A method for analyzing an antioxidant content contained in a semiconductive material for a cable, which includes an amine-based antioxidant. The method can provide an accurate quantitative analysis value obtained by a comparison with the actual amount used, through gas chromatography (GC)/a flame ionization detector (FID).

A method of failure analysis for locating open circuit defect in a metal layers, comprising: providing a chip sample having a metal layer, with an open circuit defect; delaminating the chip to expose the metal layer; depositing a metal conductive layer on the metal layer; removing a portion of the metal conductive layer to expose the metal layer; depositing a non-conductive protective layer to cover the exposed metal layer and any remaining portions of the metal conductive layer; preparing a TEM slice sample which comprises the metal layer, the remaining portions of the metal conductive layer, and the non-conductive protective layer; performing a VC analysis on the TEM slice sample to determine the defect position of the open circuit defect; and analyzing the defect position of the open circuit defect.

A system and method of additively manufacturing a part including electrically conductive or static dissipating fluorine-containing polymers. The method includes depositing fluorine-containing polymer additive manufacturing material onto a build platform, selectively cross-linking portions of the deposited additive manufacturing material, and curing the selectively cross-linked portions such that the part is at least one of electrically conductive and static dissipating.

Provided are a wafer defect analysis method and system, a device and a medium. The wafer defect analysis method includes: acquiring batch information and defect information of each wafer in a semiconductor manufacturing process, the defect information including hot spot defect information; setting a hot spot defect feature, and selecting target hot spot defect information associated with the hot spot defect feature from the hot spot defect information; tracking, according to the batch information, a first wafer corresponding to the target hot spot defect information associated with the hot spot defect feature, and determining a defect source.

A method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.

A system and method of additively manufacturing a part including electrically conductive or static dissipating fluorine-containing polymers. The method includes depositing fluorine-containing polymer additive manufacturing material onto a build platform, selectively cross-linking portions of the deposited additive manufacturing material, and curing the selectively cross-linked portions such that the part is at least one of electrically conductive and static dissipating.

The present invention relates to a Thermal Desorption analysis automation system including an automation system and an analysis method using the same to quickly perform a wafer defect analysis process. The Thermal Desorption analysis automation system includes a heating device that includes a heater for heating a wafer, an analysis device that receives gas containing contaminants desorbed from the heated wafer and analyzes the gas, a coupling part that is disposed outside a chamber and coupled to the wafer, a wafer transfer device that is provided with an arm transferring the coupling part, and a control unit that controls the wafer transfer device to insert the wafer into the chamber and transfer the wafer in the chamber to the outside.

A method for measuring damage (D) of a substrate (1) caused by an electron beam (2). The method comprises using an atomic force microscope (AFM) to provide a measurement (S2) of mechanical and/or chemical material properties (P2) of the substrate (1) at an exposure area (1a) of the electron beam (2). The method further comprises calculating a damage parameter (Sd) indicative for the damage (D) based on the measurement (S2) of the material properties (P2) at the exposure area (1a).

Embodiments may include methods, systems, and apparatuses for care area based swath speed for throughput and sensitivity improvement. A method may comprise receiving scan region of a die. The scan region of the die may have a first care area at a controller configured to control an inspection tool, wherein the inspection tool includes a stage having the die disposed thereon. The method may then include scanning a first portion of the scan region at a fast feed rate and the first care area at a slow feed rate. Scanning may include emitting particles in a particle beam toward the die resulting an incidence on the die. Emitting may be performed using a particle emitter. Scanning may then include detecting a portion of particles reflected from the incidence. Detecting may be performed using a detector. Scanning may then include changing a position of the stage relative to the incidence.

Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.