A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the semiconductor body. A control structure electrically connects a recombination region to the drift zone during a desaturation cycle and disconnects the recombination region from the drift zone outside the desaturation cycle. During the desaturation cycle the recombination region reduces a charge carrier plasma in the drift zone and reduces reverse recovery losses without adversely affecting blocking characteristics.