A method for manufacturing a light-emitting device includes providing a structure body. The structure body includes a wiring substrate, a light-emitting element, and a protection element. The wiring substrate includes a wiring part at an upper surface of the wiring substrate. The light-emitting element includes a pair of first electrodes, a first semiconductor layer, and a first element substrate. The protection element includes a pair of second electrodes, a second semiconductor layer, and a second element substrate. The pair of first electrodes and the pair of second electrodes face the upper surface of the wiring substrate. The pair of first electrodes and the pair of second electrodes are connected to the wiring part. The method includes removing at least a portion of the first element substrate of the light-emitting element and at least a portion of the second element substrate of the protection element from the structure body.

A panel substrate includes a mother substrate having a plurality of cell regions and a peripheral region surrounding the plurality of cell regions. A protective layer is disposed under the mother substrate. The protective layer includes a plurality of main parts overlapping the plurality of cell regions, and a plurality of bridge patterns overlapping the peripheral region. The plurality of bridge patterns connecting main parts adjacent to each other among the plurality of main parts.

A display device may include a substrate, a plurality of light emitting elements disposed on the substrate and generating light, and a bank portion disposed on the substrate, protruding from the substrate, and adjacent to at least one of the plurality of light emitting elements. The plurality of light emitting elements may include a first light emitting element generating light of a first color and including an inorganic material, and a second light emitting element generating light of a second color different from the first color, the second light emitting element may include an organic material, and the bank portion may be disposed between the first light emitting element and the second light emitting element.

A display device includes a substrate including a first surface, a second surface, and a side surface between the first surface and the second surface, a pixel circuit layer on the first surface and the side surface of the substrate and including a transistor, and a light emitting element on the pixel circuit layer and electrically connected to the transistor, wherein the side surface of the substrate has an inclination.

A method of manufacturing a light-emitting device includes: providing a substrate, providing a light-emitting structure containing a plurality of solid-state light sources disposed on the substrate, and providing a hybrid encapsulation film for encapsulating the light-emitting structure. The hybrid encapsulation film includes a B-stage light-transmitting layer having a front surface and a back surface and a plurality of first reflective layers disposed at intervals on the front surface of the B-stage light-transmitting layer. The method further includes: laminating the back surface of the B-stage light-transmitting layer of the hybrid encapsulation film toward the solid-state light sources of the light-emitting structure, so that the solid-state light sources are embedded in the B-stage light-transmitting layer and correspond to the positions of the first reflective layers, and performing a thermal process to cure the hybrid encapsulation film.

A packaging structure and a formation method thereof are provided. The packaging structure includes a base, a semiconductor element, a wrap layer, a cap layer, and an electrical connecting structure. The wrap layer is disposed on the base, covers the semiconductor element, and exposes the top surface of the semiconductor element. The cap layer is disposed on the wrap layer and the semiconductor element and includes a first and a second part. The first part is in contact with the semiconductor element. The second part is in contact with the wrap layer, wherein in measurement results of Fourier transform infrared spectroscopy, the ratio between maximum intensities at wavenumbers of 1060 cm.sup.1 to 1080 cm.sup.1 and 780 cm.sup.1 to 800 cm.sup.1 of the second part is greater than 0.65. The electrical connecting structure passes through the base and the wrap layer to electrically connect to the semiconductor element.

A display device may include a display panel including at least one area that is curved, and a clad layer disposed under the display panel and overlapping the curved area of the display panel, the clad layer having multiple metal layers including different metals clad bonded to each other, and a surface of the clad layer adjacent to the display panel overlaps an entirety of the display panel.

A packaging structure and method for packaging are provided. The packaging structure includes a substrate, a plurality of light-emitting elements, and a composite film. The light-emitting elements are disposed on the substrate, and the composite film is disposed on the substrate, covering the light-emitting elements. The composite film includes a first layer and a second layer. The first layer includes a first thermoplastic material, wherein the melt flow rate (MFR) of the first thermoplastic material is R1, and the first thermoplastic material is an ethylene-propylene copolymer, polyethylene terephthalate, or a combination thereof. The second layer includes a second thermoplastic material, wherein the melt flow rate (MFR) of the second thermoplastic material is R2, and 11(R1R2)11. The second thermoplastic material is a styrene-ethylene-butylene-styrene block copolymer, an ethylene-vinyl acetate copolymer (EVA), or a combination thereof.

This application relates to a light-emitting device and a manufacturing method thereof, comprising a substrate, a plurality of light-emitting chips arranged on the front side of the substrate, and an encapsulation layer disposed on the substrate to cover each light-emitting chip. The encapsulation layer allows light emitted by the LED chips to pass through.

In an embodiment a method for producing at least one optoelectronic device includes providing a substrate body, providing a substrate frame on the substrate body, wherein the substrate frame comprises at least one recess, providing at least one optoelectronic component on the substrate body, wherein the substrate frame and the at least one optoelectronic component are placed in relation to one another such that the at least one optoelectronic component is arranged in the at least one recess and providing a filler material in the at least one recess such that the at least one optoelectronic component is covered by the filler material, wherein the filler material is provided by a casting process.