Patent classifications
H10D30/674
Thin Film Transistor Substrate and Display Device Comprising the Same
A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR
A display apparatus can include a substrate, a pixel driving circuit on the substrate, and a light emitting device connected to the pixel driving circuit. The pixel driving circuit comprises a first thin film transistor, a second thin film transistor, and a third thin film transistor. The first thin film transistor comprises a first active layer and a first gate electrode. The second thin film transistor comprises a second active layer and a second gate electrode. The third thin film transistor comprises a third active layer and a third gate electrode, and the first active layer and the third active layer are disposed under the second active layer.
SEMICONDUCTOR DEVICE HAVING A LATERAL CONDUCTIVE LINE INCLUDED LOW AND HIGH WORK FUNCTION ELECTRODES
A semiconductor device includes: a lateral layer spaced apart from a lower structure and extending in a direction parallel to the lower structure; a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the lateral layer; a data storage element coupled to a second-side end of the lateral layer; and a lateral conductive line extending in a direction crossing the lateral layer, wherein the lateral conductive line includes: a first work function electrode; a second work function electrode disposed adjacent to the vertical conductive line and having a lower work function than the first work function electrode; and a third work function electrode disposed adjacent to the data storage element and having a lower work function than the first work function electrode.
DRIVING SUBSTRATE WITH OVERLAPPED METAL LAYERS AND SEMICONDUCTOR LAYER
A driving substrate is provided. The driving substrate includes a substrate and a first metal layer disposed thereon. The first metal layer has a first portion, a second portion, and a third portion, in a top view, the first portion and the second portion are arranged along a first direction, and the third portion extends along the first direction and is connected between the first portion and the second portion. In a second direction perpendicular to the first direction, a width of the third portion is less than both a width of the first portion and a width of the second portion. The driving substrate includes a second metal layer disposed on the substrate and overlapped with the first portion and the second portion; and a semiconductor disposed on the substrate. The first metal layer, the second metal layer, and the semiconductor are overlapped with each other.
Thin film transistor substrate and display device comprising the same
A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.
TRANSISTOR, METHOD OF MANUFACTURING TRANSISTOR, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR
A transistor includes a gate electrode, a semiconductor layer located on the gate electrode, a gate insulating layer located between the gate electrode and the semiconductor layer, an electrode layer including a source electrode and a drain electrode spaced apart from each other on the semiconductor layer, and an intermediate layer located between the semiconductor layer and the electrode layer, and including interlayer patterns respectively overlapping the source electrode and the drain electrode.