A method is provided for forming a thin film resistor (TFR) and a thin film MIM capacitor (TFMIMCAP) in an integrated circuit (IC) device. A method comprises: forming a thin film layer over an integrated circuit (IC) structure; annealing the thin film layer; and forming first and second thin film elements in the thin film layer. An integrated circuit device comprises: an integrated circuit (IC) structure; an annealed thin film layer above the IC structure; and first and second thin film elements in the thin film layer.

A memory includes a substrate, a plurality of memory arrays, a filling structure, and an isolation spacer. The memory array includes a plurality of memory cells. Each memory cell includes a transistor and at least one capacitor that are stacked, and the at least one capacitor is electrically connected to a side of the transistor distal from the substrate. The filling structure is disposed between transistors of two adjacent memory arrays. The isolation spacer is disposed on a side of the filling structure distal from the substrate and in a direction parallel to the substrate positioned between capacitors of the two adjacent memory arrays.