In one aspect, the disclosure relates to micro-LED based AR displays combining stacked red, green, and blue LEDs, distributed Bragg reflectors, and diffractive optics; methods of making the same; and augmented reality displays using the same. In one aspect, the light generated by the LEDs is reflected within the optical cavity of DBR/LED/DBR, creating a highly directional (5) and monochromatic (FWHM5nm) blue light. In an aspect, the luminance of the disclosed inorganic-based micro-LEDs is orders of magnitude higher than that of organic LEDs while also providing high directionality and monochromaticity, leading to higher image quality. In a further aspect, the small size of the disclosed light source and combiner allows a much more compact and light-weight AR device to be constructed.

A display apparatus including a panel, a substrate disposed on the panel and having a first surface and a second surface opposing each other, a light shielding layer disposed on the second surface of the substrate, a plurality of nitride semiconductor layers directly disposed on the first surface of the substrate and defining a light emitting area, and a plurality of pads disposed on the nitride semiconductor layers, in which the light shielding layer has a thickness greater than a length of the longest wavelength among wavelengths of light generated from the light emitting area, and an upper surface of the light shielding layer has a concaved surface.

A semiconductor device is provided, which includes a base, a semiconductor stack located on the base, and a first semiconductor layer located on the semiconductor stack. The semiconductor stack includes a first semiconductor structure adjacent to the base, a second semiconductor structure located on the first semiconductor structure, and a first active region located between the first semiconductor structure and the second semiconductor structure. The first semiconductor layer is located on the second semiconductor structure, and includes Al.sub.x1Ga.sub.1x1As, where 0.005x1<0.2. And the first semiconductor structure has a second thickness in a range of 3 m to 8 m. The semiconductor device outputs a first power corresponding to a light with a wavelength equal to or larger than 900 nm and less than 1100 nm, and a second power corresponding to a light with a wavelength less than 900 nm and larger than 700 nm. A ratio of the second power to a sum of the first power and the second power is equal to or less than 30%.

Disclosed is a light emitting module including a substrate and at least one light emitting unit disposed on a surface of the substrate. The light emitting module comprises a seating guide layer disposed on a surface of the substrate and having an open hole forming a seating region in which the light emitting unit is seated, wherein a width of the open hole in a first direction is greater than a length of a side of the light emitting unit in the first direction.

A light-emitting element includes: a first light-emitting portion includes, in order upward from a lower side, a first n-side layer, a first active layer, and a first p-side layer disposed, each made of a nitride semiconductor; an intermediate layer disposed over the first light-emitting portion and made of a nitride semiconductor including an n-type impurity; and a second light-emitting portion disposed over the intermediate layer and comprising, in order upward from a lower side, a second n-side layer, a second active layer, and a second p-side layer, each made of a nitride semiconductor. An n-type impurity concentration in the intermediate layer is greater than an n-type impurity concentration in the first n-side layer. The first p-side layer includes: a first layer including aluminum and gallium, and a second layer disposed above the first layer, including aluminum and gallium.

A light emitting element includes a light emitting stack, an auxiliary electrode covering a lower surface of the light emitting stack, a first insulation film covering an outer peripheral surface of the light emitting stack and the auxiliary electrode and including a first opening exposing a portion of a lower surface of the auxiliary electrode, a second insulation film covering an outer peripheral surface of the first insulation film, exposing an upper surface of the first insulation film, and including a second opening exposing the first opening, a first electrode electrically contacting the portion of the lower surface of the auxiliary electrode that is exposed by the first and second openings, and a second electrode embedded in the first insulation film and electrically contacting an upper surface of the light emitting stack.

A display device includes a cathode disposed on a pixel circuit layer, a first anode, a first light-emitting element including a first emission stack, a first anode connection electrode, a first cathode connection electrode, an adhesive layer disposed between the first anode and the first anode connection electrode and between the cathode and the first cathode connection electrode, a first anode bridge electrode in contact with the first anode and the first anode connection electrode, and a cathode bridge electrode in contact with the cathode and the first cathode connection electrode. A planarization layer forming an uppermost layer of the pixel circuit layer includes a first anode undercut formed along an edge of the first anode between the planarization layer and a lower surface of the first anode, and a cathode undercut formed along an edge of the cathode between the planarization layer and a lower surface of the cathode.

A LED structure includes a first color light-emitting unit, a second color light-emitting unit, a third color light-emitting unit and an optical bonding layer. The first color light-emitting unit and the second color light-emitting unit are located in the same layer and on a light emission side of the third color light-emitting unit. The optical bonding layer is located between the first color light-emitting unit and the third color light-emitting unit and between the second color light-emitting unit and the third color light-emitting unit and is configured to bond the first color light-emitting unit to the third color light-emitting unit and bond the second color light-emitting unit to the third color light-emitting unit. The optical bonding layer is configured to transmit light from the third color light-emitting unit and reflect light from the first color light-emitting unit and the second color light-emitting unit to the light emission side.

A display apparatus including a panel, a substrate disposed on the panel and having a first surface and a second surface opposing each other, a light shielding layer disposed on the second surface of the substrate, a plurality of nitride semiconductor layers directly disposed on the first surface of the substrate and defining a light emitting area, and a plurality of pads disposed on the nitride semiconductor layers, in which the light shielding layer has a thickness greater than a length of the longest wavelength among wavelengths of light generated from the light emitting area, and an upper surface of the light shielding layer has a concaved surface.

A light emitting device according to an exemplary embodiment includes a first light emission region and a second light emission region. The first and second light emission regions include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active region formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, an area of the first light emission region is larger than an area of the second emission region, and at least one of the first emission region or the second emission region emits light of a plurality of peak wavelengths.