Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

A wafer surface defect inspection method and a wafer surface defect inspection apparatus are provided. The method includes the following steps. Scanning information of a wafer is received, and the scanning information includes multiple scanning parameters. At least one reference point of the scanning information is determined, and path information is generated according to the at least one reference point and a reference value. Multiple first scanning parameters corresponding to the path information in the scanning parameters are obtained according to the path information to generate a curve chart. According to the curve chart, it is determined whether the wafer has a defect, and a defect type of the defect is determined.

A method for predicting the electrical functionality of a semiconductor package, the method includes performing a first stiffness test for a first semiconductor package, receiving failure data for the first semiconductor package, the failure data includes results of an electrical test performed after the first semiconductor package is assembled on a printed circuit board, generating a database comprising results of the first stiffness test as a function of the failure data for the first semiconductor package, performing a second stiffness test for a second semiconductor package, identifying a unique result from the results of the first stiffness test in the database, the unique result aligns with a result of the second stiffness test, and predicting a failure data for the second semiconductor package based on the failure data for the first semiconductor package which corresponds to the unique result of the first stiffness test identified in the database.

A method of quantifying metal impurities on a silicon product, includes obtaining a sample of the silicon product; etching or chemically treating a surface of silicon product to retrieve a predetermined amount of silicon product mass; and testing and measuring the etched portion for the presence of metal impurities using a testing measurement technique selected from ICP-MS, ICP-OES, IC, or a combination comprising at least one for the foregoing, wherein the metal impurities are selected from sodium, magnesium, nickel, copper, zinc, molybdenum, tungsten, aluminum, potassium, calcium, titanium, chromium, manganese, iron, cobalt, or a combination comprising at least one of the foregoing.

Embodiments are generally directed to air bladder based mechanical testing for stretchable electronics. An embodiment of a system includes an inflatable bladder to apply mechanical force to a stretchable electronics device by the inflation and deflation of the inflatable bladder; a valve unit to control fluid pressure applied to the inflatable bladder; and a control unit to control inflation and deflation of the inflatable bladder.

A substrate analysis method using a nozzle for substrate analysis which discharges an analysis liquid from a tip thereof, scans a substrate surface with a discharged analysis liquid, and sucks the analysis liquid. This is done by arranging a liquid catch plate that catches the discharged analysis liquid, thus retaining analysis liquid discharged between the nozzle tip and the liquid catch plate; positioning the substrate so that the end part thereof can be inserted between the nozzle tip and the liquid catch plate; bringing the end part of the substrate into contact with analysis liquid retained between the nozzle tip and liquid catch plate; and moving the nozzle and liquid catch plate concurrently along a periphery of the substrate, while keeping the end part of the substrate in contact with the analysis liquid, to analyze the end part of the substrate.

A measurement system is presented configured for integration with a processing equipment for applying optical measurements to a structure. The measurement system comprises: a support assembly for holding a structure under measurements in a measurement plane, configured and operable for rotation in a plane parallel to the measurement plane and for movement along a first lateral axis in said measurement plane; an optical system defining illumination and collection light channels of normal and oblique optical schemes and comprising an optical head comprising at least three lens units located in the illumination and collection channels; a holder assembly comprising: a support unit for carrying the optical head, and a guiding unit for guiding a sliding movement of the support unit along a path extending along a second lateral axis perpendicular to said first lateral axis; and an optical window arrangement comprising at least three optical windows made in a faceplate located between the optical head at a certain distance from the measurement plane. The optical windows are aligned with the illumination and collection channels for, respectively, propagation of illuminating light from the optical head and propagation of light returned from an illuminated region to the optical head, in accordance with the normal and oblique optical schemes.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.