor device includes at least one semiconductor cell. The semiconductor cell includes: a substrate arranged at a bottom surface of the semiconductor cell; a vertical channel section placed above the substrate; a planar channel section formed above the substrate and below a trench that is formed on both sides of the vertical channel section; a Schottky section placed above the substrate; and a Junction Schottky section placed above the substrate. The vertical channel section and the Schottky section are placed in a mesa section of the semiconductor device along a first direction parallel to the bottom surface. The planar channel section and the Junction Schottky section are placed below the trench along the first direction parallel to the bottom surface.

A semiconductor device, including: a semiconductor substrate having a main surface; an interlayer insulating film provided on the main surface of the semiconductor substrate; a contact hole penetrating through the interlayer insulating film to reach the semiconductor substrate; a plug electrode embedded in the contact hole; a first barrier metal provided on the interlayer insulating film, the first barrier metal being apart from the plug electrode; and a front electrode provided on the first barrier metal and the plug electrode.