Various embodiments of an interconnect device and modules and systems that utilize such interconnect device are disclosed. In one or more embodiments, the interconnect device can include a printed circuit board (PCB). The PCB can include a substrate forming a resiliently deflectable element, a conductive material disposed on the substrate, and an electrical contact disposed on the resiliently deflectable element and electrically coupled to the conductive material. The interconnect device can also include a connector that includes a connecting pin configured to electrically couple with the electrical contact of the resiliently deflectable element of the PCB and cause the resiliently deflectable element to deflect when the element contacts the connecting pin.

An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

A piezoelectric film laminated body includes a metal film, an amorphous film, and a scandium aluminum nitride film. The amorphous film has an insulation property and is disposed on the metal film. The scandium aluminum nitride film is disposed on the amorphous film and is in contact with a surface of the amorphous film.

Various embodiments of an interconnect device and modules and systems that utilize such interconnect device are disclosed. In one or more embodiments, the interconnect device can include a printed circuit board (PCB). The PCB can include a substrate forming a resiliently deflectable element, a conductive material disposed on the substrate, and an electrical contact disposed on the resiliently deflectable element and electrically coupled to the conductive material. The interconnect device can also include a connector that includes a connecting pin configured to electrically couple with the electrical contact of the resiliently deflectable element of the PCB and cause the resiliently deflectable element to deflect when the element contacts the connecting pin.

An energy harvester includes a frame having a base, a first side member affixed to the base, and a second side member affixed to the base and spaced apart from the first side member. A beam is coupled between the first side member of the frame and the second side member of the frame. The beam has a substrate layer with a first end affixed to the first side member of the frame, a second end affixed to the second side member of the frame, a first face, and a second face opposite to the first face. The substrate is elastically deformable in response to the vibratory force. The beam further includes a first piezoelectric layer joined to the first face of the substrate layer and having a terminal for electrical connection to a load, the first piezoelectric layer comprising at least one piezoelectric patch.

A crystal oscillator (101) includes: a piezoelectric resonator plate (2) on which a first excitation electrode and a second excitation electrode are formed; a first sealing member (3) covering the first excitation electrode of the piezoelectric resonator plate (2); a second sealing member (4) covering the second excitation electrode of the piezoelectric resonator plate (2); and an internal space (13) formed by bonding the first sealing member (3) to the piezoelectric resonator plate (2) and by bonding the second sealing member (4) to the piezoelectric resonator plate (2), so as to hermetically seal a vibrating part including the first excitation electrode and the second excitation electrode of the piezoelectric resonator plate (2). An electrode pattern (371) including a mounting pad for wire bonding is formed on an outer surface (first main surface (311)) of the first sealing member (3).

A bonded body having a supporting substrate and piezoelectric material layer is provided. The supporting substrate is composed of mullite, and the material of the piezoelectric material layer is LiAO.sub.3 where A represents one or more element selected from the group consisting of niobium and tantalum. An interface layer is present along an interface between the supporting body and piezoelectric material layer, and a supporting substrate-side intermediate layer is present between the interface layer and supporting substrate. Each of the interface layer and supporting substrate-side intermediate layer contains oxygen, aluminum, silicon and one or more element selected from the group consisting of niobium and tantalum as main components.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

The present disclosure provides a method for forming piezoelectric films on surfaces of arbitrary morphologies. The method includes providing a sol for forming the piezoelectric film; spraying the sol onto the surface thereby forming a liquid film containing the sol on the surface; wiping the liquid film with a flattening tool for flattening the liquid film; drying the flattened liquid film thereby forming a gel layer; and annealing the gel layer thereby forming the piezoelectric film. The piezoelectric films with high uniformity and desired thickness can be formed on curved and even wrinkled surfaces by the present method.

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.