An object of the present invention is to improve the piezoelectricity of a PVT having the VDF ratio of 82 to 90% represented by a copolymer, in which copolymerization of vinylidene fluoride VDF and trifluoroethylene TrFe is 85 versus 15 (this is written as PVT85/15, and which is excellent in resistance to deformation, and heat resistance, etc. And therefore, it is also to obtain a piezoelectric film having piezoelectricity exceeding a PVT of less than 82 mol % of VDF represented by a PVT75/25, which conventionally shows the highest piezoelectricity, and a method of producing the same. A piezoelectric film is made of a mixture of two kinds (for example, a first copolymer is PVT85/15 and a second copolymer is PVT75/25) having different polymerization ratios of vinylidene fluoride VDF and trifluoroethylene TrFE.

A piezoelectric sensor includes: a lower substrate; a plurality of sensing transistors that are disposed on the lower substrate; a lower electrode that is disposed to cover the plurality of sensing transistors; a piezoelectric material layer that is disposed on the lower electrode; and an upper electrode that is disposed on the piezoelectric material layer. The piezoelectric material layer has a first thickness in a plurality of first areas in which the plurality of sensing transistors are disposed and has a second thickness which is greater than the first thickness in a second area in which the plurality of sensing transistors are not disposed. Accordingly, it is possible to further accurately and finely detect various types of biometric information.

A microfluidic-based device and system is disclosed for the high-throughput intracellular delivery of biomolecular cargo to cells (eukaryotic or prokaryotic) or enveloped viruses. Cargo integration occurs due to transient membrane permeabilization by exposure to bulk acoustic waves (BAWs) transduced from surface acoustic waves (SAWs) generated by a rapidly oscillating piezoelectric substrate. In this approach, temporary pores are established across the cellular membrane as cells are partially deformed and squeezed or subject to shearing forces as they travel through the vibrational modes created within the microfludic channel(s) of the device.

A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.

A stacked film includes an oxide film including a ZrO.sub.2 film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

The present invention relates, in general terms, to piezoelectric thin films with an empirical formula (K.sub.1xNa.sub.x).sub.yNbO.sub.3, wherein 0≤x≤1 and 0.64≤y≤0.95. In particular, the piezoelectric thin film comprises at least two adjacent NbO.sub.2 planes in an antiphase boundary, the at least two adjacent NbO.sub.2 planes displaced from each other by about half a lattice length in either the (100), (010) or (100) crystallographic plane. The present invention also relates to methods of fabricating the piezoelectric thin films.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate including a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a mirror index of a crystal plane of an upper surface of the SOI layer is equal to a mirror index of a crystal plane of an upper surface of the base substance. The buffer film includes ZrO.sub.2 epitaxially grown on the substrate.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.

A piezoelectric device includes a substrate that is flexible and thermally deformable, and a composite piezoelectric body disposed on the substrate. Output in accordance with deformation of the composite piezoelectric body is obtained. The composite piezoelectric body includes a piezoelectric layer containing an organic binder containing piezoelectric particles, a first electrode layer stacked on a first surface side of the piezoelectric layer, and a second electrode stacked on a second surface side of the piezoelectric layer. The substrate is insert molded and integrated with a molded resin body having a curved shape.