The present application provides a method for verification of conductivity type of a silicon wafer. The method comprises measuring the resistivity of the silicon wafer to obtain a first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period, measuring the resistivity of the silicon wafer to obtain a second resistivity, and determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity. The method can be applied to a silicon wafer having a high resistivity such as higher than 500 ohm.sup.-cm to rapidly and accurately determine conductivity type of the silicon wafer. Advantages of the method of the present application include accurate test results, easy operation, simple device requirement, and reduced cost.

Methods and apparatuses for selective monitoring of multiple silicon compounds in etchant solutions are provided. Methods can include reacting a test solution comprising a plurality of different silicon compounds with a fluoride-based compound in several conditions to provide different silicon:reagent binding ratios. One of the conditions can include the addition of a co-solvent to the test solution. Concentrations of the multiple silicon compounds can be determined based on the different binding ratios of silicon:reagent. Methods can further include a measuring method such as silicon elemental analysis or measuring of functional groups of a certain silicon form of a first portion of a test solution comprising a plurality of different silicon compounds and reacting a second portion of the solution with a fluoride-based compound to provide a silicon:reagent binding ratio. Concentrations of the multiple silicon compounds can be determined based on the measuring method and binding ratio measurements.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

One embodiment provides a method for predicting the performance of a device based upon parameters of an underlying material, comprising: measuring a predetermined parameter of a material to be used in manufacturing the device; identifying, from a value generated from the measuring, a value of a property of the material; and determining a predicted performance of the device by correlating the value of the property to a performance value. Other aspects are described and claimed.

An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

According to one embodiment, a simulation apparatus is disclosed. The simulation apparatus includes a storage device storing data relating to a thermal equivalent circuit of a semiconductor device. The simulation apparatus further includes an estimation device estimating a time-dependent change in thermal characteristics of the semiconductor device by using the data. The thermal equivalent circuit includes a first thermal equivalent circuit corresponding to a lower-surface-side part of the semiconductor device. The thermal equivalent circuit further includes a second thermal equivalent circuit connected to the first thermal equivalent circuit and corresponding to an upper-surface-side part of the semiconductor device.

A method of training a neural network modeling physical phenomena of semiconductor material includes receiving plurality of training pairs corresponding to a semiconductor material. Each training pair comprises an input charge to a distinct voxel of the semiconductor material and one or more output signals generated by the distinct voxel in response to the input charge. A neural network is trained using the training pairs. The neural network models the semiconductor material and each voxel is represented in the neural network by a tensor field defined by (i) a location of the voxel within the semiconductor material and (ii) one or more physics-based phenomena within the voxel at the location.

A collecting device includes a stage configured to place a substrate. A magnetic field generating unit holds, by a magnetic field, a first liquid containing a magnetic fluid and a collecting liquid to bring the first liquid into contact with at least an end portion of the substrate. A collecting unit collects the first liquid from the magnetic field generating unit. A separating unit separates the collecting liquid from the first liquid.

A temperature measuring apparatus for measuring a temperature of a substrate is described. A light emitting source that emits light signals such as laser pulses are applied to the substrate. A detector on the other side of the light emitting source receives the reflected laser pulses. The detector further receives emission signals associated with temperature or energy density that is radiated from the surface of the substrate. The temperature measuring apparatus determines the temperature of the substrate during a thermal process using the received laser pulses and the emission signals. To improve the signal to noise ratio of the reflected laser pulses, a polarizer may be used to polarize the laser pulses to have a S polarization. The angle in which the polarized laser pulses are applied towards the substrate may also be controlled to enhance the signal to noise ratio at the detector's end.